公开(公告)号：US20220028621A1

公开(公告)日：2022-01-27

申请号：US17293558

申请日：2019-11-13

Applicant: Drexel University

Inventor： Iryna S. GOLOVINA ,  Aleksandr V. PLOKHIKH ,  Jonathan E. SPANIER ,  Mattias FALMBIGL

IPC: H01G7/04 ,  H01G4/10

Abstract: Provided is the dielectric response of atomic layer-deposited and annealed polymorphic BaTiO3 and BaTiO3—AlO3 bi-layer thin films based on nanocrystalline BaTiO3 containing the perovskite and hexagonal polymorphs. Also provided are BaTiCb films having tuned Curie temperatures. Also provide are nano-grained films, comprising: a BaTiO3 film component comprising a Ba/Ti ratio of between about 0.8 and 1.06, a transition temperature of the nano-grained film being dependent on the Ba/Ti ratio, and the nano-grained film exhibiting a diffused phase transition, optionally whereby a temperature density of a dielectric constant of the nano-grained film is minimized.