公开(公告)号：US20040140430A1

公开(公告)日：2004-07-22

申请号：US10388862

申请日：2003-03-14

Inventor： Eric Scott Micko

IPC: G01J005/20

CPC classification number: G08B13/19 ,  G08B29/183

Abstract: A passive infrared sensor uses two detectors having elements of different configurations such that each element outputs a respective frequency when an object moves in front of it. Based on the presence of two frequencies with similar peak and/or slope characteristics, a motion signal is output to, e.g., activate an alarm. In another embodiment the detectors have plural elements with the elements of one detector being wired in a dimension that is orthogonal to the dimension in which the elements of the other detector are wired. The signals from the detectors are combined to determine motion and size of object. The detector elements can also be configured differently from each other as in the first embodiment, and the polarities of signals can be used to determine direction of motion.

Abstract translation: 被动红外传感器使用具有不同构造元件的两个检测器，使得当物体在其前方移动时，每个元件输出相应的频率。 基于具有类似峰值和/或斜率特性的两个频率的存在，输出运动信号以例如激活报警。 在另一个实施例中，检测器具有多个元件，其中一个检测器的元件以与另一检测器的元件布线的尺寸正交的尺寸布线。 来自检测器的信号被组合以确定物体的运动和尺寸。 检测器元件也可以如第一实施例中那样彼此不同地配置，并且可以使用信号的极性来确定运动方向。

公开(公告)号：US20020003214A1

公开(公告)日：2002-01-10

申请号：US09121382

申请日：1998-07-23

Inventor： JOSEPH F. MORRISSEY JR. ,  JEFFREY WALTERS

IPC: G01J005/20

CPC classification number: G01J1/04 ,  G01J1/0418

Abstract: A filtered photocontroller with a housing including a window portion; a circuit board within the housing including a light sensor behind the window portion of the housing; and a polymer filter which attenuates infrared radiation in front of the light sensor for improving the responsiveness of the photocontroller.

Abstract translation: 一种具有壳体的经过滤光控制器，包括窗口部分; 所述壳体内的电路板包括在所述壳体的所述窗口部分之后的光传感器; 以及聚合物过滤器，其衰减光传感器前面的红外辐射，以改善光控制器的响应性。

公开(公告)号：US20030160172A1

公开(公告)日：2003-08-28

申请号：US09834446

申请日：2001-04-13

Applicant: EPIR LTD.

Inventor： Renganathan Ashokan ,  Paul Boieriu ,  Yuanping Chen ,  Jean-Pierre Faurie ,  Sivalingam Sivananthan

IPC: G01J005/20

CPC classification number: H01L27/1465 ,  H01L27/14609 ,  H01L27/14634 ,  H01L27/14652 ,  H01L27/14687 ,  H01L27/1469

Abstract: Multispectral infrared detectors are needed for advanced imaging systems with capabilities to discriminate actual targets against decoys. Simultaneous detection of the infrared radiation emitted by the target in more than one wavelength range has significant advantages for this purpose. In the current invention, a technology for producing a plurality of multi-color infrared sensing elements in a monolithic array format is provided. Each element has a multi-layer structure of mercury cadmium telluride (HgCdTe), a group II-VI semiconductor. The unit cell of the integrated detector consists of two co-located detectors, each sensitive to a different infrared wavelength. The prior art to produce such infrared device arrays is nullhybrid technologynull, meaning the infrared sensing elements and the read-out electronics are fabricated on two different materials-silicon and HgCdTe and joined together by indium pillars/bumps. The yield and reliability are poor in the prior art due to the large difference in the thermal expansion of the two dissimilar materials. The unique feature of the current invention is producing multi-color infrared sensing device monolithically connected to the readout electronic circuit, both fabricated on a common silicon substrate. This invention is benefited from the high performances achieved in both silicon-based readout electronics and HgCdTe-based infrared detectors. Furthermore, the current invention eliminates the columnar indium metal electrodes and the low-yield hybridization process by the direct growth of the complex HgCdTe structure on pre-fabricated read-out electronics on a common silicon substrate by Molecular Beam Epitaxy (MBE).

