公开(公告)号：US20200027683A1

公开(公告)日：2020-01-23

申请号：US16495784

申请日：2018-02-28

Applicant: Evince Technology Ltd.

Inventor： Gareth Andrew Taylor

IPC: H01J1/308 ,  H01J1/304 ,  H01J9/02 ,  H01L29/16 ,  H01L29/06 ,  H01L29/861 ,  H01L29/66 ,  H01L21/04

Abstract: An electrical device comprising a substrate of diamond material and elongate metal protrusions extending into respective recesses in the substrate. Doped semiconductor layers, arranged between respective protrusions and the substrate, behave as n type semiconducting material on application of an electric field, between the protrusions and the substrate, suitable to cause a regions of positive space charge within the semiconductor layers.

公开(公告)号：US11011605B2

公开(公告)日：2021-05-18

申请号：US16495784

申请日：2018-02-28

Applicant: Evince Technology Ltd.

Inventor： Gareth Andrew Taylor

IPC: H01L29/16 ,  H01J1/304 ,  H01J1/308 ,  H01J9/02 ,  H01L21/04 ,  H01L29/06 ,  H01L29/66 ,  H01L29/861

Abstract: An electrical device comprising a substrate of diamond material and elongate metal protrusions extending into respective recesses in the substrate. Doped semiconductor layers, arranged between respective protrusions and the substrate, behave as n type semiconducting material on application of an electric field, between the protrusions and the substrate, suitable to cause a regions of positive space charge within the semiconductor layers.