公开(公告)号：US20060243959A1

公开(公告)日：2006-11-02

申请号：US11327655

申请日：2006-01-09

申请人： Edward Sargent ,  Steve McDonald ,  Shiguo Zhang ,  Larissa Levina ,  Gerasimos Konstantatos ,  Paul Cyr

发明人： Edward Sargent ,  Steve McDonald ,  Shiguo Zhang ,  Larissa Levina ,  Gerasimos Konstantatos ,  Paul Cyr

IPC分类号： H01L31/00

CPC分类号： H01L51/4213 ,  B82Y10/00 ,  B82Y40/00 ,  H01L21/02543 ,  H01L21/0256 ,  H01L21/02568 ,  H01L21/02601 ,  H01L27/305 ,  H01L31/0352 ,  H01L51/0038 ,  H01L51/0545 ,  H01L51/0566 ,  H01L51/4253 ,  H01L51/426 ,  Y02E10/549 ,  Y02P70/521 ,  Y10S977/773 ,  Y10S977/774 ,  Y10S977/783 ,  Y10S977/784 ,  Y10S977/954

摘要： The present invention provides of a three-dimensional bicontinuous heterostructure, a method of producing same, and the application of this structure towards the realization of photodetecting and photovoltaic devices working in the visible and the near-infrared. The three-dimensional bicontinuous heterostructure includes two interpenetrating layers which are spatially continuous, they are include only protrusions or peninsulas, and no islands. The method of producing the three-dimensional biontinuous heterostructure relies on forming an essentially planar continuous bottom layer of a first material; forming a layer of this first material on top of the bottom layer which is textured to produce protrusions for subsequent interpenetration with a second material, coating this second material onto this structure; and forming a final coating with the second material that ensures that only the second material is contacted by subsequent layer. One of the materials includes visible and/or infrared-absorbing semiconducting quantum dot nanoparticles, and one of materials is a hole conductor and the other is an electron conductor.

摘要翻译： 本发明提供三维双连续异质结构，其制造方法，以及该结构在实现可见光和近红外线中的光电检测和光电器件的应用。 三维双连续异质结构包括空间连续的两个互穿层，它们仅包括突起或半岛，并且不包括岛。 制造三维双连续异质结构的方法依赖于形成第一材料的基本上平面的连续底层; 在所述底层的顶部上形成所述第一材料的层，所述层被纹理化以产生用于随后与第二材料相互渗透的突起，将所述第二材料涂覆到所述结构上; 并用第二材料形成最后的涂层，确保只有第二材料与后续层接触。 其中一种材料包括可见和/或红外吸收半导体量子点纳米颗粒，其中一种材料是空穴导体，另一种是电子导体。

公开(公告)号：US08115232B2

公开(公告)日：2012-02-14

申请号：US11327655

申请日：2006-01-09

申请人： Edward Sargent ,  Steve McDonald ,  Shiguo Zhang ,  Larissa Levina ,  Gerasimos Konstantatos ,  Paul Cyr

发明人： Edward Sargent ,  Steve McDonald ,  Shiguo Zhang ,  Larissa Levina ,  Gerasimos Konstantatos ,  Paul Cyr

IPC分类号： H01L31/109

CPC分类号： H01L51/4213 ,  B82Y10/00 ,  B82Y40/00 ,  H01L21/02543 ,  H01L21/0256 ,  H01L21/02568 ,  H01L21/02601 ,  H01L27/305 ,  H01L31/0352 ,  H01L51/0038 ,  H01L51/0545 ,  H01L51/0566 ,  H01L51/4253 ,  H01L51/426 ,  Y02E10/549 ,  Y02P70/521 ,  Y10S977/773 ,  Y10S977/774 ,  Y10S977/783 ,  Y10S977/784 ,  Y10S977/954

摘要： The present invention provides of a three-dimensional bicontinuous heterostructure, a method of producing same, and the application of this structure towards the realization of photodetecting and photovoltaic devices working in the visible and the near-infrared. The three-dimensional bicontinuous heterostructure includes two interpenetrating layers which are spatially continuous, they are include only protrusions or peninsulas, and no islands. The method of producing the three-dimensional bicontinuous heterostructure relies on forming an essentially planar continuous bottom layer of a first material; forming a layer of this first material on top of the bottom layer which is textured to produce protrusions for subsequent interpenetration with a second material, coating this second material onto this structure; and forming a final coating with the second material that ensures that only the second material is contacted by subsequent layer. One of the materials includes visible and/or infrared-absorbing semiconducting quantum dot nanoparticles, and one of materials is a hole conductor and the other is an electron conductor.

摘要翻译： 本发明提供三维双连续异质结构，其制造方法，以及该结构在实现可见光和近红外线中的光电检测和光电器件的应用。 三维双连续异质结构包括空间连续的两个互穿层，它们仅包括突起或半岛，并且不包括岛。 制造三维双连续异质结构的方法依赖于形成第一材料的基本上平面的连续底层; 在所述底层的顶部上形成所述第一材料的层，所述层被纹理化以产生用于随后与第二材料相互渗透的突起，将所述第二材料涂覆到所述结构上; 并用第二材料形成最后的涂层，确保只有第二材料与后续层接触。 其中一种材料包括可见和/或红外吸收半导体量子点纳米颗粒，其中一种材料是空穴导体，另一种是电子导体。

公开(公告)号：US08450138B2

公开(公告)日：2013-05-28

申请号：US13368747

申请日：2012-02-08

申请人： Edward Sargent ,  Steven Ashworth McDonald ,  Shiguo Zhang ,  Larissa Levina ,  Gerasimos Konstantatos ,  Paul Cyr