Abstract translation: 先进的成像系统需要多光谱红外探测器，能够区分实际目标与诱饵。 同时检测目标在一个以上波长范围内发射的红外线辐射对此有显着的优势。 在本发明中，提供了以单体阵列格式制造多个多色红外线感测元件的技术。 每个元件具有碲化镉（HgCdTe），II-VI族半导体的多层结构。 集成检测器的单位单元由两个共同位置的检测器组成，每个检测器对不同的红外波长敏感。 制造这种红外元件阵列的现有技术是“混合技术”，意思是将红外感测元件和读出电子器件制造在两种不同的材料 - 硅和HgCdTe之间，并通过铟柱/凸块连接在一起，产量和可靠性 由于两种不同材料的热膨胀差异很大，本发明的独特之处在于生产与读出的电子电路单片连接的多色红外感测装置，两者均制造在公共硅衬底上 本发明受益于硅基读出电子器件和基于HgCdTe的红外检测器的高性能，此外，本发明通过复合HgCdTe的直接生长消除了柱状铟金属电极和低产率杂交工艺 通过Molecular Beam Epitax在普通硅衬底上预制的读出电子器件的结构 y（MBE）。

公开(公告)号：US20030111605A1

公开(公告)日：2003-06-19

申请号：US10258641

申请日：2002-10-25

Inventor： Shigemi Sato ,  Hideto Yamashita ,  Tsutomu Hagihara

IPC: G01J005/20

CPC classification number: G01J5/16

Abstract: To provide a thermopile infrared detecting element capable of accurate temperature measurement at low cost. An infrared detecting element 1 using a silicon nitride film as a first structure layer 22 constituting a structure of a membrane portion 4 is provided. Unlike silicon oxide, the first structure layer 22 has internal stress in the tensile direction, and can thus prevent the occurrence of bending. Also, diodes D1 and D2 can be formed in a silicon substrate 2 by using the first structure layer 22 as an element isolation region, and thus deformation of a thermopile 12 due to a change in the environment can be prevented to suppress measurement error of the thermopile 12. Furthermore, a high accuracy infrared detecting element capable of accurately detecting the temperature of cold junctions using the diodes D1 and D2 can be provided.

Abstract translation: 提供能够以低成本进行精确的温度测量的热电堆红外线检测元件。 提供了使用氮化硅膜作为构成膜部4的结构的第一结构层22的红外线检测元件1。 与氧化硅不同，第一结构层22在拉伸方向上具有内应力，因此可以防止弯曲的发生。 此外，通过使用第一结构层22作为元件隔离区域，可以在硅衬底2中形成二极管D1和D2，因此可以防止由于环境变化引起的热电堆12的变形，从而抑制了热电堆12的测量误差 此外，可以提供能够精确地检测使用二极管D1和D2的冷接点的温度的高精度红外线检测元件。

公开(公告)号：US20020179839A1

公开(公告)日：2002-12-05

申请号：US09873813

申请日：2001-06-04

Inventor： Isaac Richman

IPC: G01J005/20

CPC classification number: G01J1/02 ,  G01J1/0209 ,  G01J1/0214 ,  G01J1/04 ,  G01J1/0477 ,  G01J1/4228 ,  G01J3/02 ,  G01J3/0205 ,  G01J3/0259 ,  G01J3/0262 ,  G01J3/2803 ,  G01J3/45

Abstract: A detector array that eliminates the channel spectrum effect. In one embodiment the detector consists of a charge couple device (CCD) detector having a photoactive layer supported on a wedge-shaped substrate. Incident radiation impinging any of the pixels and passing through the substrate to the wedge-shaped surface thereof is reflected back at an angle away from the pixel from which it passed through. An infrared array and a single element detector each including a wedge-shaped substrate are also disclosed. The detectors do not require costly signal processing equipment and further can be constructed in accordance with well known manufacturing techniques and with little or no additional cost beyond that normally associated with producing such devices.

