公开(公告)号：US20160108515A1

公开(公告)日：2016-04-21

申请号：US14892268

申请日：2014-05-23

Applicant: EVATEC ADVANCED TECHNOLOGIES AG

Inventor： MOHAMED ELGHAZZALI ,  Jurgen WEICHART

IPC: C23C14/34 ,  C23C14/02 ,  C23F4/00 ,  C23C14/04 ,  H01J37/34 ,  H01J37/32 ,  C23C14/06 ,  C23C14/58

CPC classification number: C23C14/34 ,  C23C14/022 ,  C23C14/046 ,  C23C14/0623 ,  C23C14/3407 ,  C23C14/5826 ,  C23C14/5873 ,  C23F4/00 ,  H01J37/32431 ,  H01J37/3429 ,  H01J37/3476

Abstract: Vias of at least approx. 1:1 aspect ratio in substrates are filled with material which exhibits a thermally driven amorphous/crystalline phase change. This is performed within a vacuum process chamber. During a first timespan the material is sputter-deposited by DC sputtering from a material target. In a subsequent timespan a void, which may remain in the via as material covered by the addressed sputtering, is opened by etching performed with the help of an inductively coupled plasma generated by an Rf driven electric coil and applying to the substrate with the via an Rf bias.

Abstract translation: 至少大约有通风口 衬底中的1：1长宽比填充有表现出热驱动的非晶/晶相变的材料。 这在真空处理室内进行。 在第一次时间段期间，材料通过DC溅射从材料靶溅射沉积。 在随后的时间段中，可以通过由寻址的溅射覆盖的材料保留在通孔中的空隙通过借助于由Rf驱动的电线圈产生的电感耦合等离子体进行的蚀刻而被打开，并且通过通孔 Rf偏差。