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公开(公告)号：US20240128349A1
公开(公告)日：2024-04-18
申请号：US18453336
申请日：2023-08-22
发明人： Atsushi ONOGAWA , Kaname MITSUZUKA , Yuuki ODA , Tohru SHIRAKAWA
IPC分类号： H01L29/66 , H01L29/08 , H01L29/739
CPC分类号： H01L29/66348 , H01L29/0821 , H01L29/7397
摘要： Provided is a semiconductor device including: a drift region of a first conductivity type provided in a semiconductor substrate; a collector region of a second conductivity type provided on a back surface of the semiconductor substrate; a cathode region of the first conductivity type provided on the back surface of the semiconductor substrate and having a higher doping concentration than the drift region; a plurality of trench portions provided on a front surface of the semiconductor substrate; and a lifetime control portion provided in the semiconductor substrate and containing a lifetime killer, in which the lifetime control portion includes: a main region provided in a diode portion; and a decay region provided to extend from the main region in a direction parallel to the front surface of the semiconductor substrate and having a lifetime killer concentration that has decayed more than a lifetime killer concentration of the main region.
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公开(公告)号：US20240088221A1
公开(公告)日：2024-03-14
申请号：US18513685
申请日：2023-11-20
发明人： Kaname MITSUZUKA
IPC分类号： H01L29/08 , H01L29/06 , H01L29/417 , H01L29/739
CPC分类号： H01L29/0804 , H01L29/0696 , H01L29/41708 , H01L29/7397
摘要： A semiconductor device includes: a gate trench portion provided in a semiconductor substrate; a first trench portion provided in the semiconductor substrate and adjacent to the gate trench portion; an emitter region of a first conductivity type provided to be in contact with the gate trench portion in a mesa portion between the gate trench portion and the first trench portion; a contact region of a second conductivity type provided to be in contact with the first trench portion in the mesa portion; a metal layer provided above the semiconductor substrate; and a resistance portion of the first conductivity type provided to be in contact with the metal layer and the emitter region and having a lower doping concentration than that of the emitter region.
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公开(公告)号：US20240055483A1
公开(公告)日：2024-02-15
申请号：US18356255
申请日：2023-07-21
发明人： Yuki KARAMOTO , Kaname MITSUZUKA
IPC分类号： H01L29/08 , H01L27/06 , H01L29/06 , H01L29/10 , H01L29/861 , H01L29/739
CPC分类号： H01L29/0834 , H01L27/0664 , H01L29/0638 , H01L29/1095 , H01L29/8613 , H01L29/7397
摘要： Provided is a semiconductor device including a buffer region of a first conductivity type, which is provided between a lower surface of a semiconductor substrate and a drift region, has three or more doping concentration peaks in a depth direction of the semiconductor substrate, and has a higher concentration than the drift region, in which the three or more doping concentration peaks include a deepest peak farthest from the lower surface of the semiconductor substrate and a second peak second closest to the lower surface of the semiconductor substrate, and a peak width of the second peak is 2 times or more of a peak width of the deepest peak in the depth direction.
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公开(公告)号：US20230378333A1
公开(公告)日：2023-11-23
申请号：US18305386
申请日：2023-04-24
发明人： Tohru SHIRAKAWA , Kaname MITSUZUKA
IPC分类号： H01L29/739 , H01L29/06 , H01L29/10
CPC分类号： H01L29/7397 , H01L29/0696 , H01L29/1095
摘要： Provided is a semiconductor device including: a collector region of a second conductivity type, which is provided between a drift region and a lower surface of a semiconductor substrate, in which the collector region includes a first region and a second region having a lower implantation efficiency of carriers with respect to the drift region than the first region, and when an area of the first region and an area of the second region per unit area of the collector region in a top view are respectively represented by S1 and S2, the implantation efficiency of the first region is represented by η1, and the implantation efficiency of the second region is represented by η2, an average implantation efficiency ηC given by an expression below is 0.1 or more and 0.4 or less: ηC=(S1×η1+S2×η2)/(S1+S2).
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公开(公告)号：US20220271152A1
公开(公告)日：2022-08-25
申请号：US17740363
申请日：2022-05-10
IPC分类号： H01L29/739 , H01L29/08 , H01L29/66 , H01L29/861
摘要： To provide a semiconductor device having excellent conduction characteristics of a transistor portion and a diode portion. The semiconductor device having a transistor portion and a diode portion, the semiconductor device includes: a drift region of a first conductivity type provided on a semiconductor substrate, a first well region of a second conductivity type provided on an upper surface side of the semiconductor substrate, an anode region of the second conductivity provided on the upper surface side of the semiconductor substrate, in the diode portion, and a first high concentration region of a second conductivity type which is provided in contact with a first well region between the anode region and the first well region, and has a higher doping concentration than the anode region.
