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1.发明授权Method to remove metal and silicon oxide during gas-phase sacrificial oxide etch 失效在气相牺牲氧化物蚀刻期间去除金属和氧化硅的方法公开(公告)号：US06534413B1
公开(公告)日：2003-03-18
申请号：US09698467
申请日：2000-10-27
IPC分类号： H01L21302
CPC分类号： H01L21/02049 , B81C1/00936 , H01L21/31116
摘要： A method for removing sacrificial materials and metal contamination from silicon surfaces during the manufacturing of an integrated micromechanical device and a microelectronic device on a single chip is provided which includes the steps of adjusting the temperature of the chip using a reaction chamber to a temperature appropriate for the selection of a beta-diketone and the design of micromechanical and microelectronic devices, cycle purging the chamber using an inert gas to remove atmospheric gases and trace amounts of water, introducing HF and the beta-diketone as a reactive mixture into the reaction chamber which contains at least one substrate to be etched, flowing the reactive mixture over the substrate until the sacrificial materials and metal contamination have been substantially removed, stopping the flow of the reactive mixture; and cycle purging the chamber to remove residual reactive mixture and any remaining reaction by-products. Optionally, an oxidant gas may be added to the reactive mixture to promote the oxidation of metal species.
摘要翻译： 提供了在单个芯片上集成微机械装置和微电子器件的制造期间从硅表面去除牺牲材料和金属污染的方法，其包括以下步骤：使用反应室将芯片的温度调节到适于 选择β-二酮和微机电和微电子器件的设计，使用惰性气体循环清洗室以除去大气气体和痕量的水，将HF和β-二酮作为反应混合物引入反应室，其中 包含至少一个要蚀刻的基底，使反应混合物流过基底，直到牺牲材料和金属污染被基本上除去，停止反应混合物的流动; 并循环清洗室以除去残留的反应性混合物和任何剩余的反应副产物。 任选地，氧化剂气体可以加入到反应混合物中以促进金属物质的氧化。
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公开(公告)号：US6159859A
公开(公告)日：2000-12-12
申请号：US93975
申请日：1998-06-09
IPC分类号： H01L21/302 , H01L21/304 , H01L21/306
CPC分类号： H01L21/02049
摘要： The present invention is a process for thermal, vapor phase removal of silicon oxides and metal-containing contaminants from a surface of a substrate of a type used in manufacturing semiconductor devices comprising contacting the substrate at an elevated temperature at an elevated temperature appropriate to generate and maintain an effective amount of a cleaning reagent to form volatile by-products of the silicon oxides and the metal-containing contaminants and removing the volatile by-products from the surface, wherein the cleaning reagent is a complex of hydrogen fluoride and an oxygen-containing compound selected from the group consisting of one or more of trifluoroacetic acid, trifluoroacetic anhydride, 1,2-propanedione, a .beta.-diketone and a .beta.-diketoimine of the formula: ##STR1##
摘要翻译： 本发明是用于从用于制造半导体器件的类型的衬底的表面热，气相去除氧化硅和含金属的污染物的方法，包括在升高的温度下使衬底接触，所述高温适于产生和 保持有效量的清洗试剂以形成氧化硅和含金属污染物的挥发性副产物，并从表面除去挥发性副产物，其中清洗试剂是氟化氢和含氧气体的络合物 选自三氟乙酸，三氟乙酸酐，1,2-丙二酮，β-二酮和下式的β-二酮亚胺中的一种或多种的化合物：
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