ORGANIC THIN FILM TRANSISTOR, ORGANIC SEMICONDUCTOR THIN FILM, AND ORGANIC SEMICONDUCTOR MATERIAL
    5.
    发明申请
    ORGANIC THIN FILM TRANSISTOR, ORGANIC SEMICONDUCTOR THIN FILM, AND ORGANIC SEMICONDUCTOR MATERIAL 审中-公开
    有机薄膜晶体管,有机半导体薄膜和有机半导体材料

    公开(公告)号:US20150221876A1

    公开(公告)日:2015-08-06

    申请号:US14685902

    申请日:2015-04-14

    Abstract: An organic thin film transistor containing a compound represented by the formula (1) in a semiconductor active layer has a high carrier mobility and a small fluctuation of the threshold voltage after repeated driving. R1 to R10 represent a hydrogen atom or a substituent, provided that at least one of R1 to R10 represents a substituent represented by the formula (W), or the aromatic hydrocarbon ring formed with any adjacent two of R1 to R10 has a substituent represented by the formula (W). * represents a position bonded to the benzobisbenzofuran skeleton, L represents a single bond or a divalent linking group, and R represents a substituted or unsubstituted acyclic alkyl group having 2 or more carbon atoms, an oligoethyleneoxy group having a repeating number of an ethyleneoxy unit of 2 or more, or an oligosiloxane group having 2 or more silicon atoms.

    Abstract translation: 在半导体有源层中含有式(1)表示的化合物的有机薄膜晶体管在反复驱动后具有高的载流子迁移率和阈值电压的小的波动。 R 1〜R 10表示氢原子或取代基,条件是R 1〜R 10中的至少一个表示由式(W)表示的取代基,或者与R 1〜R 10中任意相邻的2个所形成的芳香族烃环具有由 公式(W)。 *表示与苯并二苯并呋喃骨架结合的位置,L表示单键或二价连接基团,R表示取代或未取代的碳原子数2以上的无环烷基,具有重复数量的乙烯氧基单元的低聚亚乙基氧基 2个以上,或者具有2个以上硅原子的低聚硅氧烷基。

    ORGANIC THIN FILM TRANSISTOR, ORGANIC SEMICONDUCTOR THIN FILM, AND ORGANIC SEMICONDUCTOR MATERIAL
    9.
    发明申请
    ORGANIC THIN FILM TRANSISTOR, ORGANIC SEMICONDUCTOR THIN FILM, AND ORGANIC SEMICONDUCTOR MATERIAL 有权
    有机薄膜晶体管,有机半导体薄膜和有机半导体材料

    公开(公告)号:US20150218184A1

    公开(公告)日:2015-08-06

    申请号:US14685894

    申请日:2015-04-14

    Abstract: An organic thin film transistor containing a compound represented by the formula (1) in a semiconductor active layer has a high carrier mobility and a small fluctuation of the threshold voltage after repeated driving. R1 to R12 represent a hydrogen atom or a substituent, provided that at least one of R1 to R12 represents a substituent represented by the formula (W), or all of R1 to R12 represent a hydrogen atom. * represents a position bonded to the naphthobisbenzofuran skeleton. L represents a single bond, a divalent linking group, an oligoethyleneoxy group having a repeating number of an ethyleneoxy unit of 2 or more, or an oligosiloxane group having 2 or more silicon atoms.

    Abstract translation: 在半导体有源层中含有式(1)表示的化合物的有机薄膜晶体管在反复驱动后具有高的载流子迁移率和阈值电压的小的波动。 R 1〜R 12表示氢原子或取代基,条件是R 1至R 12中的至少一个表示由式(W)表示的取代基,或全部R 1至R 12表示氢原子。 *表示与萘并苯并呋喃骨架结合的位置。 L表示单键,二价连接基,乙氧基单元重复数为2以上的低聚亚乙基氧基或硅原子数为2以上的低聚硅氧烷。

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