公开(公告)号：US10862036B2

公开(公告)日：2020-12-08

申请号：US15740265

申请日：2016-06-27

申请人： IMEC VZW ,  FUJIFILM CORPORATION

发明人： Tung Huei Ke ,  Pawel Malinowski ,  Atsushi Nakamura

IPC分类号： H01L51/00 ,  H01L51/05 ,  H01L51/42 ,  H01L51/56

摘要： At least one embodiment relates to a method for photolithographic patterning of an organic layer on a substrate. The method includes providing a water-soluble shielding layer over the organic layer. In addition, the method includes providing a photoresist layer on the water-soluble shielding layer. The method also includes photolithographic patterning of the photoresist layer to form a patterned photoresist layer. Further, the method includes etching the water-soluble shielding layer and the organic layer, using the patterned photoresist layer as a mask, to form a patterned water-soluble shielding layer and a patterned organic layer. Still further, the method includes removing the patterned water-soluble shielding layer. The method includes, before providing the water-soluble shielding layer, providing a hydrophobic protection layer having a hydrophobic upper surface on the organic layer.

公开(公告)号：US10096776B2

公开(公告)日：2018-10-09

申请号：US15053426

申请日：2016-02-25

申请人： FUJIFILM Corporation

发明人： Pawel Malinowski ,  Atsushi Nakamura ,  Yu Iwai

IPC分类号： H01L21/311 ,  H01L51/00 ,  H01L51/42 ,  H01L51/05 ,  H01L51/56

摘要： A method is provided for photolithographic patterning of an organic layer, comprising: providing a shielding layer on the organic layer; providing a photoresist layer on the shielding layer; illuminating the photoresist layer through a shadow mask; developing the photoresist layer, thereby forming a patterned photoresist layer; performing a first dry etching step using the patterned photoresist layer as a mask, thereby removing at least an upper portion of the photoresist layer and completely removing the shielding layer at locations not covered by the photoresist layer; performing a second dry etching step using the patterned shielding layer as a mask, thereby removing the organic layer at locations not covered by the shielding layer; and removing the shielding layer, wherein removing the shielding layer comprises exposing it to water. A method of the present disclosure may advantageously be used in a process for fabricating organic semiconductor based devices and circuits.