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公开(公告)号：US20220145470A1
公开(公告)日：2022-05-12
申请号：US17433123
申请日：2020-03-26
发明人： Masahiro ITO , Shigeki YAMANAKA
摘要： A nanostructure substrate includes groups of composite particles in which a reduced and deposited coating layer shows cohesive polarization action and/or electromagnetic polarization action. Also, to provide a nanostructure substrate, such active sites are dramatically increased to allow a medium to react homogenously over the entire nanostructure substrate. On a transparent semi-curable polyester resin film, groups of gold fine particles (average particle diameter: 20 nm) are reduced and deposited from an aqueous solution and self-aggregated. A half of the lower part of the groups of gold fine particles is submerged in the polyester resin film, and embedded in the front surface side of the transparent resin base body. Then, this transparent substrate is immersed in an electroless gold-plating solution repeatedly to deposit gold crystal grains on the fixed groups of gold fine particles.
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公开(公告)号：US20150137356A1
公开(公告)日：2015-05-21
申请号：US14411904
申请日：2013-09-19
发明人： Junko Tsuyuki , Masahiro Ito
CPC分类号： C25D3/48 , C25D3/62 , C25D5/022 , C25D5/50 , C25D7/12 , C25D7/123 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/43 , H01L24/45 , H01L24/94 , H01L2224/0345 , H01L2224/03462 , H01L2224/03848 , H01L2224/0401 , H01L2224/05644 , H01L2224/11462 , H01L2224/11848 , H01L2224/13144 , H01L2224/45144 , H01L2224/94 , H01L2924/00014 , H01L2924/01079 , H01L2924/01077 , H01L2924/01044 , H01L2924/01045 , H01L2924/01081 , H01L2924/00012 , H01L2224/03 , H01L2224/11 , H01L2224/45015 , H01L2924/207
摘要： The present invention provides a non-cyanogen type electrolytic gold plating solution, which can form a plating film capable of maintaining a high hardness even when the plating film is subjected to a heat treatment. A non-cyanogen type electrolytic gold plating solution of the present invention includes: a gold source including an alkaline salt of gold sulfite or ammonium of gold sulfite; and a conductive salt including sulfite and sulfate. The non-cyanogen type electrolytic gold plating solution includes a salt of at least one of iridium, ruthenium, and rhodium in a metal concentration of 1 to 3000 mg/L. Further, the non-cyanogen type electrolytic gold plating solution preferably includes a crystal adjuster. The crystal adjuster is particularly preferably thallium.
摘要翻译： 本发明提供一种非氰型电解镀金液，即使在镀膜进行热处理时也能够形成能够保持高硬度的镀膜。 本发明的非氰型电解镀金液包括：金源，其包含亚硫酸亚铁的碱金属盐或亚硫酸金铵的铵盐; 以及包含亚硫酸盐和硫酸盐的导电盐。 非氰型电解镀金液含有金属浓度为1〜3000mg / L的铱，钌，铑中的至少一种的盐。 此外，非氰系电解镀金液优选含有晶体调节剂。 晶体调节剂特别优选为铊。
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公开(公告)号：US20020108850A1
公开(公告)日：2002-08-15
申请号：US09779526
申请日：2001-02-09
发明人： Yasuhiko Sakaki
IPC分类号： C25D017/00
CPC分类号： C25D17/001 , H01L21/2885 , Y10S204/07
摘要： This invention provides a technique capable of solving a problem of an ununiform plating on an annular edge portion of a surface to be plated of a wafer, which ununiform plating is usually caused due to an ununiform flow of a plating solution in a conventional cup-type plating apparatus, thereby ensuring a uniform plating treatment on an entire surface to be plated of a wafer. In detail, the present invention is directed to a cup-type plating apparatus comprising a wafer support section 2 provided along an upper opening of a plating tank 1, a plurality of solution-outlet passages 7 provided below the wafer support section 2 and extending from the inside of and to the outside of the plating tank 1, at least one solution-supply pipe 6 provided through the bottom of the plating tank 1. In use, a plating solution supplied through the at least one plating -solution-supply pipe 6 by virtue of an upward flow of the plating solution, is caused to form a plurality of outward flows passing through the plating-solution outlet passages 7 and thus reaching the outside of the plating tank 1, while at the same time the plating solution is caused to contact the surface 4 to be plated of a wafer 3 mounted on the wafer support section 2, to whereby carry out a plating treatment on the wafer 3. The apparatus of the invention is characterized by a stirring device 17, 18 for effecting a forced agitation of the plating solution supplied into the plating tank 1, provided below the surface 4 to be plated of the wafer 3 mounted on the wafer support section 2.