Abstract translation: 一种消除信道频谱效应的检测器阵列。 在一个实施例中，检测器由具有支撑在楔形衬底上的光敏层的电荷耦合器件（CCD）检测器组成。 射入任何像素并穿过衬底到其楔形表面的入射辐射以远离其穿过的像素的角度被反射回来。 还公开了包括楔形基板的红外阵列和单个元件检测器。 检测器不需要昂贵的信号处理设备，并且还可以根据公知的制造技术构造，并且除了通常与生产这样的设备相关联的之外，几乎没有或没有额外的成本。

公开(公告)号：US20020063214A1

公开(公告)日：2002-05-30

申请号：US09725973

申请日：2000-11-29

Applicant: Taiwan Semiconductor Manufacturing Co. Ltd.

Inventor： Yu-Kung Hsiao ,  Chih-Kung Chang ,  Fu-Tien Weng ,  Chung-Sheng Hsiung ,  Bii-Jung Chang ,  Kuo-Liang Lu

IPC: G01J005/20

CPC classification number: G01J5/08 ,  G01J5/024 ,  G01J5/0806 ,  G01J5/0862 ,  G01J5/0884 ,  H01L27/14621

Abstract: Within both a method for fabricating an optoelectronic microelectronic fabrication and the optoelectronic microelectronic fabrication fabricated in accord with the method for fabricating the optoelectronic microelectronic fabrication there is first provided a substrate having formed therein a minimum of one photoactive region which is sensitive to infrared radiation. There is also formed over the substrate and in registration with the minimum of one optically active region a minimum of one microlens layer. Similarly, there is also formed interposed between the substrate and the minimum of one microlens layer an infrared filter layer, wherein the infrared filter is not formed contacting the substrate. The method provides that the optoelectronic microelectronic fabrication is fabricated with enhanced optical sensitivity.

Abstract translation: 在制造光电子微电子制造的方法和根据制造光电微电子制造的方法制造的光电子微电子制造中，首先提供了在其中形成有至少一个对红外辐射敏感的光活性区的衬底。 还在衬底上形成最小的一个光学活性区域至少一个微透镜层。 类似地，还形成了介于基板和最小的一个微透镜层之间的红外滤光器层，其中红外滤光器不与基板接触。 该方法提供了光电微电子制造以增强的光学灵敏度制造。

公开(公告)号：US20010016094A1

公开(公告)日：2001-08-23

申请号：US09768903

申请日：2001-01-24

Inventor： Yoshiki Kuhara ,  Hiromi Nakanishi

IPC: G02B006/12 ,  G01J005/20

CPC classification number: G02B6/4246 ,  G02B6/4245 ,  G02B6/4274

Abstract: A transmitting and receiving module helps reduce electrical crosstalk and noise during transmitting and/or receiving signals. Electrical isolation among metallized electrodes in a surface-mounted module with an optical fiber and an optical device can be achieved by using a low resistivity Si substrate, providing ground terminals on the surface of the Si substrate, and grounding the Si substrate. Noise and crosstalk during transmitting and receiving signals can be reduced by providing a copper contact adhered to the bottom surface of the Si substrate and by grounding.

Abstract translation: 发射和接收模块有助于在发射和/或接收信号期间减少电气串扰和噪声。 具有光纤和光学器件的表面安装模块中的金属化电极之间的电隔离可以通过使用低电阻率Si衬底，在Si衬底的表面上提供接地端子和将衬底接地来实现。 发送和接收信号中的噪声和串扰可以通过提供粘附到Si衬底的底表面上并接地的铜触点来减少。

公开(公告)号：US20030164450A1

公开(公告)日：2003-09-04

申请号：US10240241

申请日：2003-03-24

Inventor： Rainer Bruchhaus ,  Dana Pitzer ,  Axel Schubert ,  Bernhard Winkler

IPC: G01J005/20 ,  H01L027/14 ,  H01L031/00

CPC classification number: G01J5/08 ,  G01J5/024 ,  G01J5/046 ,  G01J5/0806 ,  G01J5/0884

Abstract: The invention relates to a device for detecting thermal radiation (3), comprising at least one thermal detector element (2) that converts the thermal radiation into an electric signal (4). The inventive device is further provided with at least one focusing element (12) that focuses the thermal radiation onto the detector element. The focusing element is for example a lens that consists of a semiconducting material such a silicon. Preferably, the focusing element is integrated in the detection window for detecting the thermal radiation, said detection window consisting of a semiconducting material.

