公开(公告)号：US09768356B2

公开(公告)日：2017-09-19

申请号：US15105541

申请日：2014-12-17

申请人： FORSCHUNGSVERBUND BERLIN E.V.

发明人： Sven Einfeldt ,  Luca Redaelli ,  Michael Kneissl

IPC分类号： H01L33/40 ,  H01L21/285 ,  H01L29/45 ,  H01S5/22 ,  H01L33/36 ,  H01S5/323 ,  H01L33/32 ,  H01L33/38 ,  H01L33/58 ,  H01L29/20 ,  H01S5/042 ,  H01L33/00

CPC分类号： H01L33/40 ,  H01L21/28575 ,  H01L29/2003 ,  H01L29/452 ,  H01L33/0075 ,  H01L33/32 ,  H01L33/36 ,  H01L33/38 ,  H01L33/58 ,  H01L2933/0016 ,  H01S5/0425 ,  H01S5/22 ,  H01S5/32341

摘要： A method is described for forming at least one metal contact on a surface of a semiconductor and a device with at least one metal contact. The method is used for forming at least one metal contact (60) on a surface (11) of a semiconductor (10) and has the steps of: applying a metal layer (20) of palladium onto the semiconductor surface (11), applying a mask (40, 50) onto the metal layer (20), and structuring the palladium of the metal layer (20) using the mask (40, 50), wherein lateral deposits (21) of the metal are formed on sidewalls of the mask by the structuring so that the mask is embedded between the deposits (21) and the structured metal layer (20′) after the structuring. Since the mask is conductive, it can remain embedded in the metal. The deposits and the mask form a part of the contact.