公开(公告)号：US20060138355A1

公开(公告)日：2006-06-29

申请号：US11025474

申请日：2004-12-29

申请人： Duofeng Yue ,  Jeffrey Loewecke ,  JieJie Xu ,  Thomas Conroy

发明人： Duofeng Yue ,  Jeffrey Loewecke ,  JieJie Xu ,  Thomas Conroy

IPC分类号： H01J37/304

CPC分类号： H01L21/26513 ,  H01L22/14 ,  H01L22/20

摘要： Methods (300, 400) are described for calibrating the implantation angle of an ion implanter utilized in the manufacture of semiconductor products. One method (300) includes implanting (330) phosphorous ions into a pilot wafer held by a wafer platen held at a starting implantation angle in the ion implanter. The phosphorous implantation into a p-doped substrate of the pilot or blank wafer, for example, forms a semiconductive sheet. The method (300) then includes changing the implantation angle (340), and implanting another wafer (330) with phosphorous ions. The angle changing (340) and implanting (330) of other wafers continues in this manner until all wafers or angles are implanted (350) as desired. The phosphorous implanted wafers are then measured (360) with a four-point probe, for example, to obtain the sheet resistance of all the implanted wafers. The difference between the sheet resistances of the wafers at each corresponding implant angle is then obtained (370) to determine a functional relationship between the sheet resistance and the implantation angle. Finally, the functional relationship is then used to calibrate (380) the implantation angle of the implanter. For example, the lowest sheet resistance of the functional relationship may be determined, the relationship normalized to the lowest sheet resistance, then a zero degree implantation angle of the implanter is calibrated to to coincide with the lowest sheet resistance measurement.

摘要翻译： 描述了用于校准在制造半导体产品中使用的离子注入机的注入角度的方法（300,400）。 一种方法（300）包括将磷离子注入到由离子注入机中以起始注入角度保持的晶片压板保持的导向晶片中。 例如，导入或空白晶片的p掺杂衬底中的磷注入形成半导体片。 然后，方法（300）包括改变注入角度（340），以及用磷离子注入另一个晶片（330）。 其他晶片的角度变化（340）和植入（330）以这种方式继续，直到根据需要植入所有晶片或角度（350）。 然后用四点探针测量磷植入的晶片（360），以获得所有植入的晶片的薄层电阻。 然后获得晶片在每个对应植入角度的薄层电阻之间的差异（370），以确定薄层电阻和注入角度之间的函数关系。 最后，功能关系用于校准（380）植入器的植入角度。 例如，可以确定功能关系的最低薄层电阻，将其与最低薄层电阻标准化的关系，然后将注入机的零度注入角度校准为与最低薄层电阻测量一致。

公开(公告)号：US07397046B2

公开(公告)日：2008-07-08

申请号：US11025474

申请日：2004-12-29

申请人： Duofeng Yue ,  Jeffrey Loewecke ,  JieJie Xu ,  Thomas Patrick Conroy

发明人： Duofeng Yue ,  Jeffrey Loewecke ,  JieJie Xu ,  Thomas Patrick Conroy

IPC分类号： G21K5/10 ,  H01J37/08 ,  A61N5/00

CPC分类号： H01L21/26513 ,  H01L22/14 ,  H01L22/20

摘要： Methods (300, 400) are described for calibrating the implantation angle of an ion implanter utilized in the manufacture of semiconductor products. One method (300) includes implanting (330) phosphorous ions into a pilot wafer held by a wafer platen held at a starting implantation angle in the ion implanter. The phosphorous implantation into a p-doped substrate of the pilot or blank wafer, for example, forms a semiconductive sheet. The method (300) then includes changing the implantation angle (340), and implanting another wafer (330) with phosphorous ions. The angle changing (340) and implanting (330) of other wafers continues in this manner until all wafers or angles are implanted (350) as desired. The phosphorous implanted wafers are then measured (360) with a four-point probe, for example, to obtain the sheet resistance of all the implanted wafers. The difference between the sheet resistances of the wafers at each corresponding implant angle is then obtained (370) to determine a functional relationship between the sheet resistance and the implantation angle. Finally, the functional relationship is then used to calibrate (380) the implantation angle of the implanter. For example, the lowest sheet resistance of the functional relationship may be determined, the relationship normalized to the lowest sheet resistance, then a zero degree implantation angle of the implanter is calibrated to to coincide with the lowest sheet resistance measurement.

摘要翻译： 描述了用于校准在制造半导体产品中使用的离子注入机的注入角度的方法（300,400）。 一种方法（300）包括将磷离子注入到由离子注入机中以起始注入角度保持的晶片压板保持的导向晶片中。 例如，导入或空白晶片的p掺杂衬底中的磷注入形成半导体片。 然后，方法（300）包括改变注入角度（340），以及用磷离子注入另一个晶片（330）。 其他晶片的角度变化（340）和植入（330）以这种方式继续，直到根据需要植入所有晶片或角度（350）。 然后用四点探针测量磷植入的晶片（360），以获得所有植入的晶片的薄层电阻。 然后获得晶片在每个对应植入角度的薄层电阻之间的差异（370），以确定薄层电阻和注入角度之间的函数关系。 最后，功能关系用于校准（380）植入器的植入角度。 例如，可以确定功能关系的最低薄层电阻，将其与最低薄层电阻标准化的关系，然后将注入机的零度注入角度校准为与最低薄层电阻测量一致。