公开(公告)号：US10862036B2

公开(公告)日：2020-12-08

申请号：US15740265

申请日：2016-06-27

申请人： IMEC VZW ,  FUJIFILM CORPORATION

发明人： Tung Huei Ke ,  Pawel Malinowski ,  Atsushi Nakamura

IPC分类号： H01L51/00 ,  H01L51/05 ,  H01L51/42 ,  H01L51/56

摘要： At least one embodiment relates to a method for photolithographic patterning of an organic layer on a substrate. The method includes providing a water-soluble shielding layer over the organic layer. In addition, the method includes providing a photoresist layer on the water-soluble shielding layer. The method also includes photolithographic patterning of the photoresist layer to form a patterned photoresist layer. Further, the method includes etching the water-soluble shielding layer and the organic layer, using the patterned photoresist layer as a mask, to form a patterned water-soluble shielding layer and a patterned organic layer. Still further, the method includes removing the patterned water-soluble shielding layer. The method includes, before providing the water-soluble shielding layer, providing a hydrophobic protection layer having a hydrophobic upper surface on the organic layer.

公开(公告)号：US20220140276A1

公开(公告)日：2022-05-05

申请号：US17502708

申请日：2021-10-15

申请人： Imec vzw

发明人： Tung Huei Ke ,  David Cheyns ,  Pawel Malinowski

IPC分类号： H01L51/50 ,  H01L51/52 ,  H01L51/56

摘要： A semiconductor device comprises a substrate, a first hole-transporting layer over the substrate, a first electron-transporting layer on the first hole-transporting layer, and a second hole-transporting layer over the first electron-transporting layer. At least one of the first electron-transporting layer and the second hole-transporting layer has an organic component. The device is characterized by one of the following: a metal oxide layer present on the first electron-transporting layer, wherein a second electron-transporting layer is on the metal oxide layer, wherein the second hole-transporting layer is on the second electron-transporting layer, or the second hole transporting layer has a first p-doped hole-transporting surface present on the first electron-transporting, layer and a second p-doped hole-transporting surface facing away from the first p-doped hole-transporting surface, or the first electron-transporting layer is on a top surface and on sidewalls of the first hole-transporting layer.