摘要:
A sensing circuit having a first substrate, a second substrate, a layer of dielectric material, a first electrode, a second electrode and an electrostatic capacitance detection unit is provided. The second substrate faces the first substrate. The dielectric material is held between the first substrate and the second substrate. The first electrode and the second electrode are arranged between the dielectric material and the first substrate. The electrostatic capacitance detection unit is configured to produce a detection signal having an amplitude according to a value of capacitance formed between the first electrode and the second electrode through the dielectric material.
摘要:
A method for driving a light-emitting device in which a plurality of pixel circuits are arranged in correspondence with the intersection of a plurality of scanning lines and a plurality data lines, the pixel circuit having a light-emitting element and a driving transistor that controls the current amount of a driving current flowing the light-emitting device, comprises repeating the process within unit period including a first period and a second period following the first period, wherein the second period process includes selecting one scanning line of the plurality of scanning lines, and supplying and holding a data voltage corresponding to the luminance of the light-emitting element to a gate of the driving transistor via the data lines with respect to the plurality pixel circuits connected the selected scanning lines, and wherein the first period process includes selecting two or more scanning lines of the plurality of scanning lines, and correcting the unbalance of the driving current output from the driving transistor in the plurality of pixel circuits connected to the selected scanning lines.
摘要:
To reduce a time for applying a target voltage to a gate of a driving transistor. During an initializing period, both ends of a capacitive element become a short-circuited state by turning on transistors, so that node A and B becomes a voltage made by subtracting the threshold voltage Vthp of the driving transistor from a power source voltage VEL. During a writing period, the transistor is turned on and a data signal X-j is supplied to change the voltage at the node B as much as a voltage corresponding the current which is to flow into an OLED element. The node A is changed from the threshold voltage as much as the value obtained by dividing the voltage change by capacity ratio. During a light-emitting period, the transistor is turned on, so that the current corresponding to the voltage at the node A flows through the OLED element.
摘要翻译:以减少将目标电压施加到驱动晶体管的栅极的时间。 在初始化期间,电容元件的两端通过导通晶体管而成为短路状态,使得节点A和B成为通过减去驱动晶体管的阈值电压V th thp而得到的电压 从电源电压V EL EL。 在写入周期期间,晶体管导通,并且提供数据信号X-j以将节点B处的电压改变为与流入OLED元件的电流相对应的电压。 节点A的阈值电压与通过将电压变化除以容量比得到的值相同。 在发光周期期间,晶体管导通,使得与节点A处的电压相对应的电流流过OLED元件。
摘要:
To reduce the time for writing a voltage onto a gate of a driving transistor. In an initialization period, a node B is fixed to an initial voltage VINI, transistors are turned on, and a current flows into an OLED element, such that a voltage according to the current is held at the node A. Thereafter, the transistors are sequentially turned off, such that a threshold voltage of a driving transistor is held at the node A. In a writing period, a transistor is turned on and a data signal X-j is supplied, such that a voltage of the node B varies by the amount according to the current flowing into the OLED element. The voltage of the node A varies from the threshold voltage by the amount which is obtained by dividing the voltage variation by a capacitance ratio. In a light-emitting period, the transistor is turned on, such that a current according to the voltage of the node A flows into the OLED element.
摘要:
To reduce the time for writing a voltage onto a gate of a driving transistor. In an initialization period, a node B is fixed to an initial voltage VINI, transistors are turned on, and a current flows into an OLED element, such that a voltage according to the current is held at the node A. Thereafter, the transistors are sequentially turned off, such that a threshold voltage of a driving transistor is held at the node A. In a writing period, a transistor is turned on and a data signal X-j is supplied, such that a voltage of the node B varies by the amount according to the current flowing into the OLED element. The voltage of the node A varies from the threshold voltage by the amount which is obtained by dividing the voltage variation by a capacitance ratio. In a light-emitting period, the transistor is turned on, such that a current according to the voltage of the node A flows into the OLED element.
摘要:
To reduce a time for applying a target voltage to a gate of a driving transistor. During an initializing period, both ends of a capacitive element become a short-circuited state by turning on transistors, so that node A and B becomes a voltage made by subtracting the threshold voltage Vthp of the driving transistor from a power source voltage VEL. During a writing period, the transistor is turned on and a data signal X-j is supplied to change the voltage at the node B as much as a voltage corresponding the current which is to flow into an OLED element. The node A is changed from the threshold voltage as much as the value obtained by dividing the voltage change by capacity ratio. During a light-emitting period, the transistor is turned on, so that the current corresponding to the voltage at the node A flows through the OLED element.
摘要:
To reduce the time for writing a voltage onto a gate of a driving transistor. In an initialization period, a node B is fixed to an initial voltage VINI, transistors are turned on, and a current flows into an OLED element, such that a voltage according to the current is held at the node A. Thereafter, the transistors are sequentially turned off, such that a threshold voltage of a driving transistor is held at the node A. In a writing period, a transistor is turned on and a data signal X-j is supplied, such that a voltage of the node B varies by the amount according to the current flowing into the OLED element. The voltage of the node A varies from the threshold voltage by the amount which is obtained by dividing the voltage variation by a capacitance ratio. In a light-emitting period, the transistor is turned on, such that a current according to the voltage of the node A flows into the OLED element.
摘要:
To reduce the time for writing a voltage onto a gate of a driving transistor. In an initialization period, a node B is fixed to an initial voltage VINI, transistors are turned on, and a current flows into an OLED element, such that a voltage according to the current is held at the node A. Thereafter, the transistors are sequentially turned off, such that a threshold voltage of a driving transistor is held at the node A. In a writing period, a transistor is turned on and a data signal X-j is supplied, such that a voltage of the node B varies by the amount according to the current flowing into the OLED element. The voltage of the node A varies from the threshold voltage by the amount which is obtained by dividing the voltage variation by a capacitance ratio. In a light-emitting period, the transistor is turned on, such that a current according to the voltage of the node A flows into the OLED element.
摘要:
An image capturing apparatus includes a substrate in which multiple pixel circuits are formed and a driving unit that generates an image signal in which a target has been captured by driving the multiple pixel circuits. When the region in which the multiple pixel circuits is formed is taken as a capturing region, the capturing region includes a fingerprint capturing region for capturing a fingerprint and a vein capturing region for capturing veins.
摘要:
A light emitting unit is positioned to the subject side than a light receiving unit in a sensing device. The light emitting unit includes a light emitting layer, a first electrode, a second electrode which has an opening, and an insulating layer that is provided at a position that corresponds to the opening portion of the second electrode and that partially insulates the first electrode and the second electrode. The light receiving unit includes a light receiving element that receives reflected light. The light blocking layer is provided at a position that corresponds to the opening portion, and an opening portion is formed thereon. In a case when viewed in a plan view, the light blocking layer overlaps the opening portion, and a light receiving face of the light receiving element is positioned within the opening.