PATTERN FORMING METHOD, METHOD FOR FORMING PATTERNED MASK, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE
    1.
    发明申请
    PATTERN FORMING METHOD, METHOD FOR FORMING PATTERNED MASK, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE 审中-公开
    图案形成方法,形成图案掩模的方法,制造电子设备的方法和电子设备

    公开(公告)号:US20160209749A1

    公开(公告)日:2016-07-21

    申请号:US15083389

    申请日:2016-03-29

    Abstract: There is provided a pattern forming method which includes (I) a step of forming a first film by applying an active light-sensitive or radiation-sensitive resin composition which contains (A) a resin having a repeating unit having a group that is decomposed by the action of an acid and generates a polar group and (B) a compound that generates an acid by irradiation with active light or radiation to a substrate, (II) a step of exposing the first film, (III) a step of forming a line-and-space pattern by developing the exposed first film, and (IV) a step of coating the line-and-space pattern with a second film, in which the top width of the line pattern of the line-and-space pattern formed in Step (III) is larger than the bottom width thereof.

    Abstract translation: 提供了一种图案形成方法,其包括(I)通过施加主动感光或辐射敏感性树脂组合物形成第一膜的步骤,所述树脂组合物含有(A)具有重复单元的树脂,所述重复单元具有被 酸的作用并产生极性基团,和(B)通过用活性光或辐射照射到基底产生酸的化合物,(II)暴露第一膜的步骤,(III)形成 通过显影曝光的第一薄膜来形成线间距图案,以及(IV)用第二薄膜涂覆线间距图案的步骤,其中线间距图案的线图案的顶部宽度 在步骤(III)中形成的底部宽度大于其底部宽度。

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