摘要:
A computer-implemented method of managing a memory of a non-volatile solid state memory device by balancing write/erase cycles among blocks to level block usage. The method includes: monitoring an occurrence of an error during a read operation in a memory unit of the device, wherein the error is correctable by error-correcting code; and programming the memory unit according to the monitored occurrence of the error; wherein the step of monitoring the occurrence of an error is carried out for at least one block; and wherein said step of programming comprises wear-leveling the monitored block according the error monitored for the monitored block. A computer system and a computer program-product is also provided.The non-volatile solid state memory device includes: a memory unit having data stored therein; and a controller with a logic for programming the memory unit according to a monitored occurrence of an error during a read operation. The method includes: monitoring an occurrence of an error during a read operation in a memory unit of the device; and programming the memory unit according to the monitored occurrence of the error.
摘要:
A pseudo peer-to-peer network system including several clients, each adapted to execute a path driver program. A path driver program is provided, including the steps of locating storage peers connected to the network via a network interface for storing or accessing data items provided in memories of storage peers by means of a global address table. The global address table is updated periodically by at least one configuration server of the pseudo peer-to-peer network. The network further includes at least one time server, which generates a global time clock to which local time clocks of all storage peers of the pseudo peer-to-peer network are synchronized such that a global address table updated by the configuration server is activated by all storage peers at the same scheduled time to be consistent throughout the pseudo peer-to-peer network at all times.
摘要:
A computer-implemented method of managing a memory of a non-volatile solid state memory device by balancing write/erase cycles among blocks to level block usage. The method includes: monitoring an occurrence of an error during a read operation in a memory unit of the device, wherein the error is correctable by error-correcting code; and programming the memory unit according to the monitored occurrence of the error; wherein the step of monitoring the occurrence of an error is carried out for at least one block; and wherein said step of programming comprises wear-leveling the monitored block according the error monitored for the monitored block. A computer system and a computer program-product is also provided.The non-volatile solid state memory device includes: a memory unit having data stored therein; and a controller with a logic for programming the memory unit according to a monitored occurrence of an error during a read operation. The method includes: monitoring an occurrence of an error during a read operation in a memory unit of the device; and programming the memory unit according to the monitored occurrence of the error.
摘要:
A pseudo peer-to-peer network system including several clients, each adapted to execute a path driver program. A path driver program is provided, including the steps of locating storage peers connected to the network via a network interface for storing or accessing data items provided in memories of storage peers by means of a global address table. The global address table is updated periodically by at least one configuration server of the pseudo peer-to-peer network. The network further includes at least one time server, which generates a global time clock to which local time clocks of all storage peers of the pseudo peer-to-peer network are synchronized such that a global address table updated by the configuration server is activated by all storage peers at the same scheduled time to be consistent throughout the pseudo peer-to-peer network at all times.
摘要:
A method for wear-leveling cells, pages, sub-pages or blocks of a memory such as a flash memory includes receiving (S10) a chunk of data to be written on the cell, page, sub-page or block of the memory; counting (S40), in the received chunk of data, a number of times a given type of binary data ‘0’ or ‘1’ is to be written; and distributing (S50) the writing of the received chunk of data among cells, pages, sub-pages or blocks of the memory such as to wear-level the memory with respect to the number of the given type of binary data ‘0’ or ‘1’ counted in the chunk of data to be written.
摘要:
Systems and methods are provided that confront the problem of failed storage integrated circuits (ICs) in a solid state drive (SSD) by using a fault-tolerant architecture along with one error correction code (ECC) mechanism for random/burst error corrections and an L-fold interleaving mechanism. The systems and methods described herein keep the SSD operational when one or more integrated circuits fail and allow the recovery of previously stored data from failed integrated circuits and allow random/burst errors to be corrected in other operational integrated circuits. These systems and methods replace the failed integrated circuits with fully functional/operational integrated circuits treated herein as spare integrated circuits. Furthermore, these systems and methods improve I/O performance in terms of maximum achievable read/write data rate.
摘要:
The invention is directed to a method for wear-leveling cells or pages or sub-pages or blocks of a memory such as a flash memory, the method comprising:—receiving (S10) a chunk of data to be written on a cell or page or sub-page or block of the memory;—counting (S40) in the received chunk of data the number of times a given type of binary data ‘0’ or ‘I’ is to be written; and—distributing (S50) the writing of the received chunk of data amongst cells or pages or sub-pages or blocks of the memory such as to wear-level the memory with respect to the number of the given type of binary data ‘0’ or ‘I’ counted in the chunk of data to be written.
摘要:
Exemplary embodiments of the present invention comprise a method for the use of an intra-disk redundancy storage protection operation for the scrubbing of a disk. The method comprises initiating a disk scrubbing operation upon each disk of a plurality of disks that are comprised within a storage disk array, issuing a disk scrubbing command for a predetermined segment of the disks that are comprised within the storage disk array at a predetermined time interval, and identifying an unrecoverable segment on a disk. The method further comprises determining if unrecoverable sectors comprised within the unrecoverable segment can be reconstructed, and reconstructing the unrecoverable sectors of the unrecoverable segment and relocating the segment to a spare storage location on the disk in the event that the segment cannot be reconstructed within its original storage location.
摘要:
A mechanism is provided for controlling a solid state storage device in which the solid state storage comprises erasable blocks each comprising a plurality of data write locations. Input data is stored in successive groups of data write locations, each group comprising write locations in a set of erasable blocks in each of a plurality of logical subdivisions of the solid state storage. The input data is error correction encoded such that each group contains an error correction code for the input data in that group. Metadata, indicating the location of input data in the solid state storage, is maintained in memory. An indication of validity of data stored in each data write location is also maintained. Prior to erasing a block, valid input data is recovered from the group containing write locations in that block. The recovered data is then re-stored as new input data.
摘要:
A mechanism is provided for controlling a solid state storage device in which the solid state storage comprises erasable blocks each comprising a plurality of data write locations. Input data is stored in successive groups of data write locations, each group comprising write locations in a set of erasable blocks in each of a plurality of logical subdivisions of the solid state storage. The input data is error correction encoded such that each group contains an error correction code for the input data in that group. Metadata, indicating the location of input data in the solid state storage, is maintained in memory. An indication of validity of data stored in each data write location is also maintained. Prior to erasing a block, valid input data is recovered from the or each said group containing write locations in that block. The recovered data is then re-stored as new input data.