-
公开(公告)号：US20150287786A1
公开(公告)日：2015-10-08
申请号：US14742328
申请日：2015-06-17
IPC分类号： H01L29/10 , H01L29/66 , H01L29/739 , H01L21/265 , H01L29/36 , H01L29/06 , H01L21/304
CPC分类号： H01L29/1095 , H01L21/2253 , H01L21/26513 , H01L29/0615 , H01L29/0834 , H01L29/36 , H01L29/66333 , H01L29/66348 , H01L29/7395 , H01L29/7397
摘要： A power device having fast switching characteristic, while keeping EMI noise to a minimum and a method of fabricating the same are provided. The power device includes a first field stop layer having a first conductivity type, a first drift region formed on the first field stop layer and having a first conductivity type in an impurity concentration that is lower than the first field stop layer, a buried region formed on the first drift region and having the first conductivity type in an impurity concentration that is higher than the first drift region, a second drift region formed on the buried region, a power device cell formed at an upper portion of the second drift region, and a collector region formed below the first field stop layer.
摘要翻译： 提供具有快速开关特性的功率器件，同时将EMI噪声保持在最小值，并提供其制造方法。 功率器件包括具有第一导电类型的第一场阻挡层，形成在第一场阻挡层上并且具有低于第一场阻挡层的杂质浓度的第一导电类型的第一漂移区，形成的掩埋区 在第一漂移区域上具有高于第一漂移区域的杂质浓度的第一导电类型，形成在掩埋区域上的第二漂移区域，形成在第二漂移区域的上部的功率器件单元，以及 形成在第一场停止层下方的集电区。
-
公开(公告)号：US20140312382A1
公开(公告)日：2014-10-23
申请号：US14316248
申请日：2014-06-26
IPC分类号： H01L29/739 , H01L21/266 , H01L29/66
CPC分类号： H01L29/66348 , H01L21/26513 , H01L21/266 , H01L21/304 , H01L29/0615 , H01L29/0619 , H01L29/0696 , H01L29/0804 , H01L29/0821 , H01L29/0834 , H01L29/1004 , H01L29/1095 , H01L29/36 , H01L29/4236 , H01L29/66333 , H01L29/732 , H01L29/7395 , H01L29/7397
摘要： Provided are a power device having an improved field stop layer and a method of manufacturing the same. The power device includes: a first field stop layer formed of a semiconductor substrate and of a first conductive type; a second field stop layer formed on the first field stop layer and of the first conductive type, the second field stop layer having a region with an impurity concentration higher than the first field stop layer; a drift region formed on the second field stop layer and of the first conductive type, the drift region having an impurity concentration lower than the first field stop layer; a plurality of power device cells formed on the drift region; and a collector region formed below the first field stop layer, wherein the second field stop layer includes a first region having a first impurity concentration and a second region having a second impurity concentration higher than the first impurity concentration.
摘要翻译： 提供一种具有改进的场停止层的功率器件及其制造方法。 功率器件包括：由半导体衬底和第一导电类型形成的第一场阻挡层; 形成在第一场致发射层和第一导电类型上的第二场阻挡层，第二场阻挡层具有杂质浓度高于第一场停止层的区域; 漂移区，形成在所述第二场阻挡层和所述第一导电类型上，所述漂移区的杂质浓度低于所述第一场停止层; 形成在所述漂移区上的多个功率器件单元; 以及形成在所述第一场阻挡层下方的集电极区域，其中所述第二场阻挡层包括具有第一杂质浓度的第一区域和具有高于所述第一杂质浓度的第二杂质浓度的第二区域。
-
公开(公告)号：US20170243951A1
公开(公告)日：2017-08-24
申请号：US15588270
申请日：2017-05-05
IPC分类号： H01L29/66 , H01L29/06 , H01L29/10 , H01L29/739 , H01L29/08 , H01L21/266 , H01L29/423 , H01L21/265 , H01L21/304
CPC分类号： H01L29/66348 , H01L21/26513 , H01L21/266 , H01L21/304 , H01L29/0615 , H01L29/0619 , H01L29/0696 , H01L29/0804 , H01L29/0821 , H01L29/0834 , H01L29/1004 , H01L29/1095 , H01L29/36 , H01L29/4236 , H01L29/66333 , H01L29/732 , H01L29/7395 , H01L29/7397
摘要： Provided are a power device having an improved field stop layer and a method of manufacturing the same. The method can include performing a first ion implant process by implanting impurity ions of a first conductive type into a front surface of a semiconductor substrate to form an implanted field stop layer where the semiconductor substrate is the first conductive type. The method can include performing a second ion implant process by implanting impurity ions of the first conductive type into a first part of the implanted field stop layer such that an impurity concentration of the first part of the implanted field stop layer is higher than an impurity concentration of a second part of the implanted field stop layer.
-
-
搜索结果
3 条记录 (耗时 0.014 秒)
