公开(公告)号：US20230402271A1

公开(公告)日：2023-12-14

申请号：US18237934

申请日：2023-08-25

Applicant: APPLIED MATERIALS, INC.

Inventor： Xiaodong WANG ,  Joung Joo LEE ,  Fuhong ZHANG ,  Martin Lee RIKER ,  Keith A. MILLER ,  William FRUCHTERMAN ,  Rongjun WANG ,  Adolph Miller ALLEN ,  Shouyin ZHANG ,  Xianmin TANG

IPC: H01J37/34 ,  C23C14/34 ,  C23C14/35 ,  C23C14/54

CPC classification number: H01J37/3458 ,  H01J37/345 ,  H01J37/3452 ,  H01J37/3411 ,  C23C14/345 ,  H01J37/3441 ,  H01J37/3402 ,  C23C14/351 ,  C23C14/54 ,  H01J37/3405 ,  H01J37/3447 ,  H01J37/3455

Abstract: Methods and apparatus for processing substrates are disclosed. In some embodiments, a process chamber for processing a substrate includes: a body having an interior volume and a target to be sputtered, the interior volume including a central portion and a peripheral portion; a substrate support disposed in the interior volume opposite the target and having a support surface configured to support the substrate; a collimator disposed in the interior volume between the target and the substrate support; a first magnet disposed about the body proximate the collimator; a second magnet disposed about the body above the support surface and entirely below the collimator and spaced vertically below the first magnet; and a third magnet disposed about the body and spaced vertically between the first magnet and the second magnet. The first, second, and third magnets are configured to generate respective magnetic fields to redistribute ions over the substrate.

公开(公告)号：US20180245217A1

公开(公告)日：2018-08-30

申请号：US15901145

申请日：2018-02-21

Applicant: Ascentool, Inc.

Inventor： George Xinsheng Guo

IPC: C23C16/458 ,  C23C16/04 ,  C23C16/46 ,  C23C16/513

CPC classification number: C23C16/4587 ,  C23C14/044 ,  C23C14/352 ,  C23C16/04 ,  C23C16/042 ,  C23C16/45563 ,  C23C16/46 ,  C23C16/50 ,  C23C16/513 ,  H01J37/32715 ,  H01J37/32743 ,  H01J37/32779 ,  H01J37/32899 ,  H01J37/3417 ,  H01J37/3435 ,  H01J37/3447 ,  H01J37/345

Abstract: A high throughput deposition apparatus includes a process chamber, a plurality of targets that form a first closed loop in the process chamber, wherein the first closed loop includes a long dimension defined by at least a first pair of targets and a short dimension defined by at least a second pair of targets, a first substrate carrier assembly that can hold one or more substrates and configured to receive a deposition material from the plurality of targets in the first closed loop, and a transport mechanism that can move the first substrate carrier assembly along an axial direction through the first closed loop in the first process chamber.

公开(公告)号：US10056238B2

公开(公告)日：2018-08-21

申请号：US15193484

申请日：2016-06-27

Applicant: Cardinal CG Company

Inventor： Klaus H. W. Hartig

IPC: C23C14/34 ,  H01J37/34 ,  C23C14/35

CPC classification number: H01J37/3455 ,  C23C14/35 ,  H01J37/3405 ,  H01J37/3408 ,  H01J37/345 ,  H01J37/3497

Abstract: The invention provides a sputter deposition assembly that includes a sputtering chamber, a sputtering target, and a magnet assembly. The magnet assembly includes a magnetic backing plate with a blind recess into which a moveable magnetic control body can be adjustably disposed.

公开(公告)号：US20180057928A1

公开(公告)日：2018-03-01

申请号：US15548540

申请日：2015-07-15

Applicant: ULVAC, INC.

Inventor： Hiroki Yamamoto ,  Takahiro Nanba ,  Masanobu Kamii ,  Shinji Kohari ,  Tomoyasu Kondo ,  Naoki Morimoto

IPC: C23C14/34 ,  H01L43/12 ,  H01J37/34 ,  C23C14/50 ,  C23C14/56

CPC classification number: C23C14/34 ,  C23C14/081 ,  C23C14/082 ,  C23C14/352 ,  C23C14/50 ,  C23C14/566 ,  H01J37/3405 ,  H01J37/3417 ,  H01J37/3426 ,  H01J37/3447 ,  H01J37/345 ,  H01J37/3473 ,  H01L43/12

Abstract: There is provided a sputtering apparatus which is capable of forming, with good uniformity of film thickness distribution, an insulator film having further improved crystallinity. Inside a vacuum chamber in which is provided an insulator target, there is disposed a stage for holding a substrate W to be processed so as to face the insulator target. The sputtering apparatus has: a driving means for driving to rotate the stage; a sputtering power source E1 for applying HF power to the insulator target; and a gas introduction means for introducing a rage gas into the vacuum chamber. The sputtering apparatus is characterized in that a distance d3 between the substrate and the insulator target is set to a range between 40 mm-150 mm.