摘要翻译： 本发明提供一种技术，其能够解决晶片的待镀表面的环形边缘部分上的不均匀电镀的问题，由于常规杯型的电镀液的不均匀流动，通常会导致不均匀的电镀 电镀装置，从而确保在晶片的整个表面上进行均匀的电镀处理。 详细地说，本发明涉及一种杯型电镀装置，其包括沿着镀槽1的上开口设置的晶片支撑部分2，设置在晶片支撑部分2下方的多个溶液出口通道7， 电镀槽1的内部和外部，通过镀槽1的底部设置的至少一个溶液供应管6.在使用中，通过至少一个电镀溶液供应管6供应的电镀液 由于电镀液的向上流动，形成通过电镀液出口通路7的多个外流，从而到达镀槽1的外部，同时引起电镀液 接触要安装在晶片支撑部分2上的晶片3的待镀表面4，从而对晶片3进行电镀处理。本发明的装置的特征在于用于效率的搅拌装置17,18 在被安装在晶片支撑部2上的晶片3的待表面4的下方设置供给到镀槽1内的镀液的强制搅拌。
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公开(公告)号：US20020088708A1
公开(公告)日：2002-07-11
申请号：US10087845
申请日：2002-03-05
发明人： Yasuhiko Sakaki
IPC分类号： C25D017/00
CPC分类号： C25D17/001 , H01L21/2885 , Y10S204/07
摘要： A cup type plating apparatus in which plating is carried out by supplying plating solution to a wafer placed on an opening at a top of a plating tank while an anode and the wafer connected to a cathode provided in the plating tank are electrically connected, and the anode and the cathode are separated by diaphragm provided in the plating tank, provided with a division wall between the anode and the wafer formed in a shape capable of separating the anode and the wafer from each other and having a plurality of openings covered with diaphragm. The concentration of the plating solution supplied to the plating tank separated by the division wall is made to be appropriately controllable. Further, a unit for stirring is provided capable of forcibly altering the flow of plating solution at the target surface of plating.
摘要翻译： 一种杯式电镀装置，其中，通过将电镀溶液供给到放置在镀槽顶部的开口处的晶片，同时阳极和连接到设置在镀槽中的阴极的晶片电连接，进行电镀，并且 阳极和阴极通过设置在电镀槽中的隔膜隔开，在阳极和晶片之间设置有分隔壁，隔膜形成为能够将阳极和晶片彼此分离并具有多个被隔膜覆盖的开口的形状。 供给到由分隔壁分隔的镀槽的镀液的浓度适当地控制。 此外，提供一种用于搅拌的单元，其能够强制地改变镀层的目标表面处的电镀液的流动。
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公开(公告)号：US20220178050A1
公开(公告)日：2022-06-09
申请号：US17601821
申请日：2020-04-01
发明人： Tetsuo OKUTSU , Masahiro ITO , Akihiro TAKURA
摘要： Electromagnetic waves are uniformly distributed on the light-receiving surface side by taking advantage of their property of being easily concentrated in sharp parts, and the front area (SA) on the emission surface side is made larger than the back area (SB) on the light-receiving surface side (SA/SB>1), thereby forming a more moderate electric field region. A reduced gold fine particle group (average particle size: 20 nm) was self-assembled on a transparent polyester resin film and half-submerged and fixed. This base material was repeatedly immersed in an electroless gold plating solution so that gold particles were deposited on the gold fine particles. 10 microliters of a protein solution was added dropwise to this nanostructured substrate, and crystallized by a hanging drop vapor diffusion method.
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公开(公告)号：US12123106B2
公开(公告)日：2024-10-22
申请号：US17601821
申请日：2020-04-01
发明人： Tetsuo Okutsu , Masahiro Ito , Akihiro Takura
摘要： Electromagnetic waves are uniformly distributed on the light-receiving surface side by taking advantage of their property of being easily concentrated in sharp parts, and the front area (SA) on the emission surface side is made larger than the back area (SB) on the light-receiving surface side (SA/SB>1), thereby forming a more moderate electric field region. A reduced gold fine particle group (average particle size: 20 nm) was self-assembled on a transparent polyester resin film and half-submerged and fixed. This base material was repeatedly immersed in an electroless gold plating solution so that gold particles were deposited on the gold fine particles. 10 microliters of a protein solution was added dropwise to this nanostructured substrate, and crystallized by a hanging drop vapor diffusion method.
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公开(公告)号：US20190090357A1
公开(公告)日：2019-03-21
申请号：US16099876
申请日：2017-09-13
发明人： Masahiro ITO
摘要： A laminate structure of metal coating is laminated on a base material, and includes a primer layer, a catalyst layer and a plating deposited layer. The primer layer is a resin layer with a glass transition temperature (Tg) of 40 to 430° C. The catalyst layer is a metal nanoparticle group arranged in a plane on the primer layer, wherein the metal nanoparticle group is a metal in Group 11 or Groups 8, 9 and 10 in a periodic table, and the metal nanoparticles are surrounded by the primer layer. Ends of the metal nanoparticles are attached to the plating deposited layer.
