公开(公告)号：US09595673B2

公开(公告)日：2017-03-14

申请号：US14355384

申请日：2012-10-26

Applicant: Electronics and Telecommunications Research Institute

Inventor： Hyun-Tak Kim ,  Bongjun Kim ,  Jeong Yong Choi ,  Jong Chan Park

IPC: H02H9/00 ,  H01L49/00

CPC classification number: H01L49/003

Abstract: The inventive concept shows the embodiment of t-switch which is a MIT 3-terminal device based on a Hole-driven MIT theory and a technology for removing an ESD noise signal which is one of applications of the t-switch. The t-switch includes three terminals of Inlet, Outlet and Control, and a metal-insulator transition (MIT) occurs at an Outlet layer by a current flowing through the Control terminal. In the t-switch, a high resistor is connected to the Control terminal and thereby an ESD noise signal of high voltage flows through the Inlet-Outlet without damaging the device.

Abstract translation: 本发明的概念示出了作为基于空穴驱动MIT理论的MIT 3端子装置和用于去除作为t开关的应用之一的ESD噪声信号的技术的t开关的实施例。 t开关包括三个入口，出口和控制端子，并且通过流过控制端子的电流在出口层处发生金属 - 绝缘体转变（MIT）。 在t开关中，高电阻连接到控制端子，从而高电压的ESD噪声信号流过入口插座而不会损坏器件。

公开(公告)号：US08587224B1

公开(公告)日：2013-11-19

申请号：US13929831

申请日：2013-06-28

Applicant: Electronics and Telecommunications Research Institute

Inventor： Hyun-Tak Kim ,  Bongjun Kim

IPC: H05B37/02 ,  H01L21/8222

CPC classification number: H01L27/0629 ,  H01L25/16 ,  H01L27/0248 ,  H01L49/003 ,  H01L2924/0002 ,  H03K17/145 ,  H01L2924/00

Abstract: Provided are a variable field effect transistor (FET) designed to suppress a reduction of current between a source and a drain due to heat while decreasing a temperature of the FET, and an electrical and electronic apparatus including the variable gate FET. The variable gate FET includes a FET and a gate control device that is attached to a surface or a heat-generating portion of the FET and is connected to a gate terminal of the FET so as to vary a voltage of the gate terminal. A channel current between the source and drain is controlled by the gate control device that varies the voltage of the gate terminal when the temperature of the FET increases above a predetermined temperature.

Abstract translation: 提供了一种可变场效应晶体管（FET），其设计成在降低FET的温度的同时抑制源极和漏极之间的电流的降低，以及包括可变栅极FET的电气和电子设备。 可变栅极FET包括FET和栅极控制装置，其连接到FET的表面或发热部分，并连接到FET的栅极端子，以便改变栅极端子的电压。 源极和漏极之间的沟道电流由栅极控制器控制，栅极控制器件当FET的温度升高到高于预定温度时改变栅极端子的电压。

公开(公告)号：US20140111343A1

公开(公告)日：2014-04-24

申请号：US13824956

申请日：2012-06-07

Applicant: Electronics and Telecommunications Research Institute

Inventor： Hyun-Tak Kim ,  Bongjun Kim ,  Jong Chan Park

IPC: G08B17/10 ,  G08B17/06

CPC classification number: G08B17/10 ,  G08B17/06 ,  G08B17/113

Abstract: Disclosed is a multipurpose alarm apparatus which includes a smoke sensing unit configured to sense a smoke using a first sensor and a second sensor, each of the first and second sensors including a temperature-sensitive smoke sensor portion disposed between a first electrode and a second electrode; a smoke level measuring unit configured to generate a smoke level measurement signal by comparing a difference between first and second smoke detection signals from the first and second sensors with a reference signal; and a sensing control unit configured to generate a fire alarm signal when the smoke level measurement signal corresponds to a fire generation condition.

Abstract translation: 公开了一种多用途报警装置，其包括烟感测单元，其被配置为使用第一传感器和第二传感器感测烟雾，第一和第二传感器中的每一个包括设置在第一电极和第二电极之间的温度敏感的烟雾传感器部分 ; 烟度测量单元，被配置为通过将来自第一和第二传感器的第一和第二烟雾检测信号之间的差与参考信号进行比较来产生烟度测量信号; 以及感测控制单元，被配置为当所述烟度测量信号对应于发火条件时产生火灾报警信号。

公开(公告)号：US20140285933A1

公开(公告)日：2014-09-25

申请号：US14355384

申请日：2012-10-26

Applicant: ELectronics and Telecommunications Research Institute

Inventor： Hyun-Tak Kim ,  Bongjun Kim ,  Jeong Yong Choi ,  Jong Chan Park

IPC: H02H9/04 ,  H01L49/00

CPC classification number: H01L49/003

Abstract: The inventive concept shows the embodiment of t-switch which is a MIT 3-terminal device based on a Hole-driven MIT theory and a technology for removing an ESD noise signal which is one of applications of the t-switch. The t-switch includes three terminals of Inlet, Outlet and Control, and a metal-insulator transition (MIT) occurs at an Outlet layer by a current flowing through the Control terminal. In the t-switch, a high resistor is connected to the Control terminal and thereby an ESD noise signal of high voltage flows through the Inlet-Outlet without damaging the device.

Abstract translation: 本发明的概念示出了作为基于空穴驱动MIT理论的MIT 3端子装置和用于去除作为t开关的应用之一的ESD噪声信号的技术的t开关的实施例。 t开关包括三个入口，出口和控制端子，并且通过流过控制端子的电流在出口层处发生金属 - 绝缘体转变（MIT）。 在t开关中，高电阻连接到控制端子，从而高电压的ESD噪声信号流过入口插座而不会损坏器件。

公开(公告)号：US09898911B2

公开(公告)日：2018-02-20

申请号：US15592830

申请日：2017-05-11

Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

Inventor： Hyun-Tak Kim ,  Bongjun Kim ,  Jong Chan Park

IPC: G08B17/06 ,  H01C7/04 ,  H01H37/32 ,  H01L27/02 ,  H01L27/06 ,  H01L49/00 ,  H02H9/04

CPC classification number: G08B17/06 ,  H01C1/02 ,  H01C7/047 ,  H01H37/32 ,  H01L27/0248 ,  H01L27/0647 ,  H01L49/003 ,  H02H9/045

Abstract: The inventive concept provides MIT devices molded by clear compound epoxy and fire detecting devices including the MIT device. The fire detecting device is supplied with a power source from a power control device. The fire detecting device includes a MIT device including a MIT chip molded by a clear compound epoxy, a diode bridge circuit supplied with the power source from the power control device for providing a non-polar power source, a notice circuit supplied with the non-polar power source from the diode bridge circuit for warning of a fire alarm in response to a detecting signal from the MIT device, and a stabilization circuit for maintaining the detecting signal for a certain period.