公开(公告)号：US20210118912A1

公开(公告)日：2021-04-22

申请号：US16463670

申请日：2017-11-28

申请人： FLEXENABLE LIMITED

发明人： Jan JONGMAN ,  Brian ASPLIN

IPC分类号： H01L27/12 ,  H01L27/28 ,  H01L51/00 ,  H01L51/05

摘要： A technique of producing a stack defining a plurality of TFTs including at least source/drain electrodes and addressing lines at a source/drain level, wherein the method comprises: forming a patterned source/drain level stack comprising at least a first layer over the support substrate and a second layer over the first layer, to define at least said source/drain electrodes and said addressing lines; depositing semiconductor channel material over at least said source/drain electrodes and said addressing lines; and patterning the layer of semiconductor channel material by a patterning process; wherein the material of the first layer is more resistant to removal by said patterning process than the material of said second layer.

公开(公告)号：US20170213915A1

公开(公告)日：2017-07-27

申请号：US15039126

申请日：2014-12-09

申请人： FLEXENABLE LIMITED

发明人： Jon JONGMAN ,  Brian ASPLIN

IPC分类号： H01L29/786 ,  H01L27/12 ,  H01L29/66

CPC分类号： H01L29/78618 ,  H01L27/1225 ,  H01L27/1288 ,  H01L29/66969 ,  H01L29/7869 ,  H01L51/105

摘要： A transistor device comprising: source and drain conductors connected by a semiconductor channel provided by a layer of semiconductor material formed over the source and drain conductors; and a gate conductor capacitively coupled to the semiconductor channel via a gate dielectric; wherein at least one of the source and drain conductors comprises a multilayer structure in at least one region thereof, the multilayer structure comprising a lower layer and an upper layer, the material of the lower layer being better than the material of the upper layer at injecting charge into the semiconductor material; and the material of the upper layer exhibiting better electrical conductivity than the material of the lower layer.