公开(公告)号：US4649405A

公开(公告)日：1987-03-10

申请号：US598755

申请日：1984-04-10

申请人： Lester F. Eastman

发明人： Lester F. Eastman

IPC分类号： H01L29/36 ,  H01L29/864 ,  H01L47/02 ,  H01L29/88 ,  H01L29/20 ,  H01L29/86

CPC分类号： H01L47/026 ,  H01L29/365 ,  H01L29/864

摘要： A high frequency transferred electron device having electron ballistic injection and extraction for very high efficiency is disclosed. The device comprises a semiconductor body having at least two electrodes with a thin barrier layer being formed at one electrode for launching ballistic electrons at a controlled kinetic energy into the body. The body includes a drift region having a low, controlled density of electrons and impurities. A second heavily doped (N+) collector semiconductor layer at the second electrode insures that there is no barrier at the second electrode interface, thereby allowing energetic electrons to be removed from the drift region and allowing entry of new ballistic electrons to improve the efficiency and frequency response of the device.

摘要翻译： 公开了具有非常高效率的电子弹注射和提取的高频转移电子器件。 该装置包括具有至少两个电极的半导体本体，该电极具有薄的阻挡层，该电极在一个电极处形成，用于以受控的动能向身体发射弹道电子。 身体包括具有低的受控密度的电子和杂质的漂移区域。 在第二电极处的第二重掺杂（N +）集电极半导体层确保在第二电极界面处不存在阻挡层，从而允许从漂移区域去除高能电子，并允许新的弹道电子进入以提高效率和频率 设备响应。

公开(公告)号：US4398963A

公开(公告)日：1983-08-16

申请号：US208596

申请日：1980-11-19

申请人： Richard A. Stall ,  Colin E. C. Wood ,  Lester F. Eastman

发明人： Richard A. Stall ,  Colin E. C. Wood ,  Lester F. Eastman

IPC分类号： H01L21/285 ,  H01L29/45 ,  H01L21/265 ,  H01L7/54 ,  H01L23/48

CPC分类号： H01L29/452 ,  H01L21/28575

摘要： Ultra low resistance heterojunction ohmic contacts to semiconductors such gallium arsenide (GaAs) is described wherein a single crystal layer of germanium degenerately doped with arsenic is deposited on gallium arsenide using molecular-beam epitaxy (MBE). A metallic film is then deposited over the single crystal layer of heavily doped germanium so as to obtain a non-alloyed heterojunction ohmic contact having a very low specific resistance.

摘要翻译： 描述了与半导体（例如砷化镓（GaAs））的超低电阻异质结欧姆接触，其中使用分子束外延（MBE）将简并掺杂有砷的锗的单晶层沉积在砷化镓上。 然后将金属膜沉积在重掺杂锗的单晶层上，以获得具有非常低的电阻率的非合金异质结欧姆接触。

公开(公告)号：US4728616A

公开(公告)日：1988-03-01

申请号：US16893

申请日：1987-02-20

申请人： David G. Ankri ,  Lester F. Eastman ,  Walter H. Ku

发明人： David G. Ankri ,  Lester F. Eastman ,  Walter H. Ku

IPC分类号： H01L29/737 ,  H01L21/22 ,  H01L21/26 ,  H01L29/205

CPC分类号： H01L29/7376 ,  H01L29/7371 ,  Y10S148/072 ,  Y10S148/084 ,  Y10S438/912

摘要： A heterojunction transistor doped to form a specially-shaped emitter-base conduction band step or spike is disclosed. The potential barrier is then utilized to accelerate electrons across the base region at the maximum velocity obtainable without scattering electrons to the upper valleys. In this manner the electrons may be transported across the base region virtually without collisions and at a velocity approximately 10 times that of normal electron diffusion across the base region, thus increasing the frequence response of the transistor.

摘要翻译： 公开了掺杂以形成特殊形状的发射极 - 基极导带台阶或尖峰的异质结晶体管。 然后利用势垒以可获得的最大速度跨越基极区加速电子，而不将电子散射到上部谷。 以这种方式，电子可以实际上不经过碰撞而以基本区域传输，并且速度约为穿过基极区域的正常电子扩散的10倍，从而增加晶体管的频率响应。

公开(公告)号：US4700353A

公开(公告)日：1987-10-13

申请号：US764704

申请日：1985-08-12

申请人： Edward Van Gieson ,  Gary W. Wicks ,  Eric Elias ,  Lester F. Eastman

发明人： Edward Van Gieson ,  Gary W. Wicks ,  Eric Elias ,  Lester F. Eastman

IPC分类号： H01S5/042 ,  H01S5/062 ,  H01S5/0687 ,  H01S5/34 ,  H01S3/10 ,  H01S3/19

CPC分类号： B82Y20/00 ,  H01S5/06203 ,  H01S5/0687 ,  H01S5/34 ,  H01S5/0425 ,  H01S5/0614

摘要： Modulation of a semiconductor laser device is achieved at microwave frequencies by the application of transverse fields which produce energy shifts in the gain spectra of the laser device. The laser device is a PN diode which has a body portion constructed from a nonconductive material, with P and N type implants on opposite sides. The P and N implants define a transition region, or layer, on the order of 1 micron in width, in which is formed a quantum well having a thickness on the order of 50 to 100 Angstroms. Application of a bias voltage across the PN junction provides lasing of the device. An electrode on the surface of the transition layer allows application of a transverse electric field to the PN junction. This transverse field quenches the lasing of the device, to provide modulation of the laser. Quenching is produced by means of energy shifts in the gain spectra of the laser device, and since current flow through the PN junction is inhibited by the nonconductive material and thus flows primarily in the quantum wells, modulation of the current is possible at microwave frequencies at relatively low power levels.