Abstract translation: 本发明涉及一种用于检测热辐射（3）的装置，包括至少一个将热辐射转换成电信号（4）的热探测元件（2）。 本发明的装置还设置有将热辐射聚焦到检测器元件上的至少一个聚焦元件（12）。 聚焦元件例如是由诸如硅的半导体材料组成的透镜。 优选地，聚焦元件集成在用于检测热辐射的检测窗口中，所述检测窗口由半导体材料组成。

公开(公告)号：US20030020018A1

公开(公告)日：2003-01-30

申请号：US10021011

申请日：2001-12-19

Inventor： Huey-Liang Hwang ,  Yeu-Long Jiang ,  Klaus Yung-Jane Hsu ,  Cho-Jen Tsai

IPC: G01J005/20

CPC classification number: H01L31/1055 ,  H01L31/11

Abstract: Amorphous silicon/amorphous silicon germanium NI1PI2N position detectors are fabricated to suppress visible light and increase detection of infrared light. The material of I1 layer is amorphous silicon or amorphous silicon germanium used to absorb visible light, and material of I2 layer is amorphous silicon germanium or amorphous germanium used to absorb infrared light. A suppression of signal due to the absorption of the visible light and amplification of signals due to absorption of the infrared light can be obtained when the NI1P diode is forward biased and the P12N diode is reverse biased. The optical band gap of the 11 and 12 layers can be controlled by the Si/Ge atomic ratio. The suppression of visible light and enhanced detection of infrared light may be tuned by controlling thickness and optical band gaps of the I1 and I2 layers. The amorphous silicon and amorphous silicon germanium layers may be deposited by square-wave modulation at 13.56 MHz.

Abstract translation: 制造非晶硅/非晶硅锗NI1PI2N位置检测器以抑制可见光并增加红外光的检测。 I1层的材料是用于吸收可见光的非晶硅或非晶硅锗，I2层的材料是用于吸收红外光的非晶硅锗或无定形锗。 当NI1P二极管正向偏置且P12N二极管反向偏置时，可以获得由于吸收可见光而导致的信号抑制和由于吸收红外光而引起的信号放大。 11和12层的光学带隙可以通过Si / Ge原子比来控制。 可以通过控制I1和I2层的厚度和光学带隙来调节对可见光的抑制和红外光的增强检测。 可以通过13.56MHz的方波调制沉积非晶硅和非晶硅锗层。

公开(公告)号：US20020190210A1

公开(公告)日：2002-12-19

申请号：US10128570

申请日：2002-04-24

Applicant: MITSUBISHI DENKI KABUSHIKI KAISHA

Inventor： Tomohiro Ishikawa ,  Hirofumi Yagi

IPC: G01J005/20

CPC classification number: G01J5/08 ,  G01J5/0853 ,  G01J5/20 ,  H01L27/14649 ,  H01L27/14687

Abstract: Disclosed are an infrared detector having a semiconductor substrate, a single crystal silicon thin film arranged and held in a hollow state at a predetermined distance above the semiconductor substrate, a plurality of thermoelectric changing means which are embedded in the single crystal silicon thin film and able to change heat energy generated by an infrared ray irradiated to the single crystal silicon thin film to an electric signal, a first connecting layer which are embedded in the single crystal silicon thin film and electrically connecting the plurality of thermoelectric changing means to each other and a second connecting layer for transmitting the electric signal outputted from the thermoelectric changing means to wire formed in the semiconductor substrate. In the infrared detector of the present invention, at least one of the first and second connecting layers is constructed by a silicon compound.

Abstract translation: 公开了一种红外线检测器，具有半导体衬底，在半导体衬底上方预定距离处于中空状态的单晶硅薄膜，嵌入在单晶硅薄膜中的多个热电变更装置， 将照射到单晶硅薄膜的红外线产生的热能改变为电信号，嵌入在单晶硅薄膜中并将多个热电变换装置彼此电连接的第一连接层和 第二连接层，用于将从热电改变装置输出的电信号传输到形成在半导体衬底中的线。 在本发明的红外检测器中，第一和第二连接层中的至少一个由硅化合物构成。