公开(公告)号：US20200240000A1

公开(公告)日：2020-07-30

申请号：US16756337

申请日：2018-10-09

Applicant: Drexel University

Inventor： Zongquan GU ,  Babak ANASORI ,  Andrew Lewis BENNETT-JACKSON ,  Matthias FALMBIGL ,  Dominic IMBRENDA ,  Yury GOGOTSI ,  Jonathan E. SPANIER

IPC: C23C14/08 ,  C23C16/40 ,  C23C14/58 ,  C23C16/455 ,  C23C16/56 ,  H01L49/02 ,  C23C16/32 ,  C23C14/06 ,  C23C16/02 ,  C23C14/02

Abstract: The present disclosure is directed to using MXene compositions as templates for the deposition of oriented perovskite films, and compositions derived from such methods. Certain specific embodiments include methods preparing an oriented perovskite, perovskite-type, or perovskite-like film, the methods comprising: (a) depositing at least one perovskite, perovskite-type, or perovskite-like composition or precursor composition using chemical vapor deposition (CVD), physical vapor deposition (PVD), or atomic layer deposition (ALD) onto a film or layer of a MXene composition supported on a substrate to form a layered composition or precursor composition; and either (b) (1) heat treating or annealing the layered precursor composition to form a layered perovskite-type structure comprising at least one oriented perovskite, perovskite-type, or perovskite-like composition; or (2) annealing the layered composition; or (3) both (1) and (2).

公开(公告)号：US20220028621A1

公开(公告)日：2022-01-27

申请号：US17293558

申请日：2019-11-13

Applicant: Drexel University

Inventor： Iryna S. GOLOVINA ,  Aleksandr V. PLOKHIKH ,  Jonathan E. SPANIER ,  Mattias FALMBIGL

IPC: H01G7/04 ,  H01G4/10

Abstract: Provided is the dielectric response of atomic layer-deposited and annealed polymorphic BaTiO3 and BaTiO3—AlO3 bi-layer thin films based on nanocrystalline BaTiO3 containing the perovskite and hexagonal polymorphs. Also provided are BaTiCb films having tuned Curie temperatures. Also provide are nano-grained films, comprising: a BaTiO3 film component comprising a Ba/Ti ratio of between about 0.8 and 1.06, a transition temperature of the nano-grained film being dependent on the Ba/Ti ratio, and the nano-grained film exhibiting a diffused phase transition, optionally whereby a temperature density of a dielectric constant of the nano-grained film is minimized.

公开(公告)号：US20240312711A1

公开(公告)日：2024-09-19

申请号：US18547015

申请日：2022-02-18

Applicant: DREXEL UNIVERSITY ,  BAR-ILAN UNIVERSITY

Inventor： Matthias FALMBIGL ,  Iryna S. GOLOVINA ,  Christopher J. HAWLEY ,  Aleksandr V. PLOKHIKH ,  Or SHAFIR ,  Ilya GRINBERG ,  Jonathan E. SPANIER

IPC: H01G4/12 ,  H01G4/33 ,  H01G7/06

CPC classification number: H01G4/1227 ,  H01G4/33 ,  H01G7/06

Abstract: Disclosed herein are thin films and methods of forming thin films. An example thin film may comprise Ba—Ti—O configured to exhibit a structure where a distance of one or more neighboring Ti—Ti atoms is less than 3 Å.

公开(公告)号：US20220246714A1

公开(公告)日：2022-08-04

申请号：US17607726

申请日：2020-04-29

Applicant: Drexel University ,  THE PENN STATE RESEARCH FOUNDATION

Inventor： Jonathan E. SPANIER ,  Aleksandr V. PLOKHIKH ,  Matthias FALMBIGL ,  Roman ENGEL-HERBERT ,  Jason LAPANO ,  Iryna S. GOLOVINA

IPC: H01L49/02 ,  H01L21/02

Abstract: The present disclosure provides a layering structure that permits integration of epitaxially oriented perovskite oxides, such as bismuth ferrite (BiFeO3), epitaxially oriented barium titanate (BaTiO3), epitaxially oriented (SrTiO3), or their superstructures (BTO/STO) or solid solutions, onto a Si substrate through a perovskite buffer layer. The structure can retain thermal process-sensitive dopant positions and other thermal process window-sensitive features through atomic layer deposition of an oxide perovskite. Also provided are methods of preparing these layered structures.

公开(公告)号：US20170102332A1

公开(公告)日：2017-04-13

申请号：US15128149

申请日：2015-03-23

Applicant: Drexel University ,  The Trustees Of The University of Pennsylvania

Inventor： Jonathan E. SPANIER ,  Zongquan GU ,  Mohammad A. ISLAM ,  Diomedes SALDANA-GRECO ,  Andrew Marshall RAPPE

IPC: G01N21/64 ,  G01N21/76

CPC classification number: G01N21/6489

Abstract: The present disclosure pertains to the use of intense, narrow-linewidth surface, chemically-switchable ultraviolet photoluminescence from radiative recombination of the two-dimensional electron liquid with photo-excited holes in complex oxide heterostructures, such as LaAlO3/SrTiO3 (LAO/STO). Such photoluminescence from the interface between the upper and lower layers can be suppressed and restored reversibly under oxidizing and reducing conditions, respectively, as induced by chemisorption and reversal of chemisorption on the exposed surface of the heterostructure's upper member. Making use of this chemically-switchable ultraviolet photoluminescence, the present disclosure provides, inter alia, systems for detection of a chemical species, methods for determining the absence or presence of a chemical species in a sample, optoelectronic devices, and methods for producing optoelectronic devices.

公开(公告)号：US20160068990A1

公开(公告)日：2016-03-10

申请号：US14784598

申请日：2014-04-07

Applicant: DREXEL UNIVERSITY

Inventor： Jonathan E. SPANIER ,  Andrei AKBASHEU

IPC: C30B1/02 ,  C23C16/56 ,  C30B29/30 ,  C30B1/04 ,  C30B29/24 ,  C30B29/32 ,  C23C16/455 ,  C23C16/40

CPC classification number: C30B1/023 ,  C23C16/40 ,  C23C16/409 ,  C23C16/45553 ,  C23C16/45555 ,  C23C16/56 ,  C30B1/026 ,  C30B1/04 ,  C30B29/24 ,  C30B29/30 ,  C30B29/32

Abstract: This disclosure provides methods for forming a perovskite film. Exemplary methods can include the steps of forming an amorphous layer on a substrate disposed in a reaction chamber, covering at least a portion of the amorphous layer with a barrier that at least partially prevents the first metal, the second metal, oxygen atoms, or a combination thereof from being released during annealing and annealing the amorphous layer to form a perovskite film. Formation of the amorphous layer on the substrate disposed in a reaction chamber may be effected by introducing a first compound comprising a first metal; introducing an oxidizing agent; and introducing a second compound comprising a second metal.

Abstract translation: 本公开提供了形成钙钛矿膜的方法。 示例性方法可以包括以下步骤：在设置在反应室中的基底上形成非晶层，用至少部分地防止第一金属，第二金属，氧原子或至少一部分的屏障覆盖非晶层的至少一部分 其组合在退火和退火期间被释放，以形成非晶层以形成钙钛矿膜。 在设置在反应室中的基板上形成非晶层可以通过引入包含第一金属的第一化合物来实现; 引入氧化剂; 并引入包含第二金属的第二化合物。