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1.发明授权
公开(公告)号：US4338392A
公开(公告)日：1982-07-06
申请号：US287662
申请日：1981-07-28
CPC分类号： G03F7/038 , G03F7/0045 , G03F7/039 , Y10S430/143
摘要： Novel E-beam resists and process for their use are described. These resists are conducting organic charge transfer salts. Films of these materials can be deposited by solvent casting or by sublimation. The deposited film can be made to produce a positive or negative resist image depending on the E-beam energy and exposure time. Exposure of this material to an E-beam produces patterns having differential electrical, optical and solvation properties.
摘要翻译： 描述了新型电子束抵抗及其使用过程。 这些抗蚀剂是导电有机电荷转移盐。 这些材料的膜可以通过溶剂浇铸或升华沉积。 可以使沉积膜根据电子束能量和曝光时间产生正或负的抗蚀剂图像。 将该材料暴露于电子束产生具有不同电学，光学和溶剂化性质的图案。
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公开(公告)号：US5358899A
公开(公告)日：1994-10-25
申请号：US193968
申请日：1994-02-09
IPC分类号： H01L21/28 , H01L21/285 , H01L29/43 , H01L29/45 , H01L21/44
CPC分类号： H01L29/452 , H01L21/28575
摘要： This invention describes a low resistance contact structure to n-type GaAs and a method for making such a contact structure. The contact structure is formed by depositing successive layers of Ni, Au, Ge, and Ni. A fifth layer is then deposited on the first four layers. The fifth layer is a metallic tungsten oxide. The metallic tungsten oxide is formed by sputtering tungsten onto the 4 layer stack in a low pressure argon plus oxygen atmosphere. The resulting 5 layer stack is then annealed in a rapid thermal anneal (RTA) process. The RTA process heats the stack for 5 seconds at 600 degrees. The resulting structure consists of an intermetallic NiGe compound having a small amount of a AuGa compound dispersed within it and being covered by a metallic tungsten oxide film. The oxygen from the metallic tungsten oxide film acts as a gettering mechanism to create gallium vacancies in the GaAs lattice structure during the RTA process. The oxygen forms a compound with gallium which is sandwiched between the metallic tungsten layer and the NiGe metallurgy. The sheet resistance of the contact metallurgy is low because the metallic tungsten oxide film is substantially thicker than that required to provide oxygen for the gettering process. The contact resistance to the n-type GaAs is low because the oxygen acts in a similar fashion to gold and creates more gallium vacancies in the GaAs. These vacancies are filled with an n-type dopant (Ge), supplied by the contact metallurgy, to create a better ohmic contact. The contact structure is reliable because there is a low gold content in the contact and because the nickel stabilizes the germanium which is not used for filling the gallium vacancies in the GaAs lattice.
摘要翻译： 本发明描述了对n型GaAs的低电阻接触结构和制造这种接触结构的方法。 接触结构通过沉积Ni，Au，Ge和Ni的连续层而形成。 然后将第五层沉积在前四层上。 第五层是金属氧化钨。 通过在低压氩气和氧气气氛中将钨溅射到4层叠层上形成金属氧化钨。 然后将所得的5层堆叠在快速热退火（RTA）工艺中退火。 RTA过程以600度加热堆叠5秒钟。 所得结构由具有少量分散在其内并由金属氧化钨膜覆盖的AuGa化合物的金属间NiGe化合物组成。 来自金属氧化钨膜的氧气作为吸气机制，在RTA工艺期间产生GaAs晶格结构中的镓空位。 氧气与金属钨层和NiGe冶金之间形成与镓的化合物。 接触冶金的薄层电阻低，因为金属氧化钨薄膜比为吸气过程提供氧气所需的金属氧化物薄膜要厚。 对n型GaAs的接触电阻很低，因为氧以与金类似的方式起作用，并在GaAs中产生更多的镓空位。 这些空位填充有由接触冶金提供的n型掺杂剂（Ge），以产生更好的欧姆接触。 接触结构是可靠的，因为接触中的金含量低，并且因为镍使不稳定锗不能用于填充GaAs晶格中的镓空位。
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公开(公告)号：US5317190A
公开(公告)日：1994-05-31
申请号：US782683
申请日：1991-10-25
IPC分类号： H01L21/28 , H01L21/285 , H01L29/43 , H01L29/45 , H01L29/400
CPC分类号： H01L29/452 , H01L21/28575