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8.发明申请Copper plating solution for embedding fine wiring, and copper plating method using the same 审中-公开用于嵌入精细布线的镀铜溶液及使用其的镀铜方法公开(公告)号：US20030085133A1
公开(公告)日：2003-05-08
申请号：US10131324
申请日：2002-04-25
发明人： Takashi Totsuka , Toshio Kuzushima
IPC分类号： C25D003/38
CPC分类号： C25D3/38
摘要： The present invention provides a copper plating solution for embedding fine wiring, wherein it contains copper sulfate at 100 to 300 g/L as copper sulfate pentahydrate, sulfuric acid at 5 to 300 g/L, chlorine at 20 to 200 mg/L, a macromolecular surfactant at 0.05 to 20 g/L for controlling the electrodeposition reaction, sulfur-based saturated organic compound at 1 to 100 mg/L for accelerating the electrodeposition reaction, leveling agent composed of a macromolecular amine compound at 0.01 to 10 mg/L and reductant at 0.025 to 25 g/L for stabilizing the copper plating solution. The copper plating solution of the present invention for embedding fine wiring can plate the wafer surface provided with fine wiring patterns with sub-micron order gaps in-between and coated with copper serving as the metallic seed film, to fill the gaps neither leaving any defect therein nor dissolving the metallic seed film.
摘要翻译： 本发明提供一种嵌入微细布线的铜电镀液，其中含有硫酸铜五水合物为100〜300g / L的硫酸铜，5〜300g / L的硫酸，20〜200mg / L的氯， 用于控制电沉积反应的0.05〜20g / L的高分子表面活性剂，用于加速电沉积反应的1〜100mg / L的硫系饱和有机化合物，0.01〜10mg / L的高分子胺化合物的流平剂和 还原剂为0.025至25g / L，用于稳定镀铜溶液。 用于嵌入精细布线的本发明的镀铜溶液可以对具有精细布线图案的晶片表面进行平面化，其间具有亚微米级间隙，并且涂覆有用作金属种子膜的铜，以填充间隙，既不留下任何缺陷 其中也不溶解金属种子膜。
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公开(公告)号：US10306774B2
公开(公告)日：2019-05-28
申请号：US16099876
申请日：2017-09-13
发明人： Masahiro Ito
IPC分类号： H05K1/09 , H05K3/38 , H05K3/18 , B32B15/01 , B32B15/08 , C23C18/42 , C23C28/00 , C25D5/54 , H05K1/03
摘要： A laminate structure of metal coating is laminated on a base material, and includes a primer layer, a catalyst layer and a plating deposited layer. The primer layer is a resin layer with a glass transition temperature (Tg) of 40 to 430° C. The catalyst layer is a metal nanoparticle group arranged in a plane on the primer layer, wherein the metal nanoparticle group is a metal in Group 11 or Groups 8, 9 and 10 in a periodic table, and the metal nanoparticles are surrounded by the primer layer. Ends of the metal nanoparticles are attached to the plating deposited layer.
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公开(公告)号：US20010017258A1
公开(公告)日：2001-08-30
申请号：US09791840
申请日：2001-02-26
发明人： Hirofumi Ishida , Yoshiyuki Harima
IPC分类号： C25D017/06 , C25D017/00
CPC分类号： C25D17/001 , C25D17/06 , H01L21/288
摘要： The present invention provides a technique for removing air remaining on the peripheral edge of a surface to be plated in a conventional wafer plating apparatus, and to provide a wafer plating apparatus capable of performing a more uniform plating up to the peripheral edge of the surface to be plated, and which is further capable of performing plating even with respect to a wafer coated with a seed metal. This wafer plating apparatus includes a wafer clamp 6 for holding a wafer 4, a wafer support member 7 for supporting the peripheral edge of the surface 5 to be plated, and a plating tank 2 which circulates a plating solution while making the plating solution overflow from an upper opening of the tank. The wafer plating apparatus is arranged so as to perform plating, while the surface 5 to be plated is laid face down, being in contact with the surface of the plating solution, in a state in which the wafer 4 is clamped by the wafer clamp 6 and the wafer support member 7. In this wafer plating apparatus, the wafer support member 7 is equipped with air-vent grooves 12 for discharging the air which remains on the peripheral edge of the surface to be plated 5 while the surface of the plating solution and the wafer 4 make contact, the air-vent grooves 12 being formed at the lower end of the wafer support portion 10.
摘要翻译： 本发明提供了一种用于去除传统晶片电镀装置中待镀表面的周缘残留的空气的技术，并且提供了能够对表面的周边进行更均匀的电镀的晶片电镀装置， 并且即使对于涂覆有种子金属的晶片也能进行电镀。 该晶片电镀装置包括用于保持晶片4的晶片夹6，用于支撑待镀表面5的周缘的晶片支撑构件7，以及在使电镀液从 坦克的上部开口。 晶片电镀装置被布置成在晶片4被晶片夹具6夹紧的状态下进行电镀，同时将待镀表面5面向下放置在与电镀液表面接触的状态 在该晶片电镀装置中，晶片支撑部件7配备有排气槽12，用于排出剩余在被镀表面5的周缘上的空气，同时电镀液的表面 并且晶片4接触，排气槽12形成在晶片支撑部分10的下端。
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