摘要:
Provided herein are embodiments of a three-dimensional bicontinuous heterostructure, a method of producing same, and the application of this structure. The three-dimensional bicontinuous heterostructure includes two interpenetrating layers which are spatially continuous, include only protrusions or peninsulas, and have no islands. The method of producing the three-dimensional bicontinuous heterostructure includes forming an essentially planar continuous bottom layer of a first material; forming a layer of this first material on top of the bottom layer that is textured to produce protrusions for subsequent interpenetration with a second material, coating this second material onto this structure, and forming a coating with the second material that ensures that only the second material is contacted by subsequent layer. One of the materials includes visible and/or infrared-absorbing semiconducting quantum dot nanoparticles, and one of materials is a hole conductor and the other is an electron conductor.
摘要:
The present invention provides of a three-dimensional bicontinuous heterostructure, a method of producing same, and the application of this structure towards the realization of photodetecting and photovoltaic devices working in the visible and the near-infrared. The three-dimensional bicontinuous heterostructure includes two interpenetrating layers which are spatially continuous, they are include only protrusions or peninsulas, and no islands. The method of producing the three-dimensional biontinuous heterostructure relies on forming an essentially planar continuous bottom layer of a first material; forming a layer of this first material on top of the bottom layer which is textured to produce protrusions for subsequent interpenetration with a second material, coating this second material onto this structure; and forming a final coating with the second material that ensures that only the second material is contacted by subsequent layer. One of the materials includes visible and/or infrared-absorbing semiconducting quantum dot nanoparticles, and one of materials is a hole conductor and the other is an electron conductor.
摘要:
The present invention provides of a three-dimensional bicontinuous heterostructure, a method of producing same, and the application of this structure towards the realization of photodetecting and photovoltaic devices working in the visible and the near-infrared. The three-dimensional bicontinuous heterostructure includes two interpenetrating layers which are spatially continuous, they are include only protrusions or peninsulas, and no islands. The method of producing the three-dimensional bicontinuous heterostructure relies on forming an essentially planar continuous bottom layer of a first material; forming a layer of this first material on top of the bottom layer which is textured to produce protrusions for subsequent interpenetration with a second material, coating this second material onto this structure; and forming a final coating with the second material that ensures that only the second material is contacted by subsequent layer. One of the materials includes visible and/or infrared-absorbing semiconducting quantum dot nanoparticles, and one of materials is a hole conductor and the other is an electron conductor.
摘要:
Provided herein are embodiments of a three-dimensional bicontinuous heterostructure, a method of producing same, and the application of this structure. The three-dimensional bicontinuous heterostructure includes two interpenetrating layers which are spatially continuous, include only protrusions or peninsulas, and have no islands. The method of producing the three-dimensional bicontinuous heterostructure includes forming an essentially planar continuous bottom layer of a first material; forming a layer of this first material on top of the bottom layer that is textured to produce protrusions for subsequent interpenetration with a second material, coating this second material onto this structure, and forming a coating with the second material that ensures that only the second material is contacted by subsequent layer. One of the materials includes visible and/or infrared-absorbing semiconducting quantum dot nanoparticles, and one of materials is a hole conductor and the other is an electron conductor.