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公开(公告)号：US4312936A
公开(公告)日：1982-01-26
申请号：US213989
申请日：1980-12-08
CPC分类号： G03F7/039 , G03F7/0045 , G03F7/038
摘要： Novel E-beam resists and process for their use are described. These resists are conducting organic charge transfer salts. Films of these materials can be deposited by solvent casting or by sublimation. The deposited film can be made to produce a positive or negative resist image depending on the E-beam energy and exposure time. Exposure of this material to an E-beam produces patterns having differential electrical, optical and solvation properties.
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2.发明授权
公开(公告)号：US4338392A
公开(公告)日：1982-07-06
申请号：US287662
申请日：1981-07-28
CPC分类号： G03F7/038 , G03F7/0045 , G03F7/039 , Y10S430/143
摘要： Novel E-beam resists and process for their use are described. These resists are conducting organic charge transfer salts. Films of these materials can be deposited by solvent casting or by sublimation. The deposited film can be made to produce a positive or negative resist image depending on the E-beam energy and exposure time. Exposure of this material to an E-beam produces patterns having differential electrical, optical and solvation properties.
摘要翻译： 描述了新型电子束抵抗及其使用过程。 这些抗蚀剂是导电有机电荷转移盐。 这些材料的膜可以通过溶剂浇铸或升华沉积。 可以使沉积膜根据电子束能量和曝光时间产生正或负的抗蚀剂图像。 将该材料暴露于电子束产生具有不同电学，光学和溶剂化性质的图案。
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公开(公告)号：US4312935A
公开(公告)日：1982-01-26
申请号：US213968
申请日：1980-12-08
CPC分类号： G03F7/0045 , G03F7/038 , G03F7/039
摘要： Novel E-beam resists and process for their use are described. These resists are conducting organic charge transfer salts. Films of these materials can be deposited by solvent casting or by sublimation. The deposited film can be made to produce a positive or negative resist image depending on the E-beam energy and exposure time. Exposure of this material to an E-beam produces patterns having differential electrical, optical and solvation properties.
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