Abstract:
A fingerprint recognition sensor having an excellent S/N ratio and capable of realizing thinning and an optical element including the fingerprint recognition sensor. The fingerprint recognition sensor includes a light-receiving element; and an optical element including a near infrared absorbing dichroic substance, in which a fingerprint reading surface is positioned on a side of the optical element opposite to the light-receiving element side. The optical element has an absorption axis with respect to near infrared light in an in-plane direction. When linearly polarized light of near infrared light orthogonal to the absorption axis is radiated from a normal direction of the optical element and from a direction inclined by 45° from the normal direction at an azimuthal angle orthogonal to the absorption axis, an absorbance during the radiation from the direction inclined by 45° from the normal direction is more than an absorbance during the radiation from the normal direction.
Abstract:
Provided are a composition that has excellent pigment dispersibility without affecting the color of a pigment in a visible range, a curable composition, a cured film, a near infrared cut filter, an infrared transmitting filter; a solid image pickup element, an infrared sensor, and a camera module. The composition includes: a pigment; a pigment derivative that includes a compound represented by Formula (1); and a solvent, in which R1 and R2 represent an aryl group or the like, R3 to R6 represent a cyano group, a heteroaryl group, or the like, R7 and R8 each independently represent —BR9R10 or the like, R9 and R10 each independently represent a hydrogen atom, a halogen atom, an alkyl group, an aryl group, a heteroaryl group, an alkoxy group, an aryloxy group, or a heteroaryloxy group, L represents a single bond or a linking group, X represents an acidic group or the like, m represents an integer of 1 to 10, and n represents an integer of 1 to 10.
Abstract:
To provide an infrared cut filter having a wide view angle and excellent infrared shieldability, a kit for manufacturing the infrared cut filter, and a solid-state imaging device. An infrared cut filter has: a copper-containing transparent layer 1. The copper-containing transparent layer 1 further contains an infrared absorbing agent, or an infrared absorbing agent-containing layer 2 is further provided.
Abstract:
An organic thin film transistor containing a compound represented by the following formula in a semiconductor active layer has a high carrier mobility and a small change in the threshold voltage after repeated driving. Z represents a substituent having a length of 3.7 Å or less, and at least one of R1 to R8 represents -L-R wherein L represents alkylene, etc., and R represents alkyl, etc.
Abstract:
Provided are a composition capable of forming an optically anisotropic film exhibiting a negative Nz factor, an optically anisotropic film, a circularly polarizing plate, a display device, a compound, and a method for producing a compound. The composition includes a non-coloring lyotropic liquid crystal compound represented by Formula (X) (Rx1-(Lx1-Lx2-Rx2)n)a−(Mb+)c.
Abstract:
Provided is a composition that is capable of forming a polarizer layer having an excellent degree of alignment and excellent adhesiveness to another layer in a case of being applied to a laminate, a polarizer layer, a laminate, and an image display device. The composition of the present invention is a composition including at least a polymer liquid crystal compound, a dichroic material, and a low-molecular-weight liquid crystal compound, in which the polymer liquid crystal compound is a copolymer having a repeating unit (1) represented by Formula (1), the low-molecular-weight liquid crystal compound is a compound represented by Formula (LC), and relationships represented by Expressions |log P(SP1)−log P(SPL1)|≤2.0 (11), |log P(MG1)−log P(SP1)|≥4.5 (12), and |log P(ML)−log P(SPL1)|≥4.0 (13) are satisfied.
Abstract:
To provide a near-infrared absorption composition which contains a squarylium compound having excellent solvent solubility, a cured film which uses the near-infrared absorption composition, a near-infrared cut filter, a solid-state imaging device, an infrared sensor, and a compound. A near-infrared absorption composition includes a compound represented by the following Formula (1) and a resin. R1 and R2 each independently represent “—S1-L1-T1” or the like, R3 and R4 each independently represent a hydrogen atom or an alkyl group, X1 and X2 each independently represent an oxygen atom or —N(R5)—, R5 represents a hydrogen atom or the like, Y1 to Y4 each independently represent a substituent, p and s each independently represent an integer of 0 to 3, and q and r each independently represent an integer of 0 to 2; and S1 represents an arylene group or the like, L1 represents an alkylene group or the like, and T1 represents an alkyl group or the like.
Abstract:
An object is to provide an organic semiconductor element having excellent carrier mobility and heat resistance of a semiconductor active layer, an organic semiconductor composition for obtaining this element, an organic semiconductor film, and a method of manufacturing an organic semiconductor element in which the composition is used, and another object is to provide a compound and an oligomer or a polymer that are suitably used in the organic semiconductor element, the organic semiconductor composition, the organic semiconductor film, and the method of manufacturing an organic semiconductor element.The organic semiconductor element of the present invention includes a compound represented by Formula 1 below in a semiconductor active layer. In Formula 1, X represents a chalcogen atom, p and q each independently represent an integer of 0 to 2, and R1 and R2 each independently represent a halogen atom or a group represented by Formula W below.
Abstract:
Provided are an organic transistor containing a compound represented by the following formula, results in high carrier mobility when being used in a semiconductor active layer of the organic transistor, and exhibits high solubility in an organic solvent, in a semiconductor active layer. X is O, S, or Se; p and q are 0 to 2; R1 to R10, Ra, and Rb are hydrogen, halogen, or -L-R; one of R1 to R10, Ra, and Rb is -L-R; L is a specific divalent linking group; and R is an alkyl group, a cyano group, etc.
Abstract:
An organic film transistor containing a compound, which is composed of n repeating units represented by Formula (1-1), (1-2), (101-1), or (101-2), in a semiconductor active layer is an organic film transistor using a compound having high carrier mobility and high solubility in an organic solvent. (Cy represents a benzene ring, a naphthalene ring, or an anthracene ring; each of R11 to R14 and R15 to R18 independently represents a hydrogen atom or a substituent; each of Ar1 to Ar4 independently represents a heteroarylene group or an arylene group; each of V1 and V2 represents a divalent linking group; m represents an integer of 0 to 6; when m is equal to or greater than 2, two or more groups represented by V1 may be the same as or different from each other; n is equal to or greater than 2; p represents an integer of 0 to 6; and when p is equal to or greater than 2, two or more groups represented by V2 may be the same as or different from each other.)