公开(公告)号：US20230263071A1

公开(公告)日：2023-08-17

申请号：US17670049

申请日：2022-02-11

Applicant: Everspin Technologies, Inc.

Inventor： Sumio IKEGAWA ,  Jijun SUN ,  Monika ARORA

IPC: H01L43/02 ,  H01L27/22 ,  H01L43/10 ,  H01L43/12

CPC classification number: H01L43/02 ,  H01L27/228 ,  H01L43/10 ,  H01L43/12

Abstract: A magnetoresistive stack may include a first electrically conductive material, a fixed region having a fixed magnetic state, a free region configured to have a first magnetic state and a second magnetic state, a dielectric layer disposed between the fixed region and the free region, a spacer region, and a cap layer disposed between the spacer region and the free region. The free region may include a layer of ferromagnetic material, an insertion layer, an iPMA layer, and/or a low saturation magnetization layer.