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公开(公告)号：US20150287786A1
公开(公告)日：2015-10-08
申请号：US14742328
申请日：2015-06-17
IPC分类号： H01L29/10 , H01L29/66 , H01L29/739 , H01L21/265 , H01L29/36 , H01L29/06 , H01L21/304
CPC分类号： H01L29/1095 , H01L21/2253 , H01L21/26513 , H01L29/0615 , H01L29/0834 , H01L29/36 , H01L29/66333 , H01L29/66348 , H01L29/7395 , H01L29/7397
摘要： A power device having fast switching characteristic, while keeping EMI noise to a minimum and a method of fabricating the same are provided. The power device includes a first field stop layer having a first conductivity type, a first drift region formed on the first field stop layer and having a first conductivity type in an impurity concentration that is lower than the first field stop layer, a buried region formed on the first drift region and having the first conductivity type in an impurity concentration that is higher than the first drift region, a second drift region formed on the buried region, a power device cell formed at an upper portion of the second drift region, and a collector region formed below the first field stop layer.
摘要翻译： 提供具有快速开关特性的功率器件，同时将EMI噪声保持在最小值，并提供其制造方法。 功率器件包括具有第一导电类型的第一场阻挡层，形成在第一场阻挡层上并且具有低于第一场阻挡层的杂质浓度的第一导电类型的第一漂移区，形成的掩埋区 在第一漂移区域上具有高于第一漂移区域的杂质浓度的第一导电类型，形成在掩埋区域上的第二漂移区域，形成在第二漂移区域的上部的功率器件单元，以及 形成在第一场停止层下方的集电区。
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公开(公告)号：US20140141584A1
公开(公告)日：2014-05-22
申请号：US14165187
申请日：2014-01-27
发明人： Jin-myung KIM , Se-woong OH , Jae-gil LEE , Young-chul CHOI , Ho-cheol JANG
IPC分类号： H01L29/66
CPC分类号： H01L29/66712 , H01L29/0696 , H01L29/0878 , H01L29/1095 , H01L29/4238 , H01L29/7395 , H01L29/7802
摘要： A power semiconductor device includes: a drain region of a first conductive type; a drift region of a first conductive type formed on the drain region; a first body region of a second conductive type formed below an upper surface of the drift region; a second body region of a second conductive type formed below the upper surface of the drift region and in the first body region; a third body region of a second conductive type formed by protruding downwards from a lower end of the first body region; a source region of a first conductive type formed below the upper surface of the drift region and in the first body region; and a gate insulating layer formed on channel regions of the first body region and on the drift region between the first body regions.
摘要翻译： 功率半导体器件包括：第一导电类型的漏极区域; 形成在漏区上的第一导电类型的漂移区; 形成在所述漂移区域的上表面下方的第二导电类型的第一体区; 第二导电类型的第二体区，形成在所述漂移区的上表面下方和所述第一体区中; 第二导电类型的第三体区域，从第一体区域的下端向下突出形成; 形成在所述漂移区域的上表面下方的所述第一导电类型的源极区域和所述第一体区域中; 以及栅极绝缘层，形成在第一体区的沟道区域和第一体区之间的漂移区上。
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