发明人： Edward Sargent ,  Steven Ashworth McDonald ,  Shiguo Zhang ,  Larissa Levina ,  Gerasimos Konstantatos ,  Paul Cyr

IPC分类号： H01L21/00 ,  H01L31/00

CPC分类号： H01L51/4213 ,  B82Y10/00 ,  B82Y40/00 ,  H01L21/02543 ,  H01L21/0256 ,  H01L21/02568 ,  H01L21/02601 ,  H01L27/305 ,  H01L31/0352 ,  H01L51/0038 ,  H01L51/0545 ,  H01L51/0566 ,  H01L51/4253 ,  H01L51/426 ,  Y02E10/549 ,  Y02P70/521 ,  Y10S977/773 ,  Y10S977/774 ,  Y10S977/783 ,  Y10S977/784 ,  Y10S977/954

摘要： Provided herein are embodiments of a three-dimensional bicontinuous heterostructure, a method of producing same, and the application of this structure. The three-dimensional bicontinuous heterostructure includes two interpenetrating layers which are spatially continuous, include only protrusions or peninsulas, and have no islands. The method of producing the three-dimensional bicontinuous heterostructure includes forming an essentially planar continuous bottom layer of a first material; forming a layer of this first material on top of the bottom layer that is textured to produce protrusions for subsequent interpenetration with a second material, coating this second material onto this structure, and forming a coating with the second material that ensures that only the second material is contacted by subsequent layer. One of the materials includes visible and/or infrared-absorbing semiconducting quantum dot nanoparticles, and one of materials is a hole conductor and the other is an electron conductor.

摘要翻译： 本文提供了三维双连续异质结构的实施方案，其制备方法以及该结构的应用。 三维双连续异质结构包括空间连续的两个互穿层，仅包括突起或半岛，并且没有岛。 制造三维双连续异质结构的方法包括形成第一材料的基本上平面的连续底层; 在底层的顶部上形成第一材料层，该层被纹理化以产生用于随后与第二材料相互渗透的突出物，将该第二材料涂覆到该结构上，以及形成具有第二材料的涂层，其确保只有第二材料 被后续层接触。 其中一种材料包括可见和/或红外吸收半导体量子点纳米颗粒，其中一种材料是空穴导体，另一种是电子导体。

公开(公告)号：US08338634B2

公开(公告)日：2012-12-25

申请号：US12918848

申请日：2009-02-13

申请人： Youquan Deng ,  Yubo Ma ,  Liguo Wang ,  Xiaoguang Guo ,  Shiguo Zhang ,  Yude He ,  Stefan Wershofen ,  Stephan Klein ,  Zhiping Zhou

发明人： Youquan Deng ,  Yubo Ma ,  Liguo Wang ,  Xiaoguang Guo ,  Shiguo Zhang ,  Yude He ,  Stefan Wershofen ,  Stephan Klein ,  Zhiping Zhou

IPC分类号： C07C261/00 ,  C07C269/00 ,  C07C271/00 ,  B01J23/00 ,  B01J21/00

CPC分类号： B01J23/866 ,  B01J21/063 ,  B01J21/08 ,  B01J23/26 ,  B01J35/002 ,  B01J35/0026 ,  B01J35/023 ,  B01J35/1023 ,  B01J35/1038 ,  B01J37/0203 ,  C07C269/00 ,  C07C271/12

摘要： The present invention pertains to a catalyst for the synthesis of organic alkyl carbamates, the method for preparing the same and the use thereof. The catalyst comprises a catalytically active component and a catalyst support, and the catalytically active component being carried by the catalyst support, wherein the catalytically active component comprises a transition metal oxide, and the general formula of the transition metal oxide is EOx, wherein E is selected from transition metal element and x is in the range of 0.5-4.

摘要翻译： 本发明涉及合成有机氨基甲酸烷基酯的催化剂，其制备方法及其应用。 催化剂包含催化活性组分和催化剂载体，催化活性组分由催化剂载体承载，其中催化活性组分包含过渡金属氧化物，并且过渡金属氧化物的通式为EOx，其中E为 从过渡金属元素中选择，x在0.5-4的范围内。

公开(公告)号：US08569889B1

公开(公告)日：2013-10-29

申请号：US13024219

申请日：2011-02-09

申请人： Shiguo Zhang ,  Sandrio Elim ,  Ling Bao

发明人： Shiguo Zhang ,  Sandrio Elim ,  Ling Bao

IPC分类号： H01L23/485

CPC分类号： H01L24/03 ,  H01L24/05 ,  H01L2224/0345 ,  H01L2224/03848 ,  H01L2224/05083 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/05644 ,  H01S5/022 ,  H01S5/0425 ,  H01L2924/00014 ,  H01L2924/00012

摘要： A metallization layer for a semiconductor device includes a first layer made of Pt and having a thickness greater than or equal to 15 Å and less than or equal to 50 Å, and a second layer formed on the first layer and made of a plurality of metallic sub-layers such as Ti/Pt/Au. A semiconductor device fabricated from the metallization layer includes a semiconductor substrate having a top layer and mesa structure and corresponding surface for securing an insulating layer and a corresponding exposed surface, and wherein the metallization layer is deposited over the insulating layer and exposed surface. Methods for forming the metallization layer are also disclosed.

摘要翻译： 用于半导体器件的金属化层包括由Pt制成并具有大于或等于并且小于或等于50的厚度的第一层，以及形成在第一层上并由多个金属制成的第二层 子层如Ti / Pt / Au。 由金属化层制造的半导体器件包括具有顶层和台面结构的半导体衬底和用于固定绝缘层和相应的暴露表面的相应表面，并且其中金属化层沉积在绝缘层和暴露表面上。 还公开了形成金属化层的方法。