公开(公告)号：US20080121946A1

公开(公告)日：2008-05-29

申请号：US11736658

申请日：2007-04-18

申请人： Doo Hyeb YOUN ,  Sunglyul MAENG ,  Sang Hyeob KIM ,  Jonghyurk PARK ,  Kwang Yong KANG ,  Sang Hoon LEE ,  Chull Won JU

发明人： Doo Hyeb YOUN ,  Sunglyul MAENG ,  Sang Hyeob KIM ,  Jonghyurk PARK ,  Kwang Yong KANG ,  Sang Hoon LEE ,  Chull Won JU

IPC分类号： H01L29/78 ,  H01L21/00

CPC分类号： G01N27/122 ,  G01N27/127

摘要： A method of forming a sensor for detecting gases and biochemical materials that can be fabricated at a temperature in a range from room temperature to 400° C., a metal oxide semiconductor field effect transistor (MOSFET)-based integrated circuit including the sensor, and a method of manufacturing the integrated circuit are provided. The integrated circuit includes a semiconductor substrate. The sensor for detecting gases and biochemical materials includes a pair of electrodes formed on a first region of the semiconductor substrate, and a metal oxide nano structure layer formed on surfaces of the pair electrodes. A heater is formed to perform thermal treatment to re-use the material detected in the metal oxide nano structure layer. Also, a signal processor is formed by a MOSFET to process a predetermined signal obtained from a quantity change of a current flowing through the pair of electrodes of the sensor. To form the sensor, the metal oxide nano structure layer is formed on surfaces of the pair of electrodes at a temperature in a range from room temperature to 400° C.

摘要翻译： 一种形成用于检测可在室温至400℃的温度范围内制造的气体和生物化学材料的传感器的方法，基于金属氧化物半导体场效应晶体管（MOSFET）的集成电路，包括该传感器，以及 提供了一种制造集成电路的方法。 集成电路包括半导体衬底。 用于检测气体和生化材料的传感器包括形成在半导体衬底的第一区域上的一对电极和形成在该对电极的表面上的金属氧化物纳米结构层。 形成加热器以进行热处理以重新使用在金属氧化物纳米结构层中检测的材料。 此外，信号处理器由MOSFET形成以处理从流过传感器的一对电极的电流的量变化获得的预定信号。 为了形成传感器，金属氧化物纳米结构层在室温至400℃的温度范围内形成在该对电极的表面上。

公开(公告)号：US20100134208A1

公开(公告)日：2010-06-03

申请号：US12495579

申请日：2009-06-30

申请人： Chull Won JU ,  Jonghyurk Park ,  Yong Il Jun ,  Hee-Bum Jung

发明人： Chull Won JU ,  Jonghyurk Park ,  Yong Il Jun ,  Hee-Bum Jung

IPC分类号： H03H9/02

CPC分类号： H03H9/02417 ,  Y10S977/732 ,  Y10S977/742 ,  Y10S977/932 ,  Y10S977/949

摘要： An RF device is provided. The RF device includes a vibratile carbon nanotube having a nanotube natural frequency (f0), a negative electrode fixed to a first end of the carbon nanotube, a vibratile tuning electrode having a variable resonance frequency and facing a second end of the carbon nanotube, and a positive electrode electrically connected to a first end of the tuning electrode. A second end of the tuning electrode is adjacent to the second end of the carbon nanotube, and the carbon nanotube vibrates at a carrier frequency according to an external electromagnetic wave having the carrier frequency, and the tuning electrode having variable resonance frequency characteristics amplifies distance variation between the second end of the carbon nanotube and the second end of the tuning electrode to increase an electron emission sensitivity according to field emission.

