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    PIEZOELECTRIC BODY FILM, PIEZOELECTRIC ELEMENT, AND METHOD FOR MANUFACTURING PIEZOELECTRIC ELEMENT
    3.
    发明申请
    PIEZOELECTRIC BODY FILM, PIEZOELECTRIC ELEMENT, AND METHOD FOR MANUFACTURING PIEZOELECTRIC ELEMENT 审中-公开

    公开(公告)号：US20200006622A1

    公开(公告)日：2020-01-02

    申请号：US16560325

    申请日：2019-09-04

    Applicant: FUJIFILM Corporation

    Inventor： Naoki MURAKAMI ,  Daigo SAWAKI

    IPC: H01L41/187 ,  H01L41/316 ,  C01G33/00 ,  C23C14/08 ,  C23C14/34

    Abstract: To provide a piezoelectric body film and a piezoelectric element from which an excellent piezoelectric characteristic can be obtained even in a high-temperature environment and a method for manufacturing a piezoelectric element.A piezoelectric body film of the present invention is a piezoelectric body film containing a perovskite-type oxide represented by Formula (1), in which a content q of Nb with respect to the number of all atoms in the perovskite-type oxide and a ratio r of a diffraction peak intensity from a (200) plane to a diffraction peak intensity from a (100) plane of the perovskite-type oxide, which is measured using an X-ray diffraction method, satisfy Formula (2), Formula (1) A1+δ[(ZryTi1-y)1-xNbx]O2, Formula (2) 0.35≤r/q

    ELECTROACOUSTIC TRANSDUCTION FILM AND MANUFACTURING METHOD THEREOF, ELECTROACOUSTIC TRANSDUCER, FLEXIBLE DISPLAY, VOCAL CORD MICROPHONE, SENSOR FOR MUSICAL INSTRUMENT
    5.
    发明申请
    ELECTROACOUSTIC TRANSDUCTION FILM AND MANUFACTURING METHOD THEREOF, ELECTROACOUSTIC TRANSDUCER, FLEXIBLE DISPLAY, VOCAL CORD MICROPHONE, SENSOR FOR MUSICAL INSTRUMENT 有权

    公开(公告)号：US20210392453A1

    公开(公告)日：2021-12-16

    申请号：US17460571

    申请日：2021-08-30

    Applicant: FUJIFILM Corporation

    Inventor： Naoki MURAKAMI ,  Tetsu MIYOSHI

    IPC: H04R31/00 ,  H01L41/257 ,  G10H3/14 ,  H04R17/02 ,  H04R17/00

    Abstract: Provided are an electroacoustic transduction film capable of reproducing a sound with a sufficient sound volume at a high conversion efficiency, a manufacturing method thereof, an electroacoustic transducer, a flexible display, a vocal cord microphone, and a sensor for a musical instrument. The electroacoustic transduction film includes: a polymer composite piezoelectric body in which piezoelectric body particles are dispersed in a viscoelastic matrix formed of a polymer material having viscoelasticity at a normal temperature; two thin film electrodes laminated on both surfaces of the polymer composite piezoelectric body; and two protective layers respectively laminated on the two thin film electrodes, in which an intensity ratio α1=(002) plane peak intensity/((002) plane peak intensity+(200) plane peak intensity) between a (002) plane peak intensity and a (200) plane peak intensity derived from the piezoelectric body particles in a case where the polymer composite piezoelectric body is evaluated by an X-ray diffraction method is more than or equal to 0.6 and less than 1.

    PHOTOELECTRIC CONVERSION DEVICE
    7.
    发明申请
    PHOTOELECTRIC CONVERSION DEVICE 审中-公开
    光电转换器件

    公开(公告)号：US20130233382A1

    公开(公告)日：2013-09-12

    申请号：US13872847

    申请日：2013-04-29

    Applicant: FUJIFILM CORPORATION

    Inventor： Hiroyuki KOBAYASHI ,  Toshiaki FUKUNAGA ,  Naoki MURAKAMI

    IPC: H01L31/0392

    CPC classification number: H01L31/03923 ,  H01L31/022425 ,  Y02E10/541

    Abstract: A photoelectric conversion device, which includes, on a substrate, a layered structure of a conductive layer formed by a transition metal element, a photoelectric conversion layer formed by a compound semiconductor containing a group Ib element, a group IIIb element and a group VIb element, and a transparent electrode, further includes a transition metal dichalcogenide thin film formed by the transition metal element and the group VIb element between the conductive layer and the photoelectric conversion layer. 80% or less of lot of crystallites forming the transition metal dichalcogenide thin film and occupying the surface of the conductive layer, on which the thin film is formed, have the c-axes thereof oriented substantially perpendicular to the surface of the conductive layer.

    Abstract translation: 一种光电转换装置，在基板上包括由过渡金属元素形成的导电层的层叠结构，由含有Ib族元素，IIIb族元素和VIb族元素的化合物半导体形成的光电转换层 和透明电极，还包括由所述过渡金属元素形成的过渡金属二硫属元素化物薄膜和所述导电层与所述光电转换层之间的VIb族元素。 形成过渡金属二硫属元素化薄膜的微晶的80％以下，占据其上形成有薄膜的导电层的表面，其c轴取向为基本上垂直于导电层的表面。

    FILM FORMING DEVICE AND METHOD OF FORMING PIEZOELECTRIC FILM
    8.
    发明申请
    FILM FORMING DEVICE AND METHOD OF FORMING PIEZOELECTRIC FILM 审中-公开

    公开(公告)号：US20200066494A1

    公开(公告)日：2020-02-27

    申请号：US16669514

    申请日：2019-10-31

    Applicant: FUJIFILM CORPORATION

    Inventor： Naoki MURAKAMI ,  Shuji TAKAHASHI

    IPC: H01J37/32 ,  C23C14/34 ,  H01J37/34 ,  H01L41/316

    Abstract: A film forming device includes an adhesion preventing mechanism in a film formation chamber, in which the adhesion preventing mechanism is configured with a plurality of adhesion preventing plates including at least a substrate edge adhesion preventing plate that is provided on an edge of a region on the substrate holding portion where the substrate is provided and a substrate outer peripheral region adhesion preventing plate that is disposed on an outer periphery of the substrate edge adhesion preventing plate to be spaced from the substrate edge adhesion preventing plate, a potential adjusting mechanism that is electrically connected to any one of the substrate edge adhesion preventing plate or the substrate outer peripheral region adhesion preventing plate is provided, and the adhesion preventing plate connected to the potential adjusting mechanism and an adhesion preventing plate disposed adjacent thereto are disposed at an interval of 0.5 mm to 3.0 mm.

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