公开(公告)号：US20010017258A1

公开(公告)日：2001-08-30

申请号：US09791840

申请日：2001-02-26

Applicant: ELECTROPLATING ENGINEERS OF JAPAN LIMITED

Inventor： Hirofumi Ishida ,  Yoshiyuki Harima

IPC: C25D017/06 ,  C25D017/00

CPC classification number: C25D17/001 ,  C25D17/06 ,  H01L21/288

Abstract: The present invention provides a technique for removing air remaining on the peripheral edge of a surface to be plated in a conventional wafer plating apparatus, and to provide a wafer plating apparatus capable of performing a more uniform plating up to the peripheral edge of the surface to be plated, and which is further capable of performing plating even with respect to a wafer coated with a seed metal. This wafer plating apparatus includes a wafer clamp 6 for holding a wafer 4, a wafer support member 7 for supporting the peripheral edge of the surface 5 to be plated, and a plating tank 2 which circulates a plating solution while making the plating solution overflow from an upper opening of the tank. The wafer plating apparatus is arranged so as to perform plating, while the surface 5 to be plated is laid face down, being in contact with the surface of the plating solution, in a state in which the wafer 4 is clamped by the wafer clamp 6 and the wafer support member 7. In this wafer plating apparatus, the wafer support member 7 is equipped with air-vent grooves 12 for discharging the air which remains on the peripheral edge of the surface to be plated 5 while the surface of the plating solution and the wafer 4 make contact, the air-vent grooves 12 being formed at the lower end of the wafer support portion 10.

Abstract translation: 本发明提供了一种用于去除传统晶片电镀装置中待镀表面的周缘残留的空气的技术，并且提供了能够对表面的周边进行更均匀的电镀的晶片电镀装置， 并且即使对于涂覆有种子金属的晶片也能进行电镀。 该晶片电镀装置包括用于保持晶片4的晶片夹6，用于支撑待镀表面5的周缘的晶片支撑构件7，以及在使电镀液从 坦克的上部开口。 晶片电镀装置被布置成在晶片4被晶片夹具6夹紧的状态下进行电镀，同时将待镀表面5面向下放置在与电镀液表面接触的状态 在该晶片电镀装置中，晶片支撑部件7配备有排气槽12，用于排出剩余在被镀表面5的周缘上的空气，同时电镀液的表面 并且晶片4接触，排气槽12形成在晶片支撑部分10的下端。

公开(公告)号：US20010017105A1

公开(公告)日：2001-08-30

申请号：US09791841

申请日：2001-02-26

Applicant: ELECTROPLATING ENGINEERS OF JAPAN LIMITED

Inventor： Hirofumi Ishida ,  Yoshiyuki Harima

IPC: B05C003/00

CPC classification number: C25D17/001 ,  B05C3/18

Abstract: The present invention provides a technique for removing air remaining on the peripheral edge of a surface to be plated in a conventional wafer plating apparatus, and to provide a wafer plating apparatus capable of performing a more uniform plating up to the peripheral edge of the surface to be plated, and which is further capable of performing plating even with respect to a wafer coated with a seed metal. This wafer plating apparatus includes a wafer clamp 6 for holding a wafer 4, a wafer support member 7 for supporting the periphery of the surface 5 to be plated of the wafer 4, and a plating tank 2 for circulating a plating solution while making the plating solution overflow from an upper opening of the tank. The wafer plating apparatus is arranged so as to perform plating, while the surface 5 to be plated is laid face down, being in contact with the surface of the plating solution, in a state in which the wafer 4 is clamped by the wafer clamp 6 and the wafer support member 7. In this wafer plating apparatus, the wafer support member 7 is equipped with air-vent holes 12 for discharging air remaining on the peripheral edge of the surface 5 to be plated while the surface of the plating solution and the wafer 4 are made contact with each other.

Abstract translation: 本发明提供了一种用于去除传统晶片电镀装置中待镀表面的周缘残留的空气的技术，并且提供了能够对表面的周边进行更均匀的电镀的晶片电镀装置， 并且即使对于涂覆有种子金属的晶片也能进行电镀。 该晶片电镀装置包括用于保持晶片4的晶片夹具6，用于支撑晶片4的待镀表面5的周边的晶片支撑部件7以及用于使电镀液循环的镀槽2 溶液从罐的上部开口溢出。 晶片电镀装置被布置成在晶片4被晶片夹具6夹紧的状态下进行电镀，同时将待镀表面5面向下放置在与电镀液表面接触的状态 在该晶片电镀装置中，晶片支撑部件7配备有排气孔12，用于排出剩余在被镀表面5的周缘上的空气，同时电镀液的表面和 晶片4彼此接触。