公开(公告)号：US09859117B2

公开(公告)日：2018-01-02

申请号：US14740560

申请日：2015-06-16

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki

IPC: H01L21/02 ,  C23C14/08 ,  H01J37/32 ,  C23C14/58 ,  C23C14/34 ,  C23C14/35 ,  C23C14/56 ,  H01J37/34

CPC classification number: H01L21/02631 ,  C23C14/08 ,  C23C14/086 ,  C23C14/3414 ,  C23C14/35 ,  C23C14/566 ,  C23C14/5806 ,  H01J37/3408 ,  H01J37/345 ,  H01L21/02554 ,  H01L21/02565

Abstract: An oxide that can be used for a semiconductor in a transistor or the like is formed. After a sputtering gas is supplied to a deposition chamber, a plasma including ions of the sputtering gas in the vicinity of a target. The ion of the sputtering gas is accelerated and collides with a target, so that flat-plate particles and atoms included in the target are separated from the target. Surfaces of the plurality of flat-plate particles are negatively charged in plasma. One of the flat-plate particles negatively charged is deposited with a surface facing a substrate. Another flat-plate particle is deposited in a region apart from the one flat-plate particle over the substrate while repelling the one flat-plate particle. An atom and an aggregate of atoms are inserted in a gap between the one flat-plate particle and the another flat-plate particle and grow in the lateral direction in the gap between the flat-plate particles, so that the gap between the one flat-plate particle and the another flat-plate particle is filled.

公开(公告)号：US20170369988A1

公开(公告)日：2017-12-28

申请号：US15699704

申请日：2017-09-08

Applicant: Toshiba Memory Corporation

Inventor： Tatsuhiko MIURA ,  Kazuhiro MURAKAMI

IPC: C23C14/35 ,  C23C14/34 ,  H01L23/552 ,  C23C14/50 ,  H01J37/32 ,  H01J37/34

CPC classification number: C23C14/35 ,  C23C14/3407 ,  C23C14/50 ,  H01J37/32715 ,  H01J37/345 ,  H01L23/552 ,  H01L2224/04042 ,  H01L2224/06135 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2225/06506 ,  H01L2225/0651 ,  H01L2225/06537 ,  H01L2225/06562 ,  H01L2924/15311 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00

Abstract: In one embodiment, a semiconductor manufacturing apparatus includes a carrier having first and second ends extending in a first direction, and third and fourth ends extending in a second direction and being not shorter than the first and second ends. The apparatus further includes a member holder having a magnet placement face on which first and second magnetic-pole portions are placed, the magnet placement face having fifth and sixth ends extending in the first direction and being shorter than the first and second ends, and seventh and eighth ends extending in the second direction, being longer than the fifth and sixth ends, and being longer than the third and fourth ends. The apparatus further includes a carrier transporter transporting the carrier along the first direction. The carrier transporter can transport the carrier such that the third and fourth ends pass under a center line of the magnet placement face.

公开(公告)号：US09791415B2

公开(公告)日：2017-10-17

申请号：US14750148

申请日：2015-06-25

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Tsung-Jen Yang ,  Cheng-Chieh Chen ,  Hong-Hsing Chou

IPC: C23C14/00 ,  G01N29/07 ,  C23C14/54 ,  G01B17/02 ,  G01N29/032 ,  G01N29/11 ,  C23C14/34 ,  C23C16/52 ,  H01J37/32 ,  H01J37/34

CPC classification number: G01N29/07 ,  C23C14/3407 ,  C23C14/54 ,  C23C16/52 ,  G01B17/02 ,  G01N29/032 ,  G01N29/11 ,  G01N2291/011 ,  G01N2291/015 ,  G01N2291/0237 ,  G01N2291/02854 ,  G01N2291/103 ,  G01N2291/2697 ,  H01J37/32935 ,  H01J37/345 ,  H01J37/3479

Abstract: A system for semiconductor manufacturing that uses ultrasonic waves for estimating and monitoring a remaining service lifetime of a consumable element is provided. A consumable element comprises a front side arranged inside a process chamber and a back side, opposite the front side, arranged outside the process chamber. An ultrasonic transducer is arranged on the back side of the consumable element, and directed towards the front side of the consumable element. A monitoring unit is configured to estimate and monitor a remaining service lifetime of the consumable element using the ultrasonic transducer. A method for estimating and monitoring the remaining service lifetime of the consumable element using ultrasonic waves is also provided.

