公开(公告)号：US20030160172A1

公开(公告)日：2003-08-28

申请号：US09834446

申请日：2001-04-13

Applicant: EPIR LTD.

Inventor： Renganathan Ashokan ,  Paul Boieriu ,  Yuanping Chen ,  Jean-Pierre Faurie ,  Sivalingam Sivananthan

IPC: G01J005/20

CPC classification number: H01L27/1465 ,  H01L27/14609 ,  H01L27/14634 ,  H01L27/14652 ,  H01L27/14687 ,  H01L27/1469

Abstract: Multispectral infrared detectors are needed for advanced imaging systems with capabilities to discriminate actual targets against decoys. Simultaneous detection of the infrared radiation emitted by the target in more than one wavelength range has significant advantages for this purpose. In the current invention, a technology for producing a plurality of multi-color infrared sensing elements in a monolithic array format is provided. Each element has a multi-layer structure of mercury cadmium telluride (HgCdTe), a group II-VI semiconductor. The unit cell of the integrated detector consists of two co-located detectors, each sensitive to a different infrared wavelength. The prior art to produce such infrared device arrays is nullhybrid technologynull, meaning the infrared sensing elements and the read-out electronics are fabricated on two different materials-silicon and HgCdTe and joined together by indium pillars/bumps. The yield and reliability are poor in the prior art due to the large difference in the thermal expansion of the two dissimilar materials. The unique feature of the current invention is producing multi-color infrared sensing device monolithically connected to the readout electronic circuit, both fabricated on a common silicon substrate. This invention is benefited from the high performances achieved in both silicon-based readout electronics and HgCdTe-based infrared detectors. Furthermore, the current invention eliminates the columnar indium metal electrodes and the low-yield hybridization process by the direct growth of the complex HgCdTe structure on pre-fabricated read-out electronics on a common silicon substrate by Molecular Beam Epitaxy (MBE).

Abstract translation: 先进的成像系统需要多光谱红外探测器，能够区分实际目标与诱饵。 同时检测目标在一个以上波长范围内发射的红外线辐射对此有显着的优势。 在本发明中，提供了以单体阵列格式制造多个多色红外线感测元件的技术。 每个元件具有碲化镉（HgCdTe），II-VI族半导体的多层结构。 集成检测器的单位单元由两个共同位置的检测器组成，每个检测器对不同的红外波长敏感。 制造这种红外元件阵列的现有技术是“混合技术”，意思是将红外感测元件和读出电子器件制造在两种不同的材料 - 硅和HgCdTe之间，并通过铟柱/凸块连接在一起，产量和可靠性 由于两种不同材料的热膨胀差异很大，本发明的独特之处在于生产与读出的电子电路单片连接的多色红外感测装置，两者均制造在公共硅衬底上 本发明受益于硅基读出电子器件和基于HgCdTe的红外检测器的高性能，此外，本发明通过复合HgCdTe的直接生长消除了柱状铟金属电极和低产率杂交工艺 通过Molecular Beam Epitax在普通硅衬底上预制的读出电子器件的结构 y（MBE）。

公开(公告)号：US20030102432A1

公开(公告)日：2003-06-05

申请号：US09833363

申请日：2001-04-12

Applicant: EPIR LTD.

Inventor： Paul Boieriu ,  Renganathan Ashokan ,  Yuanping Chen ,  Jean-Pierre Faurie ,  Sivalingam Sivananthan

IPC: G01T001/24 ,  H01L027/14

CPC classification number: H01L27/14687 ,  H01L27/14609 ,  H01L27/1465 ,  H01L27/14652 ,  H01L27/1469

Abstract: An infrared sensing device including a multi-layer II-VI semiconductor material grown by molecular beam epitaxy on a readout circuit fabricated on silicon substrate having a orientation one degree tilted from the (100) direction is provided in this invention. A method to grow single crystalline mercury cadmium telluride multi-layer structure on custom-designed readout circuit (ROIC) is provided. Due to the height difference of more than 15 micron between the two planes containing the detector output gates and the ROIC signal input gates, a mesa with at least one sloped side is fabricated and the interconnecting metal electrodes running on them to connect the detector output to ROIC input. Planar photovoltaic junctions are fabricated selectively on the II-VI mesa structure formed on ROIC. At least one infrared detecting cell being formed in the mesa, with a conductor interconnect layer connecting the detection cell to the readout integrated circuit. Another design to simultaneously produce two linear arrays of monolithic infrared detectors is provided by the suitable design of the ROIC input pads and the infrared detector arrays.

Abstract translation: 在本发明中提供了一种红外感测装置，其包括通过分子束外延生长的多层II-VI半导体材料，其制造在具有从（100）方向倾斜一度的硅衬底上的读出电路上。 提供了一种在定制设计的读出电路（ROIC）上生长单晶碲化镉多层结构的方法。 由于在包含检测器输出门和ROIC信号输入门的两个平面之间的高度差超过15微米，制造了具有至少一个倾斜侧的台面，并且互连金属电极在其上运行以将检测器输出连接到 ROIC输入。 选择性地在ROIC上形成的II-VI台面结构上制造平面光电结。 在台面中形成至少一个红外线检测单元，其中导体互连层将检测单元连接到读出集成电路。 通过ROIC输入焊盘和红外探测器阵列的合适设计，提供了同时生产两个线性阵列的单片红外探测器的另一种设计。