公开(公告)号：US20220028621A1

公开(公告)日：2022-01-27

申请号：US17293558

申请日：2019-11-13

Applicant: Drexel University

Inventor： Iryna S. GOLOVINA ,  Aleksandr V. PLOKHIKH ,  Jonathan E. SPANIER ,  Mattias FALMBIGL

IPC: H01G7/04 ,  H01G4/10

Abstract: Provided is the dielectric response of atomic layer-deposited and annealed polymorphic BaTiO3 and BaTiO3—AlO3 bi-layer thin films based on nanocrystalline BaTiO3 containing the perovskite and hexagonal polymorphs. Also provided are BaTiCb films having tuned Curie temperatures. Also provide are nano-grained films, comprising: a BaTiO3 film component comprising a Ba/Ti ratio of between about 0.8 and 1.06, a transition temperature of the nano-grained film being dependent on the Ba/Ti ratio, and the nano-grained film exhibiting a diffused phase transition, optionally whereby a temperature density of a dielectric constant of the nano-grained film is minimized.

公开(公告)号：US20240312711A1

公开(公告)日：2024-09-19

申请号：US18547015

申请日：2022-02-18

Applicant: DREXEL UNIVERSITY ,  BAR-ILAN UNIVERSITY

Inventor： Matthias FALMBIGL ,  Iryna S. GOLOVINA ,  Christopher J. HAWLEY ,  Aleksandr V. PLOKHIKH ,  Or SHAFIR ,  Ilya GRINBERG ,  Jonathan E. SPANIER

IPC: H01G4/12 ,  H01G4/33 ,  H01G7/06

CPC classification number: H01G4/1227 ,  H01G4/33 ,  H01G7/06

Abstract: Disclosed herein are thin films and methods of forming thin films. An example thin film may comprise Ba—Ti—O configured to exhibit a structure where a distance of one or more neighboring Ti—Ti atoms is less than 3 Å.

公开(公告)号：US20220246714A1

公开(公告)日：2022-08-04

申请号：US17607726

申请日：2020-04-29

Applicant: Drexel University ,  THE PENN STATE RESEARCH FOUNDATION

Inventor： Jonathan E. SPANIER ,  Aleksandr V. PLOKHIKH ,  Matthias FALMBIGL ,  Roman ENGEL-HERBERT ,  Jason LAPANO ,  Iryna S. GOLOVINA

IPC: H01L49/02 ,  H01L21/02

Abstract: The present disclosure provides a layering structure that permits integration of epitaxially oriented perovskite oxides, such as bismuth ferrite (BiFeO3), epitaxially oriented barium titanate (BaTiO3), epitaxially oriented (SrTiO3), or their superstructures (BTO/STO) or solid solutions, onto a Si substrate through a perovskite buffer layer. The structure can retain thermal process-sensitive dopant positions and other thermal process window-sensitive features through atomic layer deposition of an oxide perovskite. Also provided are methods of preparing these layered structures.