公开(公告)号：US20240222297A1

公开(公告)日：2024-07-04

申请号：US18602594

申请日：2024-03-12

申请人： FUJIAN JINHUA INTEGRATED CIRCUIT CO., LTD.

发明人： Yi-Wang JHAN ,  Yung-Tai HUANG ,  Xin YOU ,  Xiaopei FANG ,  Yu-Cheng TUNG

IPC分类号： H01L23/00 ,  H01L21/8234 ,  H01L29/10 ,  H01L29/417

CPC分类号： H01L24/05 ,  H01L21/823462 ,  H01L21/823475 ,  H01L24/03 ,  H01L29/1033 ,  H01L29/41775 ,  H01L2224/036 ,  H01L2224/0508 ,  H01L2224/05099

摘要： A semiconductor structure is disclosed. The semiconductor structure includes: a substrate; a plurality of gate conductive patterns on the substrate; an interlayer dielectric layer covering the gate conductive patterns on the substrate; an interconnect structure comprising a contact plug and a first contact pad, the contact plug extending through the interlayer dielectric layer to the substrate, the first contact pad fully covering a top of the contact plug and extending laterally over part of a top surface of the interlayer dielectric layer; and a second contact pad formed on the top surface of the interlayer dielectric layer and spaced apart from a side edge of the first contact pad, wherein the second contact pad is formed and fully overlays on the interlayer dielectric layer and an isolation plug is spaced apart from the first contact pad.

公开(公告)号：US20210407936A1

公开(公告)日：2021-12-30

申请号：US17290040

申请日：2020-03-17

申请人： FUJIAN JINHUA INTEGRATED CIRCUIT CO., LTD.

发明人： Yi-Wang JHAN ,  Yung-Tai HUANG ,  Xin YOU ,  Xiaopei FANG ,  Yu-Cheng TUNG

IPC分类号： H01L23/00 ,  H01L29/417

摘要： A semiconductor structure and a method of fabricating therefor are disclosed. A second contact pad (500) is arranged lateral to a first contact pad (420) in an interconnect structure (400). As a result, during fabrication of the interconnect structure (400), the first contact pad (420) will not be present alone in a large bland area, due to the presence of the second contact pad (500). Thus, a pattern feature for the first contact pad (420) will not be over-resolved, increasing formation accuracy of the first contact pad (420) and thus guaranteeing good electrical transmission performance of the resulting interconnect structure (400).