公开(公告)号：US20080121946A1

公开(公告)日：2008-05-29

申请号：US11736658

申请日：2007-04-18

申请人： Doo Hyeb YOUN ,  Sunglyul MAENG ,  Sang Hyeob KIM ,  Jonghyurk PARK ,  Kwang Yong KANG ,  Sang Hoon LEE ,  Chull Won JU

发明人： Doo Hyeb YOUN ,  Sunglyul MAENG ,  Sang Hyeob KIM ,  Jonghyurk PARK ,  Kwang Yong KANG ,  Sang Hoon LEE ,  Chull Won JU

IPC分类号： H01L29/78 ,  H01L21/00

CPC分类号： G01N27/122 ,  G01N27/127

摘要： A method of forming a sensor for detecting gases and biochemical materials that can be fabricated at a temperature in a range from room temperature to 400° C., a metal oxide semiconductor field effect transistor (MOSFET)-based integrated circuit including the sensor, and a method of manufacturing the integrated circuit are provided. The integrated circuit includes a semiconductor substrate. The sensor for detecting gases and biochemical materials includes a pair of electrodes formed on a first region of the semiconductor substrate, and a metal oxide nano structure layer formed on surfaces of the pair electrodes. A heater is formed to perform thermal treatment to re-use the material detected in the metal oxide nano structure layer. Also, a signal processor is formed by a MOSFET to process a predetermined signal obtained from a quantity change of a current flowing through the pair of electrodes of the sensor. To form the sensor, the metal oxide nano structure layer is formed on surfaces of the pair of electrodes at a temperature in a range from room temperature to 400° C.

摘要翻译： 一种形成用于检测可在室温至400℃的温度范围内制造的气体和生物化学材料的传感器的方法，基于金属氧化物半导体场效应晶体管（MOSFET）的集成电路，包括该传感器，以及 提供了一种制造集成电路的方法。 集成电路包括半导体衬底。 用于检测气体和生化材料的传感器包括形成在半导体衬底的第一区域上的一对电极和形成在该对电极的表面上的金属氧化物纳米结构层。 形成加热器以进行热处理以重新使用在金属氧化物纳米结构层中检测的材料。 此外，信号处理器由MOSFET形成以处理从流过传感器的一对电极的电流的量变化获得的预定信号。 为了形成传感器，金属氧化物纳米结构层在室温至400℃的温度范围内形成在该对电极的表面上。