公开(公告)号：US20080121946A1

公开(公告)日：2008-05-29

申请号：US11736658

申请日：2007-04-18

申请人： Doo Hyeb YOUN ,  Sunglyul MAENG ,  Sang Hyeob KIM ,  Jonghyurk PARK ,  Kwang Yong KANG ,  Sang Hoon LEE ,  Chull Won JU

发明人： Doo Hyeb YOUN ,  Sunglyul MAENG ,  Sang Hyeob KIM ,  Jonghyurk PARK ,  Kwang Yong KANG ,  Sang Hoon LEE ,  Chull Won JU

IPC分类号： H01L29/78 ,  H01L21/00

CPC分类号： G01N27/122 ,  G01N27/127

摘要： A method of forming a sensor for detecting gases and biochemical materials that can be fabricated at a temperature in a range from room temperature to 400° C., a metal oxide semiconductor field effect transistor (MOSFET)-based integrated circuit including the sensor, and a method of manufacturing the integrated circuit are provided. The integrated circuit includes a semiconductor substrate. The sensor for detecting gases and biochemical materials includes a pair of electrodes formed on a first region of the semiconductor substrate, and a metal oxide nano structure layer formed on surfaces of the pair electrodes. A heater is formed to perform thermal treatment to re-use the material detected in the metal oxide nano structure layer. Also, a signal processor is formed by a MOSFET to process a predetermined signal obtained from a quantity change of a current flowing through the pair of electrodes of the sensor. To form the sensor, the metal oxide nano structure layer is formed on surfaces of the pair of electrodes at a temperature in a range from room temperature to 400° C.

摘要翻译： 一种形成用于检测可在室温至400℃的温度范围内制造的气体和生物化学材料的传感器的方法，基于金属氧化物半导体场效应晶体管（MOSFET）的集成电路，包括该传感器，以及 提供了一种制造集成电路的方法。 集成电路包括半导体衬底。 用于检测气体和生化材料的传感器包括形成在半导体衬底的第一区域上的一对电极和形成在该对电极的表面上的金属氧化物纳米结构层。 形成加热器以进行热处理以重新使用在金属氧化物纳米结构层中检测的材料。 此外，信号处理器由MOSFET形成以处理从流过传感器的一对电极的电流的量变化获得的预定信号。 为了形成传感器，金属氧化物纳米结构层在室温至400℃的温度范围内形成在该对电极的表面上。

公开(公告)号：US20100155605A1

公开(公告)日：2010-06-24

申请号：US12537445

申请日：2009-08-07

申请人： Sang Kuk CHOI ,  Kwang Yong KANG ,  Mun Cheol Paek ,  Min Hwan KWAK ,  Seung Beom KANG

发明人： Sang Kuk CHOI ,  Kwang Yong KANG ,  Mun Cheol Paek ,  Min Hwan KWAK ,  Seung Beom KANG

IPC分类号： G01J5/02

CPC分类号： G01J3/108 ,  G01J3/02 ,  G01J3/0208 ,  Y10T29/49826

摘要： Provided are a terahertz wave transmission and reception (Tx/Rx) module package and method of manufacturing the same. The complete and separate terahertz wave Tx/Rx module package is implemented by simply aligning a silicon ball lens, a photoconductive antenna and a focusing lens, and thus facilitates generation or measurement of a terahertz wave. The terahertz wave Tx/Rx module package and method can remarkably reduce time and cost required to build a terahertz wave generation and measurement system, and simplify and miniaturize the terahertz wave generation and measurement system. In addition, characteristics of a terahertz wave generated by the photoconductive antenna can be simply measured. Furthermore, the terahertz wave Tx/Rx module package can be stored and transported with a photoconductive antenna, a silicon ball lens and a focusing lens kept aligned as they are, and also it is possible to minimize pollution of terahertz wave devices caused by surroundings.

摘要翻译： 提供了一种太赫兹波发送和接收（Tx / Rx）模块封装及其制造方法。 通过简单地对准硅球透镜，光电导天线和聚焦透镜来实现完整和单独的太赫兹波Tx / Rx模块封装，从而有助于太赫兹波的产生或测量。 太赫兹波Tx / Rx模块封装和方法可以显着降低构建太赫兹波生成和测量系统所需的时间和成本，并简化和小型化太赫兹波生成和测量系统。 此外，可以简单地测量由光电导天线产生的太赫兹波的特性。 此外，太赫兹波Tx / Rx模块封装可以用光电导天线，硅球透镜和聚焦透镜保持原样保持并传输，并且还可以最小化由周围环境引起的太赫兹波器件的污染。

公开(公告)号：US20080142900A1

公开(公告)日：2008-06-19

申请号：US12021764

申请日：2008-01-29

申请人： Hyun Tak KIM ,  Kwang Yong KANG ,  Bong Jun KIM ,  Yong Wook LEE ,  Sun Jin YUN ,  Byung Gyu CHAE ,  Gyung Ock KIM

发明人： Hyun Tak KIM ,  Kwang Yong KANG ,  Bong Jun KIM ,  Yong Wook LEE ,  Sun Jin YUN ,  Byung Gyu CHAE ,  Gyung Ock KIM

IPC分类号： H01L29/76

CPC分类号： H01L49/003

摘要： Provided are an abrupt metal-insulator transition (MIT) device for bypassing super-high voltage noise to protect an electric and/or electronic system, such as, a high-voltage switch, from a super-high voltage, a high-voltage noise removing circuit for bypassing the super-high voltage noise using the abrupt MIT device, and an electric and/or electronic system including the high-voltage noise removing circuit. The abrupt MIT device includes a substrate, a first abrupt MIT structure, and a second abrupt MIT structure. The first and second abrupt MIT structures are formed on an upper surface and a lower surface, respectively, of the substrate. The high-voltage noise removing circuit includes an abrupt MIT device chain connected in parallel to the electric and/or electronic system to be protected. The abrupt MIT device chain includes at least two abrupt MIT devices serially connected to each other.

摘要翻译： 提供了用于绕过超高压噪声以保护诸如高压开关的电和/或电子系统的突发金属 - 绝缘体转变（MIT）装置，从超高电压，高压噪声 使用突发MIT装置绕过超高压噪声的除电路，以及包括高压噪声去除电路的电气和/或电子系统。 突变MIT装置包括基板，第一突发MIT结构和第二突发MIT结构。 第一和第二突变MIT结构分别形成在基板的上表面和下表面上。 高电压噪声去除电路包括与要保护的电和/或电子系统并联连接的突变MIT装置链。 突发MIT设备链包括彼此串行连接的至少两个突发MIT设备。