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公开(公告)号:US09634615B1
公开(公告)日:2017-04-25
申请号:US15064058
申请日:2016-03-08
Applicant: FREESCALE SEMICONDUCTOR, INC.
Inventor: Abdulrhman M. S. Ahmed , Ramanujam Srinidhi Embar , Yu-Ting D. Wu
CPC classification number: H03F1/0288 , H03F3/19 , H03F3/211 , H03F3/245 , H03F2200/111 , H03F2200/225 , H03F2200/451 , H03F2203/21103 , H03F2203/21139 , H03F2203/21142
Abstract: A Doherty amplifier device operable over multiple frequency bands includes a controller that, in some embodiments, is configured to output a carrier bias signal to a first amplifier and a peaking bias signal to a second amplifier as part of a first operating configuration associated with a first frequency band, and output the peaking bias signal to the second amplifier and the carrier bias signal to a third amplifier as part of a second operating configuration associated with a second frequency band. In some embodiments, the controller is configured to select an impedance inverter configuration associated with a respective frequency band. At least one impedance inverter configuration includes a compound impedance inverter including two or more impedance inverters coupled in series with at least one node between the two or more impedance inverters coupled to an output of a third amplifier.
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公开(公告)号:US09621115B1
公开(公告)日:2017-04-11
申请号:US14966922
申请日:2015-12-11
Applicant: FREESCALE SEMICONDUCTOR INC.
Inventor: Yu-Ting D. Wu
CPC classification number: H03F1/0288 , H01L2224/48137 , H01L2224/49111 , H03F1/565 , H03F3/193 , H03F3/211 , H03F2200/451 , H03F2203/21106 , H03F2203/21139
Abstract: The embodiments described herein include amplifiers that are typically used in radio frequency (RF) applications. The amplifiers described herein use a combiner that is implemented inside the device package. Specifically, the amplifiers can be implemented with a combiner that includes a transmission line inside the device package, where the transmission line has a length between first and second ends configured to provide an impedance inverter between the outputs (e.g., drain terminals) of transistors in the amplifier.
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