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公开(公告)号：US10348056B2
公开(公告)日：2019-07-09
申请号：US15736631
申请日：2016-03-09
发明人： Jörg Fricke , Götz Erbert , Paul Crump , Jonathan Decker
摘要： Laser diode comprises an active layer; a waveguiding region at least partially surrounding the active layer; a rear facet; a front facet designed for outcoupling laser radiation, wherein the active layer extends at least partially along a first axis (X) between the rear facet and the front facet; and a grating operatively connected to the waveguiding region, wherein the grating comprises a plurality of bridges and trenches designed such that an average increase of a coupling parameter P for the plurality of trenches along the grating is non-zero, wherein the coupling parameter P of a trench is defined by the equation, wherein dres is a distance of the trench to the active layer, w is a width of the trench and Δn is the refractive index difference between a refractive index of the trench and a refractive index of a material surrounding the trench.
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2.发明申请公开(公告)号：US20130128911A1
公开(公告)日：2013-05-23
申请号：US13682848
申请日：2012-11-21
发明人： Olaf BROX , Frank Bugge , Paul Crump , Goetz Erbert , Andre Maassdorf , Christoph M. Schultz , Hans Wenzel , Markus Weyers
CPC分类号： H01L33/10 , H01L33/005 , H01S5/1231 , H01S5/187 , H01S5/32316 , H01S2304/00
摘要： A diode laser having aluminum-containing layers and a Bragg grating for stabilizing the emission wavelength achieves an improved output/efficiency. The growth process is divided into two steps for introducing the Bragg grating, wherein a continuous aluminum-free layer and an aluminum-free mask layer are continuously deposited after the first growth process such that the aluminum-containing layer is completely covered by the continuous aluminum-free layer. Structuring is performed outside the reactor without unwanted oxidation of the aluminum-containing semiconductor layer. Subsequently, the pre-structured semiconductor surface is further etched inside the reactor and the structuring is impressed into the aluminum-containing layer. In this process, so little oxygen is inserted into the semiconductor crystal of the aluminum-containing layers in the environment of the grating that output and efficiency of a diode laser are not reduced as compared to a diode laser without grating layers that was produced in an epitaxy step.
摘要翻译： 具有含铝层的二极管激光器和用于稳定发射波长的布拉格光栅实现了改进的输出/效率。 生长过程分为引入布拉格光栅的两个步骤，其中连续的无铝层和不含铝的掩模层在第一生长工艺之后连续沉积，使得含铝层被连续的铝完全覆盖 - 自由层。 在反应器外部进行结构化，而不含有铝氧化半导体层。 随后，在反应器内进一步蚀刻预构造的半导体表面，并将构造施加到含铝层中。 在这个过程中，在光栅的环境中少量的氧被插入到含铝层的半导体晶体中，与不产生光栅层的二极管激光器相比，二极管激光器的输出和效率没有降低 外延步骤
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3.发明授权公开(公告)号：US08846425B2
公开(公告)日：2014-09-30
申请号：US13682848
申请日：2012-11-21
发明人： Olaf Brox , Frank Bugge , Paul Crump , Goetz Erbert , Andre Maassdorf , Christoph M. Schultz , Hans Wenzel , Markus Weyers
CPC分类号： H01L33/10 , H01L33/005 , H01S5/1231 , H01S5/187 , H01S5/32316 , H01S2304/00
摘要： A diode laser having aluminum-containing layers and a Bragg grating for stabilizing the emission wavelength achieves an improved output/efficiency. The growth process is divided into two steps for introducing the Bragg grating, wherein a continuous aluminum-free layer and an aluminum-free mask layer are continuously deposited after the first growth process such that the aluminum-containing layer is completely covered by the continuous aluminum-free layer. Structuring is performed outside the reactor without unwanted oxidation of the aluminum-containing semiconductor layer. Subsequently, the pre-structured semiconductor surface is further etched inside the reactor and the structuring is impressed into the aluminum-containing layer. In this process, so little oxygen is inserted into the semiconductor crystal of the aluminum-containing layers in the environment of the grating that output and efficiency of a diode laser are not reduced as compared to a diode laser without grating layers that was produced in an epitaxy step.
摘要翻译： 具有含铝层的二极管激光器和用于稳定发射波长的布拉格光栅实现了改进的输出/效率。 生长过程分为引入布拉格光栅的两个步骤，其中连续的无铝层和不含铝的掩模层在第一生长工艺之后连续沉积，使得含铝层被连续的铝完全覆盖 - 自由层。 在反应器外部进行结构化，而不含有铝氧化半导体层。 随后，在反应器内进一步蚀刻预构造的半导体表面，并将构造施加到含铝层中。 在这个过程中，在光栅的环境中少量的氧被插入到含铝层的半导体晶体中，与不产生光栅层的二极管激光器相比，二极管激光器的输出和效率没有降低 外延步骤
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