公开(公告)号：US20130233382A1

公开(公告)日：2013-09-12

申请号：US13872847

申请日：2013-04-29

Applicant: FUJIFILM CORPORATION

Inventor： Hiroyuki KOBAYASHI ,  Toshiaki FUKUNAGA ,  Naoki MURAKAMI

IPC: H01L31/0392

CPC classification number: H01L31/03923 ,  H01L31/022425 ,  Y02E10/541

Abstract: A photoelectric conversion device, which includes, on a substrate, a layered structure of a conductive layer formed by a transition metal element, a photoelectric conversion layer formed by a compound semiconductor containing a group Ib element, a group IIIb element and a group VIb element, and a transparent electrode, further includes a transition metal dichalcogenide thin film formed by the transition metal element and the group VIb element between the conductive layer and the photoelectric conversion layer. 80% or less of lot of crystallites forming the transition metal dichalcogenide thin film and occupying the surface of the conductive layer, on which the thin film is formed, have the c-axes thereof oriented substantially perpendicular to the surface of the conductive layer.

Abstract translation: 一种光电转换装置，在基板上包括由过渡金属元素形成的导电层的层叠结构，由含有Ib族元素，IIIb族元素和VIb族元素的化合物半导体形成的光电转换层 和透明电极，还包括由所述过渡金属元素形成的过渡金属二硫属元素化物薄膜和所述导电层与所述光电转换层之间的VIb族元素。 形成过渡金属二硫属元素化薄膜的微晶的80％以下，占据其上形成有薄膜的导电层的表面，其c轴取向为基本上垂直于导电层的表面。