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1.发明授权Active modulation of quantum well lasers by energy shifts in gain spectra with applied electric field 失效通过施加电场的增益谱中的能量偏移来量子阱激光器的有源调制
公开(公告)号：US4700353A
公开(公告)日：1987-10-13
申请号：US764704
申请日：1985-08-12
CPC分类号： B82Y20/00 , H01S5/06203 , H01S5/0687 , H01S5/34 , H01S5/0425 , H01S5/0614
摘要： Modulation of a semiconductor laser device is achieved at microwave frequencies by the application of transverse fields which produce energy shifts in the gain spectra of the laser device. The laser device is a PN diode which has a body portion constructed from a nonconductive material, with P and N type implants on opposite sides. The P and N implants define a transition region, or layer, on the order of 1 micron in width, in which is formed a quantum well having a thickness on the order of 50 to 100 Angstroms. Application of a bias voltage across the PN junction provides lasing of the device. An electrode on the surface of the transition layer allows application of a transverse electric field to the PN junction. This transverse field quenches the lasing of the device, to provide modulation of the laser. Quenching is produced by means of energy shifts in the gain spectra of the laser device, and since current flow through the PN junction is inhibited by the nonconductive material and thus flows primarily in the quantum wells, modulation of the current is possible at microwave frequencies at relatively low power levels.
摘要翻译： 半导体激光器件的调制是通过应用横向磁场在微波频率上实现的，其产生激光装置的增益谱中的能量偏移。 激光装置是PN二极管，其具有由非导电材料构成的主体部分，在相对侧上具有P型和N型植入物。 P和N植入物限定了宽度为1微米量级的过渡区域或层，其中形成厚度为50至100埃的量子阱。 在PN结上施加偏置电压可以提供器件的激光。 在过渡层的表面上的电极允许向PN结施加横向电场。 该横向场淬灭器件的激光，以提供激光器的调制。 淬火是通过激光器件的增益谱中的能量偏移产生的，并且由于通过PN结的电流被非导电材料抑制，因此主要在量子阱中流动，所以在微波频率处可以调制电流 功率水平相对较低
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