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公开(公告)号：US20210265340A1
公开(公告)日：2021-08-26
申请号：US17133692
申请日：2020-12-24
发明人： Kaname MITSUZUKA , Yuichi ONOZAWA
IPC分类号： H01L27/06 , H01L23/34 , H01L29/10 , H01L29/866 , H01L29/739 , H01L29/66
摘要： Provided is a semiconductor device including a semiconductor substrate; a transistor portion provided in the semiconductor substrate; a current sensing portion for detecting current flowing through the transistor portion; an emitter electrode set to an emitter potential of the transistor portion; a sense electrode electrically connected to the current sensing portion; and a Zener diode electrically connected between the emitter electrode and the sense electrode. Provided is a semiconductor device fabricating method including providing a transistor portion in a semiconductor substrate; providing a current sensing portion for detecting current flowing through the transistor portion; providing an emitter electrode set to an emitter potential of the transistor portion; providing a sense electrode electrically connected to the current sensing portion; and providing a Zener diode electrically connected between the emitter electrode and the sense electrode.
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公开(公告)号：US20210043758A1
公开(公告)日：2021-02-11
申请号：US16910107
申请日：2020-06-24
发明人： Kouta YOKOYAMA , Toru AJIKI , Kaname MITSUZUKA , Tohru SHIRAKAWA
IPC分类号： H01L29/739 , H01L29/861 , H01L29/10
摘要： Provided is a semiconductor device that includes a semiconductor substrate that is provided with a first conductivity type drift region, a transistor portion that includes a second conductivity type collector region in contact with a lower surface of the semiconductor substrate, and a diode portion that includes a first conductivity type cathode region in contact with the lower surface of the semiconductor substrate, and is alternately disposed with the transistor portion along an arrangement direction in an upper surface of the semiconductor substrate. In the transistor portions, a width in the arrangement direction of two or more transistor portions sequentially selected from the transistor portions nearer to the center in the arrangement direction of the semiconductor substrate is larger than a width in the arrangement direction of one of the other transistor portions.
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公开(公告)号：US20240274663A1
公开(公告)日：2024-08-15
申请号：US18641408
申请日：2024-04-21
发明人： Tohru SHIRAKAWA , Kaname MITSUZUKA
IPC分类号： H01L29/08 , H01L27/06 , H01L29/06 , H01L29/739 , H01L29/861
CPC分类号： H01L29/0821 , H01L27/0664 , H01L29/0623 , H01L29/7397 , H01L29/8613
摘要： Provided is a semiconductor device including: a semiconductor substrate provided with a drift region of a first conductivity type; an emitter region of the first conductivity type provided in contact with an upper surface of the semiconductor substrate and having a higher doping concentration than the drift region; a base region of a second conductivity type provided in contact with the emitter region; a collector region of the second conductivity type provided between the drift region and a lower surface of the semiconductor substrate; and a floating region of the first conductivity type provided in contact with an upper surface of the collector region and having a higher doping concentration than the collector region, wherein the collector region has a first region which is not covered with the floating region and a second region which is covered with the floating region.
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公开(公告)号：US20230335599A1
公开(公告)日：2023-10-19
申请号：US18333562
申请日：2023-06-13
发明人： Yoshiharu KATO , Toru AJIKI , Tohru SHIRAKAWA , Misaki TAKAHASHI , Kaname MITSUZUKA , Takashi YOSHIMURA , Yuichi ONOZAWA , Hiroshi TAKISHITA , Soichi YOSHIDA
IPC分类号： H01L29/36 , H01L21/265 , H01L29/06 , H01L29/10
CPC分类号： H01L29/36 , H01L21/265 , H01L29/0615 , H01L29/1095
摘要： A device includes a substrate with upper/lower surfaces, including hydrogen containing region having hydrogen chemical concentration peaks in a depth direction. A carrier concentration distribution of the hydrogen containing region includes a first carrier concentration peak, a second carrier concentration peak closest to the first carrier concentration peak, a third carrier concentration peak arranged closer to the upper surface than the second carrier concentration peak, a first inter peak region arranged between the first and second carrier concentration peaks, a second inter peak region arranged between the second and third carrier concentration peaks, and an inter-peaks concentration peak arranged in the second inter peak region such that the concentration peak does not overlap the hydrogen chemical concentration peaks in the second and third carrier concentration peaks. A local minimum value of a carrier concentration in the first inter peak region is smaller than that of the second inter peak region.
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公开(公告)号：US20220392815A1
公开(公告)日：2022-12-08
申请号：US17890261
申请日：2022-08-17
IPC分类号： H01L21/66
摘要： There is provided a semiconductor device including a semiconductor substrate, the semiconductor device including: a sensing portion that is provided on the semiconductor substrate and that is configured to detect predetermined physical information; a sensing pad portion that is provided above an upper surface of the semiconductor substrate and that is connected to the sensing portion; a gate runner which is provided above the upper surface of the semiconductor substrate and to which a gate potential is applied; and one or more separated conductive portions in which each separated conductive portion is provided between the sensing pad portion and the semiconductor substrate and that is separated from the gate runner.
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