PLASMA GENERATOR
    1.
    发明公开
    PLASMA GENERATOR 审中-公开

    公开(公告)号:US20230143330A1

    公开(公告)日:2023-05-11

    申请号:US17920506

    申请日:2021-05-07

    Inventor: Akinori EBE

    CPC classification number: H05H1/2439 H05H1/2425

    Abstract: A plasma generator includes an AC power supply, a power supply electrode and a ground electrode, one of which is disposed in a gas flow path and the other of which is a conductive wall constituting the gas flow path, an inflexible connection member configured to electrically connect the AC power supply and the power supply electrode, and an insulating material (power supply side insulating material, ground side insulating material) covering a side of one of the power supply electrode and the ground electrode, the side facing the other electrode.

    RADIO-FREQUENCY ANTENNA AND PLASMA PROCESSING DEVICE

    公开(公告)号:US20210327683A1

    公开(公告)日:2021-10-21

    申请号:US17232789

    申请日:2021-04-16

    Abstract: A radio-frequency antenna through which a high amount of current can be efficiently passed even at a radio-frequency level for plasma generation, as well as a plasma processing device utilizing the radio-frequency antenna. A radio-frequency antenna includes a metal fiber sheet. A plasma processing device includes: a vacuum container including a wall having an opening; a radio-frequency antenna including a metal fiber sheet and located at the opening; and a dielectric protection plate located closer to the interior of the vacuum container than the radio-frequency antenna and configured to close the opening in a gas-tight manner. The radio-frequency antenna including a metal fiber sheet has a larger surface area and a lower impedance to a radio-frequency current than a radio-frequency antenna including a metal plate having the same outer shape. Therefore, it allows a radio-frequency current commonly used for plasma generation to be more efficiently passed through in large amounts.

    PLASMA SOURCE AND PLASMA PROCESSING APPARATUS

    公开(公告)号:US20190333735A1

    公开(公告)日:2019-10-31

    申请号:US16312424

    申请日:2017-06-16

    Inventor: Akinori EBE

    Abstract: A plasma source which is capable of supplying a plasma processing space with plasma in a state where gas is sufficiently ionized is a device for supplying plasma to a plasma processing space in which a process using the plasma is performed, and includes: a plasma generation chamber; an opening that allows the plasma generation chamber to communicate with the plasma processing space; a radio-frequency antenna that is a coil of less than one turn provided in a position where a radio-frequency electromagnetic field having predetermined strength required to generate plasma is able to be generated in the plasma generation chamber; voltage application electrodes in a position close to the opening in the plasma generation chamber; and a gas supply unit (pipe) that supplies plasma source gas to a position closer to the side opposite to the opening than the voltage application electrodes in the plasma generation chamber.

    PLASMA SOURCE
    5.
    发明申请

    公开(公告)号:US20210127476A1

    公开(公告)日:2021-04-29

    申请号:US17071672

    申请日:2020-10-15

    Inventor: Akinori EBE

    Abstract: An inductively coupled plasma source with a simple configuration, has an antenna cooling mechanism capable of reducing costs required for such devices. The plasma source is configured to generate plasma in a vacuum vessel, and includes a frame (antenna fixing frame) provided in a wall of the vacuum vessel and a surface antenna fixed in the frame. Periphery of the antenna is surrounded by the frame, so that heat generated in the antenna flows from the periphery to the frame and further flows from the frame to the vacuum vessel. Thus, the antenna is efficiently cooled. Therefore, a liquid or gas refrigerant is unnecessary, and thus the configuration can be simplified. Furthermore, a temperature control device and a circulation device are unnecessary, so that the cost required for the devices is reduced.

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