公开(公告)号：US09761441B2

公开(公告)日：2017-09-12

申请号：US14792597

申请日：2015-07-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeonghee Park ,  Jae Yeol Park

IPC: C23C14/34 ,  H01L21/02 ,  C23C14/35 ,  H01J37/34 ,  H01L45/00 ,  C23C14/06 ,  H01J37/32

CPC classification number: H01L21/02266 ,  C23C14/0623 ,  C23C14/3407 ,  C23C14/35 ,  H01J37/32669 ,  H01J37/3405 ,  H01J37/345 ,  H01J37/3452 ,  H01J37/3455 ,  H01J2237/332 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/1625

Abstract: Embodiments relate generally to semiconductor device fabrication and processes, and more particularly, to systems and methods that implement magnetic field generators configured to generate rotating magnetic fields to facilitate physical vapor deposition (“PVD”). In one embodiment, a system generates a first portion of a magnetic field adjacent a first circumferential portion of a substrate, and can generate a second portion of the magnetic field adjacent to a second circumferential portion of the substrate. The second circumferential portion is disposed at an endpoint of a diameter that passes through an axis of rotation to another endpoint of the diameter at which the first circumferential portion resides. The second peak magnitude can be less than the first peak magnitude. The system rotates the first and second portions of the magnetic fields to decompose a target material to form a plasma adjacent the substrate. The system forms a film upon the substrate.

公开(公告)号：US09758863B2

公开(公告)日：2017-09-12

申请号：US14799798

申请日：2015-07-15

Applicant: Toshiba Memory Corporation

Inventor： Tatsuhiko Miura ,  Kazuhiro Murakami

IPC: C23C14/00 ,  C23C14/35 ,  H01L23/552 ,  H01J37/32 ,  C23C14/34 ,  C23C14/50 ,  H01J37/34

CPC classification number: C23C14/35 ,  C23C14/3407 ,  C23C14/50 ,  H01J37/32715 ,  H01J37/345 ,  H01L23/552 ,  H01L2224/04042 ,  H01L2224/06135 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2225/06506 ,  H01L2225/0651 ,  H01L2225/06537 ,  H01L2225/06562 ,  H01L2924/15311 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00

Abstract: In one embodiment, a semiconductor manufacturing apparatus includes a carrier having first and second ends extending in a first direction, and third and fourth ends extending in a second direction and being not shorter than the first and second ends. The apparatus further includes a member holder having a magnet placement face on which first and second magnetic-pole portions are placed, the magnet placement face having fifth and sixth ends extending in the first direction and being shorter than the first and second ends, and seventh and eighth ends extending in the second direction, being longer than the fifth and sixth ends, and being longer than the third and fourth ends. The apparatus further includes a carrier transporter transporting the carrier along the first direction. The carrier transporter can transport the carrier such that the third and fourth ends pass under a center line of the magnet placement face.

公开(公告)号：US09752229B2

公开(公告)日：2017-09-05

申请号：US14905123

申请日：2014-06-25

Applicant: KOBE STEEL, LTD.

Inventor： Satoshi Hirota

IPC: C23C14/35 ,  H01J37/34

CPC classification number: C23C14/35 ,  C23C14/352 ,  H01J37/3405 ,  H01J37/3447 ,  H01J37/345

Abstract: A film deposition device including a DMS target and a film-deposition power source, being capable of pre-sputtering the target by use of the film-deposition power source. The film deposition device includes: a film deposition chamber; first and second cathodes each having a target and disposed next to each other wherein surfaces of the target face a substrate; a magnetic-field formation unit forming a magnetic field in vicinity of the target surfaces; a film-deposition power source connected to both of the cathodes; and a shutter. The shutter makes an opening-closing action between a close portion at which the shutter is interposed between the substrate and the target surfaces of both cathodes to block the target surfaces collectively from the substrate and an open position to allow film deposition on the substrate through opening the space between the target surfaces and the substrate.