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    IC with fully integrated DC-to-DC power converter
    1.
    发明授权
    IC with fully integrated DC-to-DC power converter 有权
    IC具有完全集成的DC-DC电源转换器

    公开(公告)号：US07482792B2

    公开(公告)日：2009-01-27

    申请号：US11152280

    申请日：2005-06-14

    申请人： Edward Burton ,  Peter Hazucha ,  Gerhard Schrom ,  Rajesh Kumar ,  Shekhar Y. Borkar

    发明人： Edward Burton ,  Peter Hazucha ,  Gerhard Schrom ,  Rajesh Kumar ,  Shekhar Y. Borkar

    IPC分类号： G05F1/59

    CPC分类号： H02M7/003

    摘要： In general, in one aspect, the disclosure describes a semiconductor device that includes a functional circuit and a dc-to-dc power converter. The power converter converts, regulates, and filters a DC input voltage to produce a DC output voltage and provides the DC output voltage to the functional circuit. The dc-to-dc power converter has an operating frequency above 10 MHz.

    摘要翻译： 通常，在一个方面，本公开描述了一种包括功能电路和DC-DC电力转换器的半导体器件。 电源转换器转换，调节和滤波直流输入电压以产生直流输出电压，并向功能电路提供直流输出电压。 直流 - 直流功率转换器的工作频率高于10 MHz。

    Power switches having positive-channel high dielectric constant insulated gate field effect transistors
    8.
    发明授权
    Power switches having positive-channel high dielectric constant insulated gate field effect transistors 有权
    具有正通道高介电常数绝缘栅场效应晶体管的电源开关

    公开(公告)号：US07999607B2

    公开(公告)日：2011-08-16

    申请号：US12775209

    申请日：2010-05-06

    申请人： Kelin J. Kuhn ,  Richard K. Hose, Jr. ,  Edward Burton ,  Rajesh Kumar

    发明人： Kelin J. Kuhn ,  Richard K. Hose, Jr. ,  Edward Burton ,  Rajesh Kumar

    IPC分类号： G05F1/10 ,  G05F3/02

    CPC分类号： H01L27/088

    摘要： Power switch units for microelectronic devices are disclosed. In one aspect, a microelectronic device may include a functional circuit, and a power switch unit to switch power to the functional circuit on and off. The power switch unit may include a large number of transistors coupled together. The transistors may include predominantly positive-channel, insulated gate field effect transistors, which have a gate dielectric that includes a high dielectric constant material. Power switch units having such transistors may tend to have low power consumption. In an aspect, an overdrive voltage may be applied to the gates of such transistors to further reduce power consumption. Methods of overdriving such transistors and systems including such power switch units are also disclosed.

    摘要翻译： 公开了用于微电子器件的功率开关单元。 一方面，微电子器件可以包括功能电路，以及电源开关单元，用于将功率电路接通和断开。 电源开关单元可以包括耦合在一起的大量晶体管。 晶体管可以包括主要为正沟道绝缘栅场效应晶体管，其具有包括高介电常数材料的栅极电介质。 具有这种晶体管的功率开关单元倾向于具有低功耗。 在一方面，可以将过驱动电压施加到这种晶体管的栅极，以进一步降低功耗。 还公开了过载驱动这种晶体管和包括这种功率开关单元的系统的方法。

    Power Switches Having Positive-Channel High Dielectric Constant Insulated Gate Field Effect Transistors
    9.
    发明申请
    Power Switches Having Positive-Channel High Dielectric Constant Insulated Gate Field Effect Transistors 有权
    具有正通道高介质常数绝缘栅场效应晶体管的功率开关

    公开(公告)号：US20100214005A1

    公开(公告)日：2010-08-26

    申请号：US12775209

    申请日：2010-05-06

    申请人： Kelin J. Kuhn ,  Richard K. Hose, JR. ,  Edward Burton ,  Rajesh Kumar

    发明人： Kelin J. Kuhn ,  Richard K. Hose, JR. ,  Edward Burton ,  Rajesh Kumar

    IPC分类号： H03K17/687

    CPC分类号： H01L27/088

    摘要： Power switch units for microelectronic devices are disclosed. In one aspect, a microelectronic device may include a functional circuit, and a power switch unit to switch power to the functional circuit on and off. The power switch unit may include a large number of transistors coupled together. The transistors may include predominantly positive-channel, insulated gate field effect transistors, which have a gate dielectric that includes a high dielectric constant material. Power switch units having such transistors may tend to have low power consumption. In an aspect, an overdrive voltage may be applied to the gates of such transistors to further reduce power consumption. Methods of overdriving such transistors and systems including such power switch units are also disclosed.

    摘要翻译： 公开了用于微电子器件的功率开关单元。 一方面，微电子器件可以包括功能电路，以及电源开关单元，用于将功率电路接通和断开。 电源开关单元可以包括耦合在一起的大量晶体管。 晶体管可以包括主要为正沟道绝缘栅场效应晶体管，其具有包括高介电常数材料的栅极电介质。 具有这种晶体管的功率开关单元倾向于具有低功耗。 在一方面，可以将过驱动电压施加到这种晶体管的栅极，以进一步降低功耗。 还公开了过载驱动这种晶体管和包括这种功率开关单元的系统的方法。

    Power switches having positive-channel high dielectric constant insulated gate field effect transistors
    10.
    发明授权
    Power switches having positive-channel high dielectric constant insulated gate field effect transistors 有权
    具有正通道高介电常数绝缘栅场效应晶体管的电源开关

    公开(公告)号：US07737770B2

    公开(公告)日：2010-06-15

    申请号：US11394810

    申请日：2006-03-31

    申请人： Kelin J. Kuhn ,  Richard K. Hose, Jr. ,  Edward Burton ,  Rajesh Kumar

    发明人： Kelin J. Kuhn ,  Richard K. Hose, Jr. ,  Edward Burton ,  Rajesh Kumar

    IPC分类号： G05F1/10 ,  G05F3/02

    CPC分类号： H01L27/088

    摘要： Power switch units for microelectronic devices are disclosed. In one aspect, a microelectronic device may include a functional circuit, and a power switch unit to switch power to the functional circuit on and off. The power switch unit may include a large number of transistors coupled together. The transistors may include predominantly positive-channel, insulated gate field effect transistors, which have a gate dielectric that includes a high dielectric constant material. Power switch units having such transistors may tend to have low power consumption. In an aspect, an overdrive voltage may be applied to the gates of such transistors to further reduce power consumption. Methods of overdriving such transistors and systems including such power switch units are also disclosed.

    摘要翻译： 公开了用于微电子器件的功率开关单元。 一方面，微电子器件可以包括功能电路，以及电源开关单元，用于将功率电路接通和断开。 电源开关单元可以包括耦合在一起的大量晶体管。 晶体管可以包括主要为正沟道绝缘栅场效应晶体管，其具有包括高介电常数材料的栅极电介质。 具有这种晶体管的功率开关单元倾向于具有低功耗。 在一方面，可以将过驱动电压施加到这种晶体管的栅极，以进一步降低功耗。 还公开了过载驱动这种晶体管和包括这种功率开关单元的系统的方法。