摘要翻译： 半导体激光器件的调制是通过应用横向磁场在微波频率上实现的，其产生激光装置的增益谱中的能量偏移。 激光装置是PN二极管，其具有由非导电材料构成的主体部分，在相对侧上具有P型和N型植入物。 P和N植入物限定了宽度为1微米量级的过渡区域或层，其中形成厚度为50至100埃的量子阱。 在PN结上施加偏置电压可以提供器件的激光。 在过渡层的表面上的电极允许向PN结施加横向电场。 该横向场淬灭器件的激光，以提供激光器的调制。 淬火是通过激光器件的增益谱中的能量偏移产生的，并且由于通过PN结的电流被非导电材料抑制，因此主要在量子阱中流动，所以在微波频率处可以调制电流 功率水平相对较低

公开(公告)号：US4564509A

公开(公告)日：1986-01-14

申请号：US509871

申请日：1983-06-30

申请人： James R. Shealy ,  Lester F. Eastman

发明人： James R. Shealy ,  Lester F. Eastman

IPC分类号： B01D53/18 ,  B01D53/26 ,  B01J10/00 ,  C01B3/52 ,  C01B6/06 ,  C01B6/10 ,  C01B6/34 ,  C01B7/07 ,  C01B17/16 ,  C01B17/45 ,  C01B19/00 ,  C01B19/04 ,  C01B21/04 ,  C01B25/06 ,  C01B25/10 ,  C01B33/04 ,  C01B33/107 ,  C01B35/06 ,  C01C1/02 ,  C01G19/08 ,  C01G28/00 ,  C07F5/00 ,  C30B25/02 ,  B01D47/02

CPC分类号： C30B25/02 ,  C01B17/168 ,  C01B19/00 ,  C01B19/04 ,  C01B21/0411 ,  C01B25/06 ,  C01B25/10 ,  C01B3/52 ,  C01B33/046 ,  C01B33/10778 ,  C01B35/061 ,  C01B6/06 ,  C01B6/065 ,  C01B6/10 ,  C01B6/34 ,  C01B7/07 ,  C01B7/0706 ,  C01B7/0743 ,  C01C1/024 ,  C01G19/08 ,  C01G28/007 ,  C07F5/00 ,  C01B2203/0415 ,  C01B2203/0465 ,  C01B2203/0495 ,  C01B2210/0043 ,  C01P2002/84 ,  C01P2006/80

摘要： A method of removing oxygen and water vapor and other oxygen bearing gas species from reactant gases comprising the use of an appropriate solution containing an active gettering metal, selected from the group of aluminum, magnesium, calcium and lithium in liquid phase through a moderate temperature range, including room temperature and above as an oxygen gettering step, through the formation of an oxide of said metal wherein the said metal becomes continuously available for oxidation by exposing the said unreacted metal to the gas by bubbling the reactant gas through a ternary melt of gallium-indium and the said metal in a nonreactive container and maintaining in solid phase an excess of the active gettering method so that the capacity for removing the oxygen and water vapor and other oxygen bearing gas species may be extended by the active metal going into solution in the melt from the solid as the metal oxide is formed and goes out of solution.

摘要翻译： 一种从反应气体中除去氧气和水蒸汽等含氧气体物质的方法，包括使用含有选自铝，镁，钙和锂的活性吸气金属的合适溶液，液相中的中等温度范围 ，包括室温以上作为吸氧步骤，通过形成所述金属的氧化物，其中所述金属通过将反应气体鼓泡通过镓的三元熔体而使所述未反应的金属暴露于气体中而连续可用于氧化 所述金属在非反应性容器中并保持固相过量的主动吸气方法，使得除去氧气和水蒸汽等含氧气体物质的能力可以通过进入溶液中的活性金属来延长 形成作为金属氧化物的固体的熔体，并从溶液中脱出。

公开(公告)号：US4672404A

公开(公告)日：1987-06-09

申请号：US771169

申请日：1985-09-03

申请人： David G. Ankri ,  Lester F. Eastman ,  Walter H. Ku

发明人： David G. Ankri ,  Lester F. Eastman ,  Walter H. Ku

IPC分类号： H01L29/737 ,  H01L29/76 ,  H01L27/12 ,  H01L29/161 ,  H01L29/72

CPC分类号： H01L29/7376 ,  H01L29/7606

摘要： A heterojunction transistor doped to form a specially-shaped emitter-base conduction band step or spike is disclosed. The potential barrier is then utilized to accelerate electrons across the base region at the maximum velocity obtainable without scattering electrons to the upper valleys. In this manner the electrons bay be transported across the base region virtually without collisions and at a velocity approximately 10 times that of normal electron diffusion across the base region, thus increasing the frequence response of the transistor.

摘要翻译： 公开了掺杂以形成特殊形状的发射极 - 基极导带台阶或尖峰的异质结晶体管。 然后利用势垒以可获得的最大速度跨越基极区加速电子，而不将电子散射到上部谷。 以这种方式，电子间隔实际上不经过碰撞而以基本区域的方式传输穿过基极区域，并以大约正常电子扩散穿过基极区域的速度的10倍的速度传输，从而增加晶体管的频率响应。