PROCESS FOR MANUFACTURING SYNTHETIC SINGLE CRYSTAL DIAMOND MATERIAL
    2.
    发明申请
    PROCESS FOR MANUFACTURING SYNTHETIC SINGLE CRYSTAL DIAMOND MATERIAL 审中-公开
    制造合成单晶金刚石材料的工艺

    公开(公告)号:US20150027363A1

    公开(公告)日:2015-01-29

    申请号:US14383074

    申请日:2013-03-13

    Abstract: A method for manufacturing a plurality of synthetic single crystal diamonds, the method comprising: forming a plurality of seed pads, each seed pad comprising a plurality of single crystal diamond seeds anchored to, or embedded in, an inert holder; loading a carbon source, a metal catalyst, and the plurality of seed pads into a capsule; loading the capsule into a high pressure high temperature (HPHT) press; and subjecting the capsule to a HPHT growth cycle to grow single crystal diamond material on the plurality of single crystal diamond seeds, the HPHT growth cycle comprising: initiating HPHT growth of single crystal diamond material on the plurality of single crystal diamond seeds by increasing pressure and temperature; maintaining HPHT growth of single crystal diamond material on the plurality of single crystal diamond seeds via a pressure driven growth process by controlling and maintaining pressure and temperature; and terminating HPHT growth of single crystal diamond material on the plurality of single crystal diamond seeds by reducing pressure and temperature, wherein the plurality of single crystal diamond seeds remain anchored to, or embedded in, the inert holders during the HPHT growth cycle.

    Abstract translation: 一种用于制造多种合成单晶金刚石的方法,所述方法包括:形成多个种子垫,每个种子垫包括多个固定在惰性保持器上或嵌入在惰性保持器中的单晶金刚石种子; 将碳源,金属催化剂和所述多个种子垫装载到胶囊中; 将胶囊装入高压高温(HPHT)压机中; 以及对所述胶囊进行HPHT生长周期以在所述多个单晶金刚石晶种上生长单晶金刚石材料,所述HPHT生长周期包括:通过增加压力在所述多个单晶金刚石晶种上引发单晶金刚石材料的HPHT生长;以及 温度; 通过控制和保持压力和温度,通过压力驱动生长过程,保持多晶单晶金刚石材料的HPHT生长; 并通过降低压力和温度来终止在多个单晶金刚石晶种上的单晶金刚石材料的HPHT生长,其中多个单晶金刚石晶种在HPHT生长周期期间保持锚定或嵌入在惰性保持器中。

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