摘要： This invention describes a low resistance contact structure to n-type GaAs and a method for making such a contact structure. The contact structure is formed by depositing successive layers of Ni, Au, Ge, and Ni. A fifth layer is then deposited on the first four layers. The fifth layer is a metallic tungsten oxide. The metallic tungsten oxide is formed by sputtering tungsten onto the 4 layer stack in a low pressure argon plus oxygen atmosphere. The resulting 5 layer stack is then annealed in a rapid thermal anneal (RTA) process. The RTA process heats the stack for 5 seconds at 600 degrees. The resulting structure consists of an intermetallic NiGe compound having a small amount of a AuGa compound dispersed within it and being covered by a metallic tungsten oxide film. The oxygen from the metallic tungsten oxide film acts as a gettering mechanism to create gallium vacancies in the GaAs lattice structure during the RTA process. The oxygen forms a compound with gallium which is sandwiched between the metallic tungsten layer and the NiGe metallurgy. The sheet resistance of the contact metallurgy is low because the metallic tungsten oxide film is substantially thicker than that required to provide oxygen for the gettering process. The contact resistance to the n-type GaAs is low because the oxygen acts in a similar fashion to gold and creates more gallium vacancies in the GaAs. These vacancies are filled with an n-type dopant (Ge), supplied by the contact metallurgy, to create a better ohmic contact. The contact structure is reliable because there is a low gold content in the contact and because the nickel stabilizes the germanium which is not used for filling the gallium vacancies in the GaAs lattice.
摘要翻译： 本发明描述了对n型GaAs的低电阻接触结构和制造这种接触结构的方法。 接触结构通过沉积Ni，Au，Ge和Ni的连续层而形成。 然后将第五层沉积在前四层上。 第五层是金属氧化钨。 通过在低压氩气和氧气气氛中将钨溅射到4层叠层上形成金属氧化钨。 然后将所得的5层堆叠在快速热退火（RTA）工艺中退火。 RTA过程以600度加热堆叠5秒钟。 所得结构由具有少量分散在其内并由金属氧化钨膜覆盖的AuGa化合物的金属间NiGe化合物组成。 来自金属氧化钨膜的氧气作为吸气机制，在RTA工艺期间产生GaAs晶格结构中的镓空位。 氧气与金属钨层和NiGe冶金之间形成与镓的化合物。 接触冶金的薄层电阻低，因为金属氧化钨薄膜比为吸气过程提供氧气所需的金属氧化物薄膜要厚。 对n型GaAs的接触电阻很低，因为氧以与金类似的方式起作用，并在GaAs中产生更多的镓空位。 这些空位填充有由接触冶金提供的n型掺杂剂（Ge），以产生更好的欧姆接触。 接触结构是可靠的，因为接触中的金含量低，并且因为镍使不稳定锗不能用于填充GaAs晶格中的镓空位。
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公开(公告)号：US4312936A
公开(公告)日：1982-01-26
申请号：US213989
申请日：1980-12-08
CPC分类号： G03F7/039 , G03F7/0045 , G03F7/038
摘要： Novel E-beam resists and process for their use are described. These resists are conducting organic charge transfer salts. Films of these materials can be deposited by solvent casting or by sublimation. The deposited film can be made to produce a positive or negative resist image depending on the E-beam energy and exposure time. Exposure of this material to an E-beam produces patterns having differential electrical, optical and solvation properties.
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公开(公告)号：US4312935A
公开(公告)日：1982-01-26
申请号：US213968
申请日：1980-12-08
CPC分类号： G03F7/0045 , G03F7/038 , G03F7/039
摘要： Novel E-beam resists and process for their use are described. These resists are conducting organic charge transfer salts. Films of these materials can be deposited by solvent casting or by sublimation. The deposited film can be made to produce a positive or negative resist image depending on the E-beam energy and exposure time. Exposure of this material to an E-beam produces patterns having differential electrical, optical and solvation properties.
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