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公开(公告)号：US11091695B2
公开(公告)日：2021-08-17
申请号：US16855864
申请日：2020-04-22
Applicant: ENF TECHNOLOGY CO., LTD.
Inventor： Hye Hee Lee , Hyeon Woo Park , Myung Ho Lee , Myung Geun Song
IPC: C09K13/06
Abstract: Provided are an etching composition and an etching method using the same, and more particularly, an etching composition for selectively etching a metal nitride film, an etching method of the metal nitride film using the same, and a method of manufacturing a microelectronic device including a process performed using the same.
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