公开(公告)号：US12123093B2

公开(公告)日：2024-10-22

申请号：US17674856

申请日：2022-02-18

Applicant: FUJIFILM CORPORATION

Inventor： Yoshihiko Mochizuki ,  Tomokazu Seki

IPC: H05H1/26 ,  C23C16/515

CPC classification number: C23C16/515 ,  H05H1/26

Abstract: Provided is a film forming device that deposits, on a substrate, a product generated by decomposing raw material gas by a plasma discharged from a discharge port of a double tube, the device including: an inner tube through which raw material gas containing a film-forming raw material flows and is guided to the discharge port on a downstream side; an outer tube that has the inner tube inserted thereinto and through which plasma-generating gas flows and a plasma generated by discharge is guided to the discharge port on the downstream side; a first electrode that is formed in an annular shape around the outer tube and grounded; and a second electrode that is formed in an annular shape around the outer tube and to which a voltage is applied. The second electrode is disposed on the downstream side with respect to the first electrode, and assuming that a length of the second electrode in an axial direction is L1 and a diameter of the outer tube is D1, a relationship of L1≥D1 is satisfied.

公开(公告)号：US10017854B2

公开(公告)日：2018-07-10

申请号：US15270001

申请日：2016-09-20

Applicant: FUJIFILM Corporation

Inventor： Seigo Nakamura ,  Yoshihiko Mochizuki ,  Atsushi Mukai

IPC: C23C16/40 ,  C23C16/505 ,  C23C16/34 ,  C23C16/30

CPC classification number: C23C16/401 ,  C23C16/308 ,  C23C16/345 ,  C23C16/505

Abstract: A gas barrier film includes a substrate film and an inorganic layer, in which the inorganic layer includes Si, N, H, and O, the inorganic layer includes a uniform region having a thickness of more than 5 nm at the center in a thickness direction, in the uniform region, a ratio of Si, N, H, and O is uniform and an O proportion is low, and either or both interface-contact regions of the inorganic layer are oxygen-containing regions in which the O proportion represented by the expression “O Proportion: (Number of O/Total Number of Si, N, and O)×100%” increases in a direction from the uniform region side to an interface and in which a variation of the O proportion per unit thickness is 2%/nm to 8%/nm.