公开(公告)号：US20130256787A1

公开(公告)日：2013-10-03

申请号：US13433665

申请日：2012-03-29

申请人： FEI XIE ,  WEN CHENG TIEN ,  YA PING CHEN ,  LI BIN MAN ,  KUO JUNG CHEN ,  YU LIU ,  TIAN YI ZHANG ,  SISI XIE

发明人： FEI XIE ,  WEN CHENG TIEN ,  YA PING CHEN ,  LI BIN MAN ,  KUO JUNG CHEN ,  YU LIU ,  TIAN YI ZHANG ,  SISI XIE

IPC分类号： H01L29/78 ,  H01L21/283

CPC分类号： H01L29/7827 ,  H01L21/76816 ,  H01L21/76897 ,  H01L21/823425 ,  H01L21/823443 ,  H01L21/823456 ,  H01L21/823475 ,  H01L29/41766 ,  H01L29/42372 ,  H01L29/4238 ,  H01L29/456 ,  H01L29/4933 ,  H01L29/66719 ,  H01L29/66727 ,  H01L29/7811 ,  Y02P80/30

摘要： A method for contacting MOS devices. First openings in a photosensitive material are formed over a substrate having a top dielectric in a first die area and a second opening over a gate stack in a second die area having the top dielectric, a hard mask, and a gate electrode. The top dielectric layer is etched to form a semiconductor contact while etching at least a portion the hard mask layer thickness over a gate contact area exposed by the second opening. An inter-layer dielectric (ILD) is deposited. A photosensitive material is patterned to generate a third opening in the photosensitive material over the semiconductor contact and a fourth opening inside the gate contact area. The ILD is etched through to reopen the semiconductor contact while etching through the ILD and residual hard mask if present to provide a gate contact to the gate electrode.

摘要翻译： 一种接触MOS器件的方法。 感光材料中的第一开口形成在具有第一管芯区域中的顶部电介质的衬底上，并且在具有顶部电介质的第二管芯区域中的栅极堆叠上的第二开口，硬掩模和栅极电极。 蚀刻顶部电介质层以形成半导体接触，同时在由第二开口暴露的栅极接触区域上蚀刻至少一部分硬掩模层厚度。 沉积层间电介质（ILD）。 图案化感光材料以在半导体触点上方的感光材料中产生第三开口，并在栅极接触区域内产生第四开口。 蚀刻通过ILD以重新打开半导体接触，同时蚀刻通过ILD和残余硬掩模（如果存在）以提供与栅电极的栅极接触。