公开(公告)号：US4700353A

公开(公告)日：1987-10-13

申请号：US764704

申请日：1985-08-12

申请人： Edward Van Gieson ,  Gary W. Wicks ,  Eric Elias ,  Lester F. Eastman

发明人： Edward Van Gieson ,  Gary W. Wicks ,  Eric Elias ,  Lester F. Eastman

IPC分类号： H01S5/042 ,  H01S5/062 ,  H01S5/0687 ,  H01S5/34 ,  H01S3/10 ,  H01S3/19

CPC分类号： B82Y20/00 ,  H01S5/06203 ,  H01S5/0687 ,  H01S5/34 ,  H01S5/0425 ,  H01S5/0614

摘要： Modulation of a semiconductor laser device is achieved at microwave frequencies by the application of transverse fields which produce energy shifts in the gain spectra of the laser device. The laser device is a PN diode which has a body portion constructed from a nonconductive material, with P and N type implants on opposite sides. The P and N implants define a transition region, or layer, on the order of 1 micron in width, in which is formed a quantum well having a thickness on the order of 50 to 100 Angstroms. Application of a bias voltage across the PN junction provides lasing of the device. An electrode on the surface of the transition layer allows application of a transverse electric field to the PN junction. This transverse field quenches the lasing of the device, to provide modulation of the laser. Quenching is produced by means of energy shifts in the gain spectra of the laser device, and since current flow through the PN junction is inhibited by the nonconductive material and thus flows primarily in the quantum wells, modulation of the current is possible at microwave frequencies at relatively low power levels.

摘要翻译： 半导体激光器件的调制是通过应用横向磁场在微波频率上实现的，其产生激光装置的增益谱中的能量偏移。 激光装置是PN二极管，其具有由非导电材料构成的主体部分，在相对侧上具有P型和N型植入物。 P和N植入物限定了宽度为1微米量级的过渡区域或层，其中形成厚度为50至100埃的量子阱。 在PN结上施加偏置电压可以提供器件的激光。 在过渡层的表面上的电极允许向PN结施加横向电场。 该横向场淬灭器件的激光，以提供激光器的调制。 淬火是通过激光器件的增益谱中的能量偏移产生的，并且由于通过PN结的电流被非导电材料抑制，因此主要在量子阱中流动，所以在微波频率处可以调制电流 功率水平相对较低

公开(公告)号：US20100230720A1

公开(公告)日：2010-09-16

申请号：US12706016

申请日：2010-02-16

申请人： Gary W. Wicks

发明人： Gary W. Wicks

IPC分类号： H01L31/102 ,  H01L21/02

CPC分类号： H01L31/1032 ,  B82Y20/00 ,  H01L31/035281 ,  H01L31/1035 ,  Y02E10/50

摘要： The present invention is directed to a semiconductor device that includes at least one p-n junction including a p-type material, an n-type material, and a depletion region. The at least one p-n junction is configured to generate bulk photocurrent in response to incident light. The at least one p-n junction is characterized by a conduction band energy level, a valence band energy level and a surface Fermi energy level. The surface Fermi energy level is pinned either near or above the conduction band energy level or near or below the valence band energy level. A unipolar barrier structure is disposed in a predetermined region within the at least one p-n junction. The unipolar barrier is configured to raise the conduction band energy level if the surface Fermi energy level is pinned near or above the conduction band energy level or lower the valence band energy level if the surface Fermi energy level is pinned near or below the valence band energy level such that the unipolar barrier is configured to propagate the bulk photocurrent and substantially block surface leakage current. The at least one p-n junction and the unipolar barrier are integrally formed.

摘要翻译： 本发明涉及包括至少一个包括p型材料，n型材料和耗尽区的p-n结的半导体器件。 至少一个p-n结被配置为响应于入射光而产生体光电流。 所述至少一个p-n结的特征在于导带能级，价带能级和表面费米能级。 表面费米能级被固定在接近或高于导带能级或接近或低于价带能级。 单极屏障结构设置在至少一个p-n结内的预定区域中。 如果表面费米能级被固定在接近或高于导带能量水平的情况下，单极屏障被配置为提高导带能级，或者如果表面费米能级被固定在价带能量附近或之下 电平，使得单极势垒被配置为传播本体光电流并且基本上阻挡表面泄漏电流。 至少一个p-n结和单极屏障是一体形成的。

公开(公告)号：US08274096B2

公开(公告)日：2012-09-25

申请号：US12706016

申请日：2010-02-16

申请人： Gary W. Wicks

发明人： Gary W. Wicks

IPC分类号： H01L31/102

CPC分类号： H01L31/1032 ,  B82Y20/00 ,  H01L31/035281 ,  H01L31/1035 ,  Y02E10/50

摘要： The present invention is directed to a semiconductor device that includes at least one p-n junction including a p-type material, an n-type material, and a depletion region. The at least one p-n junction is configured to generate bulk photocurrent in response to incident light. The at least one p-n junction is characterized by a conduction band energy level, a valence band energy level and a surface Fermi energy level. The surface Fermi energy level is pinned either near or above the conduction band energy level or near or below the valence band energy level. A unipolar barrier structure is disposed in a predetermined region within the at least one p-n junction. The unipolar barrier is configured to raise the conduction band energy level if the surface Fermi energy level is pinned near or above the conduction band energy level or lower the valence band energy level if the surface Fermi energy level is pinned near or below the valence band energy level such that the unipolar barrier is configured to propagate the bulk photocurrent and substantially block surface leakage current. The at least one p-n junction and the unipolar barrier are integrally formed.

摘要翻译： 本发明涉及包括至少一个包括p型材料，n型材料和耗尽区的p-n结的半导体器件。 至少一个p-n结被配置为响应于入射光而产生体光电流。 所述至少一个p-n结的特征在于导带能级，价带能级和表面费米能级。 表面费米能级被固定在接近或高于导带能级或接近或低于价带能级。 单极屏障结构设置在至少一个p-n结内的预定区域中。 如果表面费米能级被固定在接近或高于导带能量水平的情况下，单极屏障被配置为提高导带能级，或者如果表面费米能级被固定在价带能量附近或之下 电平，使得单极势垒被配置为传播本体光电流并且基本上阻挡表面泄漏电流。 至少一个p-n结和单极屏障是一体形成的。