摘要翻译： 提供RF设备。 RF装置包括具有纳米管固有频率（f0）的振动性碳纳米管，固定在碳纳米管的第一端的负极，具有可变谐振频率且面向碳纳米管的第二端的振动调谐电极，以及 电极连接到调谐电极的第一端的正电极。 调谐电极的第二端与碳纳米管的第二端相邻，并且碳纳米管根据具有载波频率的外部电磁波以载波频率振动，并且具有可变谐振频率特性的调谐电极放大距离变化 在碳纳米管的第二端和调谐电极的第二端之间，以根据场发射增加电子发射灵敏度。

公开(公告)号：US20130020649A1

公开(公告)日：2013-01-24

申请号：US13548522

申请日：2012-07-13

申请人： Sung Bum BAE ,  Eun Soo NAM ,  Jae Kyoung MUN ,  Sung Bock KIM ,  Hae Cheon KIM ,  Chull Won JU ,  Sang Choon KO ,  Jong-Won LIM ,  Ho Kyun AHN ,  Woo Jin CHANG ,  Young Rak PARK

发明人： Sung Bum BAE ,  Eun Soo NAM ,  Jae Kyoung MUN ,  Sung Bock KIM ,  Hae Cheon KIM ,  Chull Won JU ,  Sang Choon KO ,  Jong-Won LIM ,  Ho Kyun AHN ,  Woo Jin CHANG ,  Young Rak PARK

IPC分类号： H01L27/088 ,  H01L21/20 ,  H01L27/08

CPC分类号： H01L29/66446 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02647 ,  H01L21/8252 ,  H01L27/0605 ,  H01L27/0883

摘要： The present disclosure relates to a nitride electronic device and a method for manufacturing the same, and particularly, to a nitride electronic device and a method for manufacturing the same that can implement various types of nitride integrated structures on the same substrate through a regrowth technology (epitaxially lateral over-growth: ELOG) of a semi-insulating gallium nitride (GaN) layer used in a III-nitride semiconductor electronic device including Group III elements such as gallium (Ga), aluminum (Al) and indium (In) and nitrogen.

摘要翻译： 本发明涉及一种氮化物电子器件及其制造方法，特别涉及一种氮化物电子器件及其制造方法，该氮化物电子器件及其制造方法可以通过再生技术在同一衬底上实现各种氮化物一体化结构（ 用于包括III族元素如镓（Ga），铝（Al）和铟（In））和氮（III）的III族氮化物半导体电子器件中的半绝缘氮化镓（GaN）层的外延横向过度生长：ELOG） 。

公开(公告)号：US20130069173A1

公开(公告)日：2013-03-21

申请号：US13592560

申请日：2012-08-23

申请人： Woo Jin CHANG ,  Jong Won LIM ,  Ho Kyun AHN ,  Sang Choon KO ,  Sung Bum BAE ,  Chull Won JU ,  Young Rak PARK ,  Jae Kyoung MUN ,  Eun Soo NAM

发明人： Woo Jin CHANG ,  Jong Won LIM ,  Ho Kyun AHN ,  Sang Choon KO ,  Sung Bum BAE ,  Chull Won JU ,  Young Rak PARK ,  Jae Kyoung MUN ,  Eun Soo NAM

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/66901 ,  H01L29/2003 ,  H01L29/401 ,  H01L29/402 ,  H01L29/42316 ,  H01L29/66462 ,  H01L29/7786

摘要： Disclosed are a power semiconductor device and a method of fabricating the same which can increase a breakdown voltage of the device through a field plate formed between a gate electrode and a drain electrode and achieve an easier manufacturing process at the same time. The power semiconductor device according to an exemplary embodiment of the present disclosure includes a source electrode and a drain electrode formed on a substrate; a dielectric layer formed between the source electrode and the drain electrode to have a lower height than heights of the two electrodes and including an etched part exposing the substrate; a gate electrode formed on the etched part; a field plate formed on the dielectric layer between the gate electrode and the drain electrode;and a metal configured to connect the field plate and the source electrode.

摘要翻译： 公开了功率半导体器件及其制造方法，其可以通过形成在栅电极和漏电极之间的场板来增加器件的击穿电压，并且同时实现更容易的制造工艺。 根据本公开的示例性实施例的功率半导体器件包括形成在衬底上的源电极和漏电极; 形成在所述源电极和所述漏电极之间的电介质层具有比所述两个电极的高度低的高度，并且包括暴露所述衬底的蚀刻部分; 形成在蚀刻部分上的栅电极; 形成在栅电极和漏电极之间的电介质层上的场板; 以及配置成连接场板和源电极的金属。