公开(公告)号：US20150166561A1

公开(公告)日：2015-06-18

申请号：US14632741

申请日：2015-02-26

Applicant: FUJIFILM Corporation

Inventor： Tetsu KITAMURA ,  Koji TAKAKU ,  Wataru SOTOYAMA ,  Yuki HIRAI ,  Masaru KINOSHITA ,  Yuuta SHIGENOI

IPC: C07D493/04 ,  C07F7/08 ,  H01L51/00 ,  H01L51/05

CPC classification number: C07D493/04 ,  C07F7/0812 ,  C07F7/0838 ,  H01L51/0062 ,  H01L51/0065 ,  H01L51/0073 ,  H01L51/0545 ,  H01L51/0558

Abstract: An organic thin film transistor having a semiconductor active layer containing a compound represented by the formula (1) has a high carrier mobility and a small change in the threshold voltage after repeated operation. R1 to R10 represent H or a substituent, provided that at least one of R1 to R4 and R6 to R9 represents a substituent represented by -L-R, L represents a specific divalent linking group, and R represents an alkyl group, an oligooxyethylene group, an oligosiloxane group, or a trialkylsilyl group.

Abstract translation: 具有含有式（1）表示的化合物的半导体活性层的有机薄膜晶体管在重复操作之后具有高载流子迁移率和阈值电压的小变化。 R 1至R 10表示H或取代基，条件是R 1至R 4和R 6至R 9中的至少一个表示由-LR表示的取代基，L表示特定二价连接基团，R表示烷基，低聚氧乙烯基， 低聚硅氧烷基或三烷基甲硅烷基。