公开(公告)号：US09478385B2

公开(公告)日：2016-10-25

申请号：US14339004

申请日：2014-07-23

Applicant: Electronics and Telecommunications Research Institute

Inventor： Jae-woo Kim ,  Yoon-Ho Song ,  Jin Woo Jeong ,  Jun Tae Kang ,  Sungyoul Choi ,  Jeong Yong Choi

IPC: H01J9/02 ,  H01J1/304 ,  H01J1/34 ,  H01J35/06 ,  B82Y30/00

CPC classification number: H01J1/304 ,  B82Y30/00 ,  H01J1/34 ,  H01J35/065 ,  H01J2201/30469 ,  H01J2201/3423 ,  Y10S977/742 ,  Y10S977/939

Abstract: Provided are a field emission device and a method of manufacturing the same. The field emission device includes an anode electrode and a cathode electrode which are opposite to each other, a counter layer provided on the anode electrode, and a field emitter provided on the cathode electrode and facing the counter layer. Herein, the field emitter includes a carbon nanotube emitting cold electrons and a photoelectric material emitting photo electrons.

Abstract translation: 提供场致发射器件及其制造方法。 场致发射器件包括彼此相对的阳极电极和阴极电极，设置在阳极电极上的对置层，以及设置在阴极电极上且面向对置层的场致发射体。 这里，场致发射体包括发射冷电子的碳纳米管和发射光电子的光电材料。

公开(公告)号：US20140285933A1

公开(公告)日：2014-09-25

申请号：US14355384

申请日：2012-10-26

Applicant: ELectronics and Telecommunications Research Institute

Inventor： Hyun-Tak Kim ,  Bongjun Kim ,  Jeong Yong Choi ,  Jong Chan Park

IPC: H02H9/04 ,  H01L49/00

CPC classification number: H01L49/003

Abstract: The inventive concept shows the embodiment of t-switch which is a MIT 3-terminal device based on a Hole-driven MIT theory and a technology for removing an ESD noise signal which is one of applications of the t-switch. The t-switch includes three terminals of Inlet, Outlet and Control, and a metal-insulator transition (MIT) occurs at an Outlet layer by a current flowing through the Control terminal. In the t-switch, a high resistor is connected to the Control terminal and thereby an ESD noise signal of high voltage flows through the Inlet-Outlet without damaging the device.

Abstract translation: 本发明的概念示出了作为基于空穴驱动MIT理论的MIT 3端子装置和用于去除作为t开关的应用之一的ESD噪声信号的技术的t开关的实施例。 t开关包括三个入口，出口和控制端子，并且通过流过控制端子的电流在出口层处发生金属 - 绝缘体转变（MIT）。 在t开关中，高电阻连接到控制端子，从而高电压的ESD噪声信号流过入口插座而不会损坏器件。

公开(公告)号：US09595673B2

公开(公告)日：2017-03-14

申请号：US14355384

申请日：2012-10-26

Applicant: Electronics and Telecommunications Research Institute

Inventor： Hyun-Tak Kim ,  Bongjun Kim ,  Jeong Yong Choi ,  Jong Chan Park

IPC: H02H9/00 ,  H01L49/00

CPC classification number: H01L49/003

Abstract: The inventive concept shows the embodiment of t-switch which is a MIT 3-terminal device based on a Hole-driven MIT theory and a technology for removing an ESD noise signal which is one of applications of the t-switch. The t-switch includes three terminals of Inlet, Outlet and Control, and a metal-insulator transition (MIT) occurs at an Outlet layer by a current flowing through the Control terminal. In the t-switch, a high resistor is connected to the Control terminal and thereby an ESD noise signal of high voltage flows through the Inlet-Outlet without damaging the device.

Abstract translation: 本发明的概念示出了作为基于空穴驱动MIT理论的MIT 3端子装置和用于去除作为t开关的应用之一的ESD噪声信号的技术的t开关的实施例。 t开关包括三个入口，出口和控制端子，并且通过流过控制端子的电流在出口层处发生金属 - 绝缘体转变（MIT）。 在t开关中，高电阻连接到控制端子，从而高电压的ESD噪声信号流过入口插座而不会损坏器件。

公开(公告)号：US09178126B2

公开(公告)日：2015-11-03

申请号：US13905950

申请日：2013-05-30

Applicant: Electronics and Telecommunications Research Institute

Inventor： Hyun-Tak Kim ,  Jeong Yong Choi ,  Hyun-Woo Jeon ,  Jae ho Choi ,  Gi-wan Seo

IPC: H01L35/30 ,  H01L35/12 ,  H01L35/20 ,  H01L35/22

CPC classification number: H01L35/12 ,  H01L35/20 ,  H01L35/22

Abstract: Provided is a thermoelectric device including a first electrode, a substrate electrically connected to the first electrode, a thin film on the substrate, and a second electrode on the thin film. The substrate and the thin film may be configured to exhibit a metallic property at a temperature over a critical temperature, thereby having a thermoelectric power of the device that is higher than that of a semiconductor junction.

Abstract translation: 提供了一种热电装置，其包括第一电极，与第一电极电连接的基板，基板上的薄膜和薄膜上的第二电极。 衬底和薄膜可以被配置为在超过临界温度的温度下表现出金属性质，由此具有比半导体结的高的热电功率。