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公开(公告)号：US20100047448A1
公开(公告)日：2010-02-25
申请号：US12521176
申请日：2007-11-29
CPC分类号： C23C16/4584 , C23C16/46 , H01L21/02529 , H01L21/0262 , H01L21/67115 , H01L29/66068
摘要： A film forming apparatus includes a processing chamber inside which a vacuum space is maintained and to which a film forming gas is supplied, a substrate supporting unit which is disposed inside the processing chamber and supports a substrate, and a heater which is made of a compound material comprising a high-melting point metal and carbon, is disposed inside the processing chamber, and heats the substrate.
摘要翻译： 成膜装置包括：处理室，在该处理室内保持有真空空间，供给成膜气体;基板支撑单元，设置在处理室内部并支撑基板;加热器，由化合物 包含高熔点金属和碳的材料设置在处理室内部，并加热基板。
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公开(公告)号：US08328943B2
公开(公告)日：2012-12-11
申请号：US12521176
申请日：2007-11-29
IPC分类号： C23C16/00
CPC分类号： C23C16/4584 , C23C16/46 , H01L21/02529 , H01L21/0262 , H01L21/67115 , H01L29/66068
摘要： A film forming apparatus includes a processing chamber inside which a vacuum space is maintained and to which a film forming gas is supplied, a substrate supporting unit which is disposed inside the processing chamber and supports a substrate, and a heater which is made of a compound material comprising a high-melting point metal and carbon, is disposed inside the processing chamber, and heats the substrate.
摘要翻译： 成膜装置包括：处理室，在该处理室内保持有真空空间，供给成膜气体;基板支撑单元，设置在处理室内部并支撑基板;加热器，由化合物 包含高熔点金属和碳的材料设置在处理室内部，并加热基板。
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公开(公告)号：US20120128892A1
公开(公告)日：2012-05-24
申请号：US13114096
申请日：2011-05-24
CPC分类号： H01L21/02024 , C30B33/00 , H01L29/1608
摘要： A disclosed surface processing method includes a first processing step, wherein a gas cluster beam is generated from a source material that does not contain nitrogen, and irradiated to a member to be processed, and a second processing step, wherein a nitrogen gas cluster beam is generated and irradiated to the member to be processed.
摘要翻译： 所公开的表面处理方法包括：第一处理步骤，其中从不含氮的源材料产生气体束束并照射到待处理的构件;以及第二处理步骤，其中氮气簇束为 产生并照射到待处